2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (681 - 690)

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[PS-14-09] Oxidation Mechanism of 4H-SiC in Dilute N₂O Ambient

T. H. Wu¹,^○B. Y. Tsui¹, Y. H. Tseng¹, C. T. Yeng², C. C. Hung², C. Y. Lee² (1.NCTU(Taiwan), 2.Hestia-Power Inc.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:24 AM - 11:27 AM |PDF Download

[PS-14-10] Enhanced Thermal Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ Catalyst

^○L. Li¹, A. Ikeda¹, T. Asano¹ (1.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:27 AM - 11:30 AM |PDF Download

[PS-14-11] Characterization of Electrical Field Enhancement at the Edge of Schottky Electrode on Diamond

^○H. Umezawa^1,2, H. Gima³, K. Driche^2,4, Y. Kato¹, F. Donatini², E. Gheeraert², T. Yoshitake³, Y. Mokuno¹ (1.AIST(Japan), 2.Inst. Néel / CNRS(France), 3.Kyushu Univ.(Japan), 4.Univ. of Tsukuba(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:30 AM - 11:33 AM |PDF Download

[PS-14-12] Defect Reduction in Homoepitaxial Diamond Films for High Breakdown Voltage Schottky Diodes

^○T. Teraji¹, H. Umezawa² (1.NIMS(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:33 AM - 11:36 AM |PDF Download

[PS-14-13] Withdrawn

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:36 AM - 11:39 AM

[PS-14-14(Late News)] Impact of Optical Phonon Scattering on Inversion Channel Mobility in 4-H-SiC Trenched MOSFETs

^○K. Kutsuki^1,2, S. Kawaji¹, Y. Watanabe¹, T. Onishi², H. Fujiwara², K. Yamamoto³, T. Yamamoto³ (1.Toyota Central R&D Labs. Inc.(Japan), 2.TOYOTA MOTOR Corp.(Japan), 3.DENSO Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:39 AM - 11:42 AM |PDF Download

[PS-14-15(Late News)] Strong Impact of Slight Misalignment of the Trench Direction from [11-20] on Deep Trench Filling Epitaxy for SiC Super-junction (SJ) Devices

^○R. Kosugi¹, S. Ji¹, K. Mochizuki¹, H. Kouketsu¹, Y. Kawada¹, H. Fujisawa¹, K. Kojima¹, S. Yoshida¹, Y. Yonezawa¹, H. Okumura¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:42 AM - 11:45 AM |PDF Download

[PS-14-16(Late News)] Effect of N Bonding Structure in AlON on Leakage Current of 4H-SiC MOS Capacitor

^○W. Takeuchi¹, K. Yamamoto², T. Mimura², M. Sakashita¹, T. Kanemura², O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ.(Japan), 2.DENSO Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:45 AM - 11:48 AM |PDF Download

[PS-14-17(Late News)] Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on Operation

^○J. Hasegawa¹, L. Pace², L. V. Phung², M. Hatano¹, D. Planson² (1.Tokyo Tech(Japan), 2.Lab. Ampère(France))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:48 AM - 11:51 AM |PDF Download

[PS-14-18(Late News)] 4H-SiC Bipolar SRAM Cell for High-temperature Applications

H. Elgabra¹,^○A. Siddiqui¹, S. Singh¹ (1.Khalifa Univ. of Science Tech. and Research(United Arab Emirates))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:51 AM - 11:54 AM |PDF Download

734 results (681 - 690)

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