2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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[O-5-04(Late News)] Nearly Pinning-free Ohmic Contact at Bismuth/n-Silicon Interface

^○S. Matsumoto¹, T. Nishimura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:30 AM - 10:45 AM |PDF Download

[O-6-01(Invited)] Ultra-thin Dielectric Insertions for Contact Resistivity Lowering in Advanced CMOS: Promise and Challenges

^○L. Hutin¹, J. Borrel^1,2, Y. Morand², F. Nemouchi¹, M. Vinet¹ (1.CEA-LETI(France), 2.STMicroelectronics(France))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:15 AM - 11:45 AM |PDF Download

[O-6-02] Control of Fermi Level Pinning at Metal/Ge Interface Based on a Reconsideration of Metal-induced Gap States Model

^○T. Nishimura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:45 AM - 12:05 PM |PDF Download

[O-6-03] Record-high On/Off Current Ratio in Ge Planar n⁺/p Junctions with Gate Stack Passivation Scheme

^○T. C. Liu¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:05 PM - 12:25 PM |PDF Download

[O-6-04(Late News)] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer

^○H. Okamoto¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:25 PM - 12:40 PM |PDF Download

[PS] Poster Session

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM

[PS-1-01] Structural and Electrical Characterization of Epitaxial Ge Thin Film on Si (001) Formed by Sputtering

^○S. Otsuka¹, T. Mori¹, Y. Morita¹, N. Uchida¹, Y. Liu¹, S. O’uchi¹, H. Fuketa¹, S. Migita¹, M. Masahara¹, T. Matsukawa¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-1-02] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

^○S. Ike^1,2, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

[PS-1-03] Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers

^○K. Furukawa¹, A. Teramoto¹, R. Kuroda¹, T. Suwa¹, K. Hashimoto¹, S. Sugawa¹, D. Suzuki², Y. Chiba², K. Ishii², A. Shimizu², K. Hasebe² (1.Tohoku Univ.(Japan), 2.Tokyo Electron Tohoku Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-1-04] Impact of Si_xGe₁₋_x₋_ySn_y Interlayer on Reduction in Schottky Barrier Height of Metal/n-Ge Contact

^○A. Suzuki^1,2, S. Toda¹, O. Nakatsuka¹, M. Sakashita¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

734 results (321 - 330)

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