[J-1-03] A Wide Dynamic Range CMOS Image Sensor with Two Different Sensitivity Storage Diodes

^○M. Lee¹, M. Seo¹, D. Ueno¹, T. Takasawa¹, J. Shin², K. Yasutomi¹, K. Kagawa¹, S. Kawahito¹ (1.Shizuoka Univ.(Japan), 2.Kyungpook National Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:30 PM - 2:50 PM |PDF Download

[J-1-04(Late News)] Physically Unclonable Function using Initial Waveform of Ring Oscillators on 65nm CMOS Technology

^○T. Tanamoto¹, S. Takaya¹, N. Sakamoto¹, H. Kasho¹, S. Yasuda¹, T. Marukame¹, S. Fujita¹, Y. Mitani¹ (1.Toshiba Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:50 PM - 3:05 PM |PDF Download

[J-1-05(Late News)] High Frequency VCO and Divider for Fifth-Generation Mobile Communications Technology

^○C. Yeh¹, M. Yen¹, H. Chen¹ (1.National Taiwan Univ. of Sci. and Tech.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:05 PM - 3:20 PM |PDF Download

[J-2-01(Invited)] Hurdles and Progress towards Device Applications of Graphene and Layered Materials

^○D. Jena¹ (1.Cornell Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:40 PM - 4:10 PM |PDF Download

[J-2-02] The Physical Origin of Interface Defects and Its Influence on MOSCAP with Magnetron Sputtered MoS₂ and HfO₂ High-k Gate Dielectric

^○P. Xia¹, S. Wang², D. Chi², C. Li³, Z. He³, X. Liu⁴, K. W. Ang¹ (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore), 3.South Univ. of Sci. and Tech. of China(China), 4.Shenzhen Univ.(China))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:10 PM - 4:25 PM |PDF Download

[J-2-03] Using Self-Assembled Monolayers for Selective Metal Removing and Ultrathin Gate Dielectrics in MoS₂ Field-Effect Transistors

^○W. Du¹, T. Kawanago¹, S. Oda¹ (1.Tokyo Tech(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:25 PM - 4:40 PM |PDF Download

[J-2-04] Graphene with Different Oxygenated Levels in Transparent Resistive Switching Memory Applications

C. C. Lin¹, S. W. Tsai¹,^○Z. -L. Zeng¹ (1.National Dong Hwa Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:40 PM - 4:55 PM |PDF Download

[J-2-05] Band Offset and Band Engineering in Transition Metal Dichalcogenides

^○J. Robertson¹, Y. Guo¹ (1.Cambridge Univ.(UK))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:55 PM - 5:10 PM |PDF Download

[J-2-06] Intercalation of Li atom from Solvated State to Interlayer of Graphite with Oxidized Edges as Li-Ion-Battery Anode: First-Principles Calculations

^○T. Kawai^1,2, S. Okada², M. Otani³ (1.NEC Corp.(Japan), 2.Univ. of Tsukuba(Japan), 3.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 5:10 PM - 5:25 PM |PDF Download

[J-2-07(Late News)] Improvement of I_on/I_off for Bilayer Graphene by Encapsulation with h-BN

^○T. Uwanno¹, T. Taniguchi², K. Watanabe², K. Nagashio^1,3 (1.Univ. of Tokyo(Japan), 2.NIMS(Japan), 3.JST-PRESTO(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 5:25 PM - 5:40 PM |PDF Download