The Japan Society of Applied Physics

533件中(401 - 410)

[P3-3] DC Hot Carrier Reliability at Elevated Temperatures for nMOSFETs Using 0.13μm Technology

J. C. Lin、S. Y. Chen、H. W. Chen、Z. W. Jhou、H. C. Lin、S. Chou、J. Ko、T. F. Lei、H. S. Haung (1.Special Technology Division, United Microelectronics Corporation、2.Institute of Mechatronics Engineering, National Taipei University of Technology、3.Department of Electronics Engineering, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-4] The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs

Chieh-Ming Lai、Chien-Ting Lin、Yean-Kuen Fang、Wen-Kuan Yeh、Jia-Wei Syu、W. T. Shiau (1.Institute of Microelectronics, National Cheng Kung University、2.Department of Electrical Engineering, National University of Kaohsiung、3.United Microelectronics Corporation, Central R&D Division)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-9] Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors

Yiming Li、Shao-Ming Yu、Ching-Feng Hsiao (1.Department of Communication Engineering, National Chiao Tung University、2.Microelectronics and Information Systems Research Center, National Chiao Tung University、3.Department of Computer and Information Science, National Chiao Tung University、4.Institute of Statistics, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

533件中(401 - 410)