2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (461 - 470)

[PS-6-07] Effects of Different Fe-doped GaN Buffer in AlGaN/GaN HEMTs on Si Substrate

^○S. C. Chen¹, J. W. Chiu¹, B. H. Li¹, H. C. Chiu¹, R. Xuan², C. W. Hu² (1.Chang Gung Univ.(Taiwan), 2.Episil-Precision Inc(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-08] Leakage Current Reduction of Gated Ohmic Anode AlGaN/GaN Schottky Barrier Dioide by Applying Anode Edge Termination

^○R. Ki¹, I. Hwang¹, H. Cha², K. Seo¹ (1.Seoul National Univ.(Korea), 2.Hongik Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-09] The Influence of AlGaN/GaN Schottky Barrier Diode (SBD) with SiH₄ Doping in Barrier Layer

^○J. W. Chiu¹, S. C. Chen¹, B. H. Li¹, H. C. Chiu¹, R. Xuan², C. W. Hu² (1.Chang Gung Univ.(Taiwan), 2.Episil-Precision Inc(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-10] ZnO and ZnON Film-Profile Engineered TFTs for BEOL High-Voltage Operations

^○M. Wu¹, H. Lin¹, P. Li¹, T. Huang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-11] High-Performance Thin-Film Transistors with ZnO/Al₂O₃ Superlattice Channel by Atomic Layer Deposition

^○G. D. Cui¹, D. D. Han¹, J. C. Dong¹, Y. Y. Cong¹, X. M. Zhang¹, H. J. Li¹, W. Yu¹, S. D. Zhang¹, X. Zhang¹, Y. Wang¹ (1.Peking Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-12] Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered Zr_xSi_1-xO₂ Gate Dielectrics

P. Y. Liu¹, S. J. Wang¹, C. H. Hung¹, C. H. Wu², N. S. Wu¹,^○H. P. Yan¹, T. H. Lin¹ (1.National Cheng Kung Univ.(Taiwan), 2.Chung Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-13] Study of Fabrication and Current-voltage Characteristics of MoS₂/WSe₂ Heterojunction Diode

^○Y. H. Jiang¹ (1.National Taiwan Univ. of Sci. and Tech.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-6-14(Late News)] Hydrazine (N₂H₄)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface

^○H. Jung¹, M. Shin¹, H. Ahn¹, J. Do¹, S. Chang¹, K. Cho¹, B. Min¹, H. Kim¹, H. Yoon¹, J. Lim¹ (1.Electronics and Telecommunications Res. Inst.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-7-01] [No-show]Low Threshold Current AlGaAsSb/InGaASb/GaSb Quantum Well Laser Operating at Wavelength of 2-μm

X. Li¹,^○H. Wang¹, Z. L. Qiao¹, C. Y. Liu¹ (1.Nanyang Technological Univ.(Singapore))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM

[PS-7-02] Experimental Observation of Direct Bandgap Photoluminescence from Tensile-strained Ge Nanodots Embedded within SiO₂ Matrix

^○M. H. Kuo¹, S. K. Chou¹, W. T. Lai², Y. W. Pan², S. D. Lin², T. George², P. W. Li^1,2 (1.National Central Univ.(Taiwan), 2.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

734 results (461 - 470)