[D-2-04] Self-organization of Ge Layers on Si Surfaces at High Temperatures

^○A. Shklyaev^1,2 (1.Inst. of Semiconductor Physics of SB RAS(Russia), 2.Novosibirsk State Univ.(Russia))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:40 PM - 4:55 PM |PDF Download

[D-2-05] Investigation of Effects of Inner Stress with Sn Incorporation on Energy Band of Si_1–_xSn _x Using Density Functional Theory and Photoelectron Spectroscopy

Y. Nagae¹,^○M. Kurosawa^1,2,3,4, M. Araidai^1,2,3, O. Nakatsuka¹, K. Shiraishi^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Inst. for Adv. Res., Nagoya Univ.,(Japan), 3.IMaSS, Nagoya Univ.(Japan), 4.JST-PRESTO(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:55 PM - 5:10 PM |PDF Download

[D-2-06(Late News)] Withdrawn

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 5:10 PM - 5:25 PM

[D-4-01(Invited)] RF-MBE Growth of GaInN Ternary Alloys Using in-situ Monitoring Techniques

^○T. Yamaguchi¹, T. Sasaki², M. Takahasi², T. Araki³, T. Onuma¹, T. Honda¹, Y. Nanishi³ (1.Kogakuin Univ.(Japan), 2.QST(Japan), 3.Ritsumeikan Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 1:30 PM - 2:00 PM |PDF Download

[D-4-02] First Principle and Thermodynamic Analysis of MOVPE Growth of GaN and AlN

^○K. Sekiguchi¹, H. Shirakawa¹, K. Chokawa¹, Y. Yamamoto¹, M. Araidai^2,1, Y. Kangawa³, K. Kakimoto³, K. Shiraishi^2,1 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.IMaSS, Nagoya Univ.(Japan), 3.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:00 PM - 2:15 PM |PDF Download

[D-4-03] Phase Transition from Zinc Blende to Wurtzite and Green Emission of AlInP Grown on (10-10) GaN by Crystal Structure Transfer Epitaxy

^○T. Fukui¹, Y. Hiraya¹, F. Ishizaka¹, K. Tomioka¹ (1.Hokkaido Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:15 PM - 2:30 PM |PDF Download

[D-4-04] Enhanced Photoluminescence from InAs Quantum Dots Monolithically Grown on Si (100) using InGaAs/GaAs dislocation filter layers

^○J. Kwoen¹, K. Watanabe¹, Y. Arakawa¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:30 PM - 2:45 PM |PDF Download

[D-5-01(Invited)] Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices

^○S. Miyazaki¹, D. Takeuchi¹, M. Ikeda¹, K. Makihara¹ (1.Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 9:30 AM - 10:00 AM |PDF Download

[D-5-02] Low Temperature (250℃) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange

^○R. Yoshimine¹, K. Toko¹, T. Suemasu¹ (1.Univ. of Tsukuba(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:00 AM - 10:15 AM |PDF Download

[D-5-03] Low-Temperature Gold-Induced Lateral Crystallization of Sn-Doped Ge on Insulator for Flexible Electronics

^○T. Sakai¹, T. Sadoh¹, R. Matsumura¹, M. Miyao¹ (1.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:15 AM - 10:30 AM |PDF Download