2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (401 - 410)

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[PS-3-10] Analysis and Modeling of Zero-V_TH Native Devices with Industry Standard BSIM6 Model

^○C. Gupta¹, H. Agarwal¹, Y. K. Lin², S. Khandelwal², A. Ito³, C. Hu², Y. S. Chauhan¹ (1.Indian Inst. of Tech. Kanpur(India), 2.Univ. of California, Berkeley(USA), 3.Broadcom(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-3-11] Low Frequency Noise of Accumulation-Mode n- and p-MOSFETs fabricated on (110) Crystallographic Silicon-Oriented Wafers

^○P. Gaubert¹, A. Teramoto¹, S. Sugawa¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-3-12] Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors

^○M. Higashino¹, H. Aoki¹, N. Tsukiji¹, M. Kazumi¹, T. Totsuka¹, S. Shibuya¹, K. Kurihara¹, H. Kobayashi¹ (1.Gunma Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-3-13(Late News)] Multilayer TiNi Alloys as Gate Metal for InGaAs MOS Devices

H. Do¹, Q. Luc¹, M. Huu Ha¹, S. Huynh¹, C. Chang¹, J. Lin¹,^○K. Yang¹, C. FanChang¹, Y. Lin¹, E. Chang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-4-01] Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device with Ge Buried Channel

^○C. Cheng¹, K. S. Chang-Liao¹, H. Fang¹, C. Huang¹ (1.National Tsing Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-4-02] Modified Switching Mechanism for GeSbTe based Chalcogenide Superlattice Phase Change Memories

X. Yu¹,^○J. Robertson¹ (1.Cambridge Univ.(UK))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

[PS-4-03] Ab-initio modeling of Conductive channel in Cu – Al₂O₃ conductive bridge RRAM

J. Dawson¹,^○J. Robertson¹ (1.Cambridge Univ.(UK))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-4-04] Elliptical Pillar Duplication by Self-Aligned Double Patterning Technology

^○A. J. Hong¹, J. Shim¹, M. Lee¹, K. Lee¹, K. Jung¹, J. Hong¹, H. Seong¹, K. Kim¹, S. Jeon¹, Y. Kim¹, J. Park¹, H. Hong¹, K. Lee¹, E. Jung¹ (1.Samsung Electronics Co. Ltd(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-4-05] Compact Model of FeFET Memory Based on Multi-Domain Landau-Khalatnikov Theory

^○H. Asai¹, K. Fukuda¹, J. Hattori¹, H. Koike¹, N. Miyata¹, M. Takahashi¹, S. Sakai¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-4-06] SiCOH Low-k material based RRAM for BEOL Process Compatible Nonvolatile Memory Application

^○L. Zheng¹, Y. Dai¹, L. Yu¹, L. Chen¹, Q. Sun¹, S. Ding¹, W. Zhang¹ (1.Fudan Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

734 results (401 - 410)

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