2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (351 - 360)

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[PS-1-11] Microstructure Analysis of Nanosized Advanced Materials through the ACOM-TEM Technique

^○A. Valery^1,2, L. Gaben¹, M. Grégoire¹, Y. Le-Friec¹, F. Lorut¹, L. Clément¹ (1.STMicroelectronics(France), 2.Univ. Grenoble Alpes, CNRS, SIMAP(France))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-12(Late News)] Carrier and Heat Transport Properties of Poly-crystalline GeSn on Insulator Substrates

^○N. Uchida¹, J. Hattori¹, K. Fukuda¹, T. Maeda¹, R. Lieten^2,3, Y. Ohishi⁴, R. Takase⁵, M. Ishimaru⁵, J. Locquet³ (1.AIST(Japan), 2.IMEC(Belgium), 3.KU Leuven(Belgium), 4.Osaka univ.(Japan), 5.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-13(Late News)] Heavy Sb-doping for Poly-GeSn on Insulator Using Pulsed Laser Annealing in Water

^○K. Takahashi^1,2, M. Kurosawa^1,3,4, H. Ikenoue⁵, M. Sakashita¹, O. Nakatsuka¹, S. Zaima^1,3 (1.Grad. Sch. of Engineering, Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan), 4.JST-PRESTO(Japan), 5.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-14(Late News)] Schottky-barrier-height Reduction for n-Si and n-Ge by Insertion of Tungsten Silicide and Germanide Films Chemically Synthesized using Gas-phase Reactions

^○N. Okada^1,2, N. Uchida², T. Kanayama² (1.JST-PRESTO(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-2-01] A Novel Noise Analysis Method with Multi-physics Simulation for Capacitive CMOS-MEMS Inertial Sensor System

^○T. Konishi¹, D. Yamane², H. Ito², S. Dosho², N. Ishihara², H. Toshiyoshi³, K. Masu², K. Machida¹ (1.NTT Advanced Tech. Corp.(Japan), 2.Tokyo Tech(Japan), 3.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-2-02] Development of Single Crystalline 4H-SiC MEMS for Harsh Environments

^○F. Zhao¹, C. Fang Huang² (1.Washington State Univ.(USA), 2.National Tsing Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

[PS-2-03] Design and Characterization of the Disk-shaped Piezoresistive Pressure Sensor

^○A. Y. Chang¹, S. H. Tseng¹, H. H. Tsai¹, Y. Z. Juang¹ (1.National Applied Research Labs.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-2-04] Reductive Kinetic Study of Oxidized Cu Surface by Catalyzed Formic Acid Vapor

P. W. Chou¹,^○J. M. Song¹, M. Akaike², M. Fujino², T. Suga², J. Y. Lin³ (1.National Chung Hsing Univ.(Taiwan), 2.Univ. of Tokyo(Japan), 3.Indus. Tech. Res. Inst.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-2-05] High Efficiency MOSFET Bridge Rectifier for AlN MEMS Cantilever Vibration Energy Harvester

^○R. Takei¹, H. Okada¹, D. Noda², R. Ohta², T. Takeshita¹, T. Itoh³, T. Kobayashi¹ (1.AIST(Japan), 2.Micromachine Center(Japan), 3.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-2-06] Poly-InSb nMOSFETs for Monolithic 3DIC

^○M. Takahashi^1,2, T. Irisawa², W. H. Chang², J. Tominaga², S. Fujikawa¹, H. Fujishiro¹, T. Maeda^1,2 (1.Tokyo Univ. of Science(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

734 results (351 - 360)

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