[B-1-5] Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs

Tsutomu Tezuka, Shu Nakaharai, Yoshihiko Moriyama, Norio Hirashita, Naoharu Sugiyama, Akihito Tanabe, Koji Usuda, Shin-ichi Takagi (1.MIRAI-ASET, 2.MIRAI-AIST, 3.The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

Shinichi Takagi, Koji Takeda, Satoshi Sugahara, Toshinori Numata (1.Graduate School of Frontier Science, 2.School of Engineering, The Univ. of Tokyo, 3.MIRAI(ASET))

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Direct Measurement of Circuit Performance Enhancement under Mechanically Applied Uniaxial Strain

T. Miyashita, T. Tanaka (1.Fujitsu Laboratories Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs

Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer

Yukio Nakabayashi, Junji Koga, Takamitsu Ishihara, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5] Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen Annealing

Yunik Son, Md.Shahriar Rahman, Kiju Im, Man Chang, Hokyong Park, Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-2-6L] Fully-depleted ultra narrow (-10 nm) body Gate-All-Around CMOS transistors

Navab Singh, A. Agarwal, L. K. Bera, W.W. Fang, R. Kumar, G. Q. Lo, N. Balasubramanian, D. L. Kwong (1.Institute of Microelectronics, 2.National University of Singapore.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices

Cheng Weitao, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Si Substrate Orientation Induced Worse Hot Carrier Degradation in Novel (110)/<111’> Oriented Devices

Sinclair Chiang, M.F. Lu, Y.C. Liu, S. Huang-Lu, W.T. Shiau, S.C. Chien (1.Central Research and Development Division, UMC)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime

Tomohisa Mizuno, Shinichi Takagi (1.MIRAI-AIST, 2.Kanagawa University, 3.The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

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