2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (421 - 430)

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[PS-4-07] Enhanced Retention Characteristics in Double Gate Tunnel FET based DRAM

^○N. Navlakha¹, J. T. Lin², A. Kranti¹ (1.Indian Inst. of Tech. Indore(India), 2.National Sun Yat-Sen Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-4-08] Facile Aqueous Synthesis of CeO₂ Octahedrons for Memristor Application

^○H. Du¹, B. Qu¹, T. Wan¹, J. Chen², D. Chu¹ (1.UNSW(Australia), 2.IMR, Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-4-09(Late News)] Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid

^○K. Kinoshita¹, A. Harada¹, H. Yamaoka¹, A. Sakaguchi¹, K. Watanabe¹, S. Kishida¹, Y. Fukaya¹, T. Nokami¹, T. Itoh¹ (1.Tottori Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-4-10(Late News)] One-Transistor Ferroelectric Versatile Memory with Multi-Level Operation

Y. C. Chiu¹,^○Y. W. Hung¹, C. C. Fan¹, C. Liu¹, W. W. Lai¹, Y. R. Chen¹, P. W. Chen², C. H. Cheng², C. Y. Chang¹, W. C. Chou¹ (1.NCTU(Taiwan), 2.National Taiwan Normal Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-5-01] Novel Integrated Voltage Regulators with High-Side NMOS Power Switch and Dedicated Bootstrap Driver Using Vertical MOSFET for Efficiency Enhancement

^○K. Itoh^1,2,3, M. Muraguchi^1,2,3, T. Endoh^1,2,3 (1.Graduate School of Eng., Tohoku Univ.(Japan), 2.CIES, Tohoku Univ.(Japan), 3.JST-ACCEL(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:36 AM - 11:39 AM |PDF Download

[PS-5-02] Temperature Sensor Using Cascoded Diode-connected MOSFETs Operating in Sub-threshold Region

R. L. Wang¹, J. L. Shi¹, Y. F. Hao¹,^○C. S. Tsai¹, L. W. Wang¹, K. B. Lee¹, Y. T. Chuang², H. H. Liao², H. H. Tsai², Y. Z. Juang² (1.National Kaohsiung Normal Univ.(Taiwan), 2.National Applied Research Labs.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:39 AM - 11:42 AM |PDF Download

[PS-5-03] Multi-Ring MOSFETs for Mobility Enhancement and Parasitic Resistances Reduction in RF and Analog Applications

Y. Y. Lin¹,^○J. C. Guo¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:42 AM - 11:45 AM |PDF Download

[PS-5-04] Noise Analysis of a Serial Multiple Sampling in Back-Illuminated CMOS Image Sensor

^○H. Wakabayashi¹, K. Yamaguchi¹, Y. Yamagata² (1.Sony Semiconductor Solutions Corp.(Japan), 2.Sony LSI Design Inc.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:45 AM - 11:48 AM |PDF Download

[PS-5-05] A Gain Cell Array with Retention Increment Design for Bit-Area Efficient On-Chip Memory Applications

^○S. Manisankar¹, H. Kim¹, Y. Chung¹ (1.Kyungpook National Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:48 AM - 11:51 AM |PDF Download

[PS-5-06] An All-Digital Duty-Cycle Corrector with Synchronous and High Accuracy Output for DDR-SDRAM Application

Y. L. Lo¹,^○C. W. Tsai², C. C. Chang¹, H. Y. Liu¹, W. B. Yang³, K. H. Cheng² (1.National Kaohsiung Normal Univ.(Taiwan), 2.National Central Univ.(Taiwan), 3.Tamkang Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:51 AM - 11:54 AM |PDF Download

734 results (421 - 430)

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