[C-1-4] A Novel Short-time Characterization Method of SIV Properties by Using the Empirical Equation

M. TAKAHASHI, T. HARADA, N. MITSU, K. TSUKAMOTO, S. OGAWA, T. UEDA (1.Matsushita Semi-Conductor Engineering Co. Ltd., 2.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co. Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Electrical Characteristics of Porous Zeolite Interlayer Dielectrics

Takenobu YOSHINO, Guoqing GUAN, Nobuhiro HATA, Nobutoshi FUJII, Takamaro KIKKAWA (1.MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), and, 2.ASRC, AIST, 3.MIRAI, Association of Super-Advanced Electronics Technology (ASET), 4.Research Center for Nanodevices and Systems (RCNS), Hiroshima University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Innovative Al Damascene Process for Nanoscale Interconnects

Kyung In Choi, Sung Ho Han, Sera Yun, Dae-Yong Kim, Jong Won Hong, Sang Woo Lee, Byung Hee Kim, Sung-Tae Kim, U In Chung, Joo Tae Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Microstructural evolution of MIM capacitor prepared by ALD system at elevated temperature

C. H. Lin, C. C. Wang, P. J. Tzeng, C. S. Liang, W. M. Lo, H. Y. Li, L. S. Lee, S. C. Lo, Y. W. Chou, M-J Tsai (1.Electronics Research and Service Organization, 2.Material Research Laboratory Industrial Technology Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super Chip Integration

Takafumi Fukushima, Yusuke Yamada, Hirokazu Kikuchi, Mitsumasa Koyanagi (1.Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Characteristics of Silicon-on-Low-K Insulator (SOLK) MOSFET with Metal Back-Gate

Y. Yamada, Hyuckjae Oh, T. Sakaguchi, T. Fukushima, M. Koyanagi (1.Department of Bioengineering and Robotics, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Integration Challenges for Carbon Nanotubes

Franz Kreupl, Maik Liebau, Robert Seidel, Andrew P. Graham, Georg S. Duesberg, Eugen Unger (1.Infineon Technologies, Corporate Research, 2.R. S. is now with AMD Dresden, Germany)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Nano-meter order Structures of Porous Low-k Films and their Impacts on Cu/Low-k Processes

Miyako Shimada, Junichi Shimanuki, Yuji Otsuka, Takahiro Harada, Yasuhide Inoue, Shinichi Ogawa (1.Semiconductor Leading Edge Technologies, Inc., 2.NISSAN ARC, Ltd., 3.Toray Research Center, Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Comparison of Pore Shape Models for Small Angle X-ray Scattering of a Disordered Porous Silica Low-k Film

Naoko Kunishige, Nobuhiro Hata, Nobutoshi Fujii, Takamaro Kikkawa (1.Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Science and Technology (AIST), 2.Millenium Research for Advanced Information Technology (MIRAI)-ASRC, AIST, 3.MIRAI-Association of Super-Advanced Electronics Technologies (ASET), 4.Research Center for Nanodevices and Systems, Hiroshima-University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] Adsorption in-situ Spectroscopic Ellipsometry Analysis of Disordered Porous Silica Low-k Films

Xianying Li, Nobutoshi Fujii, Nobuhiro Hata, Takamaro Kikkawa (1.ASRC, AIST, 2.MIRAI-ASET, 3.MIRAI-ASRC, AIST, 4.RCNS, Hiroshima U.)

2005 International Conference on Solid State Devices and Materials |PDF Download