[A-7-03(Late News)] A Study on the Correlation between SRAM Power-up State and Transistor Variation

^○K. Takeuchi¹, T. Mizutani¹, T. Saraya¹, H. Shinohara², M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo(Japan), 2.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 2:40 PM - 2:55 PM |PDF Download

[A-7-04(Late News)] Parallel Programmable Non-volatile Memory Using Normal SRAM Cells

^○T. Mizutani¹, K. Takeuchi¹, T. Saraya¹, H. Shinohara², M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo(Japan), 2.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 2:55 PM - 3:10 PM |PDF Download

[A-7-05(Late News)] The Experimental Observation of Soft-Error Enhanced NBTI Degradation in Trigate FinFETs for the near-Cosmic Exploration of Drones

E. Hsieh¹, C. Wu¹,^○S. Chung¹, R. Huang², C. Tsai², T. Yew² (1.NCTU(Taiwan), 2.UMC(Taiwan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 3:10 PM - 3:25 PM |PDF Download

[A-7-06(Late News)] Time-Domain Study on Reproducibility of Laser-Based Soft-Error Simulation

^○H. Itsuji^1,2, D. Kobayashi^1,2, N. Lourenco³, K. Hirose^1,2 (1.Univ. of Tokyo(Japan), 2.ISAS/JAXA(Japan), 3.GTRI(USA))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 3:25 PM - 3:40 PM |PDF Download

[B-1-01(Invited)] Operation Mechanism and Novel Functions of Oxide-Based Atomic Switches

^○T. Tsuruoka¹, T. Hasegawa², K. Terabe¹, M. Aono¹ (1.NIMS(Japan), 2.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[B-1-02] Gate Contact RRAM in Nano-scaled FinFET Logic Technologies

^○M. Y. Hsu¹, Y. D. Chih², C. J. Lin¹, Y. C. King¹ (1.National Tsing Hua Univ.(Taiwan), 2.TSMC(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:20 PM |PDF Download

[B-1-03] A Sidewall Electrode TiOx/TiOxNy ReRAM with Excellent Memory Window Control and Reliability Using Plasma Oxidation and a Novel Degradation-detecting Writing Algorithm

^○D. Lee¹, J. Wu¹, M. Lee¹, E. Lai¹, W. Khwa¹, Y. Lin¹, W. Chen¹, K. Chiang¹, T. Wang¹, S. Horng², J. Gong², H. Lung¹, K. Hsieh¹, C. Lu¹ (1.Macronix International Co., Ltd.(Taiwan), 2.National Tsing Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:20 PM - 2:40 PM |PDF Download

[B-1-04] Switching Mechanism in Resistive Random Access Memory by First-Principles Calculation Using Practical Model Based on Experimental Results

^○T. Moriyama¹, T. Yamasaki², S. Hida¹, T. Ohno^2,3, S. Kishida^1,4, K. Kinoshita^1,4 (1.Tottori Univ.(Japan), 2.NIMS(Japan), 3.Univ. of Tokyo(Japan), 4.Tottori Integrated Frontier Res. Center(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:40 PM - 3:00 PM |PDF Download

[B-1-05] Statistical Analysis of the Correlations between Cell Performance and its Initial States in CRRAM Cells

^○Y. Kao¹, W. Hsieh¹, C. Chen², Y. King¹, C. Lin¹ (1.National Tsing Hua Univ.(Taiwan), 2.TSMC(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:00 PM - 3:20 PM |PDF Download

[B-2-01(Invited)] Perpendicular STT-MRAM Macro Embedded into 40nm CMOS Logic Platform

^○Y. Lu¹ (1.Hikstor Technology Co., Ltd.(China))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:25 PM - 3:55 PM |PDF Download