[H-10-1] Highly Reliable Ring Type Contact Scheme for High Density PRAM

C.W. Jeong, S.J. Ahn, Y.N. Hwang, Y.J. Song, J.H. Oh, S.Y. Lee, S.H. Lee, K.C. Ryoo, J.H. Park, J.M. Shin, Jae-Hyun Park, F. Yeung, W.C. Jeong, Y.T. Kim, K.H. Koh, G.T. Jeong, H.S. Jeong, K.N. Kim (1.Advanced Technology Development, CAE Team, Semiconductor R&D Div., Samsung Electronics Co., Ltd)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-10-2] Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (SbxSe1-x)

Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Young-Sam Park, Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Matthias Wuttig (1.Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), 2.Department of Ceramic Engineering, Yonsei University, 3.Physikalisches Institut der RWTH Aachen)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-10-3] Temperature Dependence of Phase Change Random Access Memory Cell

X. S. Miao, L. P. Shi, R. Zhao, P. K. Tan, K.G. Lim, J.M. Li, T. C. Chong (1.Data Storage Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-1] Physics of AlGaN/GaN Electronic and Photonic Devices

M. S. Shur, R. Gaska (1.ECSE Department, Rensselaer Polytechnic Institute, 2.Sensor Electronic Technology Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-2] High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N2O Annealing

Tsunenobu Kimoto, Hiroaki Kawano, Masato Noborio, Jun Suda (1.Dept. of Electronic Sci. & Eng., Kyoto University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-3] Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications

Takeshi Kawasaki, Ken Nakata, Seiji Yaegassi (1.EUDYNA DEVICES INC.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-4] Enhanced Breakdown Characteristic of AlGaN/GaN HEMTs Using a Gate/Drain Double Field-Plate Structure

Seunghun Kim, Kyounghoon Yang (1.Division of Electrical Engineering, Dept. of Electrical Engineering and Computer Science (EECS), Korea Advanced Institute of Science and Technology (KAIST))

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-5] A New ICP-CVD SiO2 Passivation for High Voltage Switching AlGaN/GaN HFETs

Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, Min-Koo Han (1.School of Electrical Engineering #50, Seoul National University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-6] High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages

Shuichi Yagi, Masaki Inada, Yuki Yamamoto, Guanxi Piao, Yoshiki Yano, Kazunori Hikosaka, Mitsuaki Shimizu, Hajime Okumura (1.National Institute of Advanced Industrial Science and Technology, 2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-1-7] Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation

Seung-Chul Lee, Min-Woo Ha, Jin-Cherl Her, Ji-Yong Lim, Kwang-Seok Seo, Min-Koo Han (1.School of Electrical Engineering (#50), Seoul National University)

2005 International Conference on Solid State Devices and Materials |PDF Download