[B-6-2] Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs

Arifin Tamsir, Masumi Saitoh, Gen Tsutsui, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Capacitance Due to the Charge Layer Thickness in Nanoscale Capacitors

Kenji Natori, Motoyuki Oniki, Takashi Kurusu, Tomo Shimizu (1.University of Tsukuba, Institute of Applied Physics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4L] P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50 nm Channel Length

Krishna K. Bhuwalka, Mathias Born, Markus Schindler, Matthias Schmidt, Torsten Sulima, Ignaz Eisele (1.Institute of Physics, Universitat der Bundeswehr)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Advanced split-CV technique for accurate extraction of inversion layer mobility in short channel MOSFETs

H. Irie, A. Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Improved oxidation-induced Ge condensation technique by using H+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

Masanori Ikishima, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao (1.Department of Electronics, Kyushu University, 2.Analyses & Evaluation Center, Fukuryo Semicon Engineering Corporation, 3.SUMCO, 4.SUMCO)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique

Shu Nakaharai, Tsutomu Tezuka, Eiji Toyoda, Norio Hirashita, Yoshihiko Moriyama, Tatsuro Maeda, Toshinori Numata, Naoharu Sugiyama, Shin-ichi Takagi (1.MIRAI(ASET), 2.Toshiba Ceramics, 3.MIRAI(AIST), 4.The Univ. of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] Explanation of Negative Bias Temperature Instability Mechanism in p-MOSFETs by Reaction-Diffusion Model

S. Mahapatra, S. Sharma, P. Bharath Kumar, D. Varghese, D. Saha (1.Department of Electrical Engineering, IIT)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Influence of bulk bias on NBTI of pMOSFETs with ultrathin SiON gate dielectric

Shiyang Zhu, Anri Nakajima, Takuo Ohashi, Hideharu Miyake (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Elpida Memory, Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain

Chia-Yu Lu, Horng-Chih Lin, Yi-Feng Chang, Tiao-Yuan Huang (1.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs

Jin-Woo Han, Choong-Ho Lee, Donggun Park, Yang-Kyu Choi (1.Dept. of EECS, Korea Advanced Institute of Science and Technology, 2.Device Research Team, Semiconductor R&D Division, Samsung Electronics Co.)

2005 International Conference on Solid State Devices and Materials |PDF Download

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