[P-1-11] Electrical Stress-Induced Degradation of HfAlO and HfO₂ Films of Equal EOT

P. Samanta^1,2、Y. J. Lee³、C. L. Cheng⁴、M. Chan² (1.Vidyasagar College for Women, India、2.Hong Kong Univ. of Sci. and Tech., China、3.National Nano Device Labs.、4.National Formosa Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-12] Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack

J. Chen¹、T. Sekiguchi¹、N. Fukata¹、M. Takase¹、T. Chikyo¹、R. Hasunuma²、K. Yamabe²、M. Sato³、Y. Nara³、K. Yamada⁴ (1.NIMS、2.Univ. of Tsukuba、3.Selete、4.Waseda Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-13] Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and its Impacts on Plasma-Induced Damage Analysis

A. Matsuda¹、Y. Nakakubo¹、Y. Ueda¹、H. Ohta¹、K. Eriguchi¹、K. Ono¹ (1.Kyoto Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-14] Optimization of the First Reaction in ALD and its Impact to Electrical Film Quality of High-k/Si Direct-contact Gate Stacks

Y. Morita¹、S. Migita¹、H. Ota¹ (1.MIRAI-NIRC, AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-15] Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs

K. T. Lee¹、C. Y. Kang²、S. H. Hong¹、H. S. Choi¹、G. B. Choi¹、J. C. Kim¹、S. H. Song¹、R. H. Baek¹、M. S. Park¹、H. C. Sagong¹、S. H. Sakong³、S. W. Jung³、H. K. Park²、H. S. Hwang⁴、B. H. Lee²、Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech., Korea、2.SEMATECH, USA、3.NCNT、4.GIST, Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-16] Low Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor in High Pressure

T. Futatsuki^1,2、T. Oe¹、H. Aoki²、N. Komatsu²、C. Kimura²、T. Sugino² (1.Organo Corp.、2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-17] Thermal Stability of High-κ Dielectrics - A Nanocharacterization Perspective

Y. C. Ong¹、D. S. Ang¹、S. J. O'Shea²、K. L. Pey¹、T. Kawanago⁴、S. J. Wang²、C. H. Tung³、K. Kakushima⁴、H. Iwai⁴ (1.Nanyang Tech. Univ.、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore、4.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-18] Negative Bias Temperature Instability (NBTI) of pMOSFETs with Novel Hf_xMo_yN_z Metal Gate Electrodes

H. K. Peng¹、C. S. Lai¹、K. M. Fan¹、S. J. Lin² (1.Chang Gung Univ.、2.Nanya Tech. Corp., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-19] Investigation of Schottky Diodes on Germanium using Mercury Probe

M. Koike¹、M. Koyama¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-20L] UV Raman Study of Cleavage Effects on Stress Distribution in Si STI Structure

T. Tada¹、V. Poborchii¹、T. Kanayama¹ (1.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード