[I-5-4] Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate

Yang Liu, Takashi Egawa, Hao Jiang, Hiroyasu Ishikawa (1.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-5-5] Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P2S5/(NH4)2Sx Surface Treatments

Liann-Bie Chang, Ming-Jer Jeng, Chia-Hwa Chang, Li-Zen Hsieh, Ping-Yu Kuei (1.Department of Electronic Engineering, Chang-Gung University, 2.Department of Electronic Engineering, St. John’s & St. Mary’s Institute of Technology, 3.Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-6-1] Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs

Jin-Ping Ao, Ryota Kan, Toshio Hirao, Hideki Okada, Masaya Okada, Daigo Kikuta, Shinobu Onoda, Hisayoshi Itoh, Yasuo Ohno (1.Dept. of Electrical and Electronic Engineering, The University of Tokushima, 2.Japan Atomic Energy Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-6-2] High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs

Kazuhide Kumakura, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-6-3] Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors

Toshiki Makimoto, Takatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation, 2.Shonan Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-6-4] p-InGaN/n-GaN Vertical Conducting Diodes on n+-SiC Substrate for High Power Electronic Device Applications

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-6-5L] C-band AIGaN/GaN HEMTs with 170W Output Power

Yoshiharu Takadal, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (1.Advanced Electron Devices Laboratory, Corporate R＆D Center, Toshiba Corporation, 2.Microwave Solid-state Engineering Dept., Komukai Operations, ToshibaCorporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-7-1] Simulation of AlGaN/GaN Heterostructure Field Effect Transistors

N. Braga, R. Mickevicius, W. Fichtner, R. Gaska, M. S. Shur, G. Simin, M. Asif Khan (1.Synopsys, Inc., 2.Sensor Electronic Technology Inc., 3.ECSE Department, Rensselaer Polytechnic Institute, 4.Dept. of Electrical Engineering, U. of South Carolina)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-7-2] Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)

Yuwei Liu, Hong Wang, Rong Zeng (1.Microelectronics Centre School of Electrical and Electronic Engineering Nanyang Technological University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-7-3] Low-Field Electron Mobility Models for Bulk GaN and AlGaN/GaN 2DEGs

Frank Schwierz (1.Fachgebiet Festkorperelektronik, Technische Universitat Ilmenau)

2005 International Conference on Solid State Devices and Materials |PDF Download