[A-8-3] Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlOx MOSFETs with Nanometer TaN Dots at the Top Interface

Hideaki Fujiwara, Masaru Kadoshima, Hiroyuki Ota, Hiroyuki Takaba, Nobuyuki Mise, Hideki Satake, Toshihide Nabatame, Akira Toriumi (1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.The Univ. of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs

Shinsuke Sakashita, Kenichi Mori, Kazuki Tanaka, Masaharu Mizutani, Masao Inoue, Shinichi Yamanari, Jiro Yugami, Hiroshi Miyatake, Masahiro Yoneda (1.Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation, 2.Process Engineering Section, Wafer Process Engineering Dept., Renesas Semiconductor Engineering Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric

Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Masato Koyama, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Thermally Robust Y2O3/Ge MOS Capacitors

Hideyuki Nomura, Koji Kita, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO2 interfaces

T. Nakaoka, K. Shiraishi, Y. Akasaka, T. Chikyow, K. Yamada, Y. Nara (1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 2.National Institute for Materials Science, 3.Semiconductor Leading Edge Technology Inc., 4.Nanotechnology Research Laboratories, Waseda University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-9-4] Theoretical analysis of the Fermi level pinning in HfO2/Si system induced by the interface defect states

Minoru Ikeda, Georg Kresse, Toshihide Nabatame, Akira Toriumi (1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET), 2.Institut fur Materialphysik, Univeisitat Wien, 3.MIRAI-AIST, 4.University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] 45nm Conventional Bulk and “Bulk+” Architectures for Low-Cost GP/LP Applications

F. Boeuf, S. Monfray, A. Pouydebasque, M. Muller, F. Payet, C. Ortolland, T. Skotnicki (1.STMicroelectronics, 2.Philips Semiconductor)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] A 90nm Hybrid SOI CMOS Technology Integrating PDSOI and Bulk Devices for Bulk-designed MPU Performance Booster

S. Miyake, T. Suzuki, T. Watanabe, O. Fujita, N. Harada, K. Doumeki, T. Fukai, T. Syo, T. Moriya, S. Haruta, Y. Takeshita, M. Ikeda, K. Imai (1.Advanced Device Development Division, 2.Product Engineering Division, 3.Process Technology Division and, 4.Custom LSI Division NEC Electronics Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Combining Embedded and Overlayer Compressive Stressors in Advanced SOI CMOS Technologies

A. Wei, T. Kammler, J. Hontschel, H. Bierstedt, J.-P. Biethan, A. Hellmich, K. Hempel, J. Klais, G. Koerner, M. Lenski, T. Mantei, A. Neu, R. Otterbach, C. Reichel, B. Trui, G. Burbach, T. Feudel, P. Javorka, C. Schwan, N. Kepler, H.-J. Engelmann, C. Ziemer-Popp, O. Herzog, D. Greenlaw, M. Raab, R. Stephan, M. Horstmann, P.-O. Hansson, A. Samoilov, E. Sanchez, O. Luckner, S. Weiher-Telford (1.AMD Saxony LLC & Co., 2.Applied Materials, Inc., 3.Buchenstr.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Effect of Process Induced Strain in 35 nm FDSOI Devices with Ultra-Thin Silicon Channels

C. Gallon, C. Fenouillet-Beranger, S. Denorme, F. Boeuf, V Fiori, N. Loubet, T. Kormann, M. Broekaart, P. Gouraud, F. Leverd, G. Imbert, C. Chaton, C. Laviron, L. Gabette, F. Vigilant, P. Garnier, H. Bernard, A. Tarnowka, A. Vandooren, R. Pantel, F. Pionnier, S. Jullian, S. Cristoloveanu, T. Skotnicki (1.STMicroelectronics, 2.Philips, 3.Freescale Semiconductors, 4.CEA-LETI, 5.IMEP)

2005 International Conference on Solid State Devices and Materials |PDF Download