2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (291 - 300)

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[N-3-02] Terahertz Detector Using High Electron Mobility Transistor with Reduced Series Resistance for High Responsivity

S. Shibuya¹, Y. Isobe¹,^○S. Suzuki¹ (1.Tokyo Tech(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:00 AM - 10:15 AM |PDF Download

[N-3-03] Photo-induced Current in n-AlGaAs/GaAs Heterojunction Field-effect Transistor Driven by Local Illumination at Edge Regions of Schottky Metal Gate

^○T. Kawazu¹, T. Noda¹, Y. Sakuma¹ (1.NIMS(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:15 AM - 10:30 AM |PDF Download

[N-3-04(Late News)] Breaking the GaN Material Limits with Nanoscale Vertical Polarisation Super Junction Structures – A Simulation Analysis

^○V. Unni¹, S. N. E. Madathil¹ (1.Univ. of Sheffield(UK))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:30 AM - 10:45 AM |PDF Download

[N-4-01(Invited)] Reliability challenges for GaN-based FETs

^○M. Kuball¹, M. Uren¹, J. Pomeroy¹, S. Karboyan¹, I. Chatterjee¹, D. Liu¹, J. Anaya¹, T. Brazzini¹ (1.Univ. of Bristol(UK))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 1:30 PM - 2:00 PM |PDF Download

[N-4-02] Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al₂O₃/AlGaN/GaN Structures

^○Z. Yatabe¹, J. T. Asubar², Y. Nakamura¹, T. Hashizume³ (1.Kumamoto Univ.(Japan), 2.Univ. of Fukui(Japan), 3.Hokkaido Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:00 PM - 2:15 PM |PDF Download

[N-4-03] Band Offset of Al₂O₃/SiO₂ Nano-laminate on GaN Evaluated by Hard X-ray Photoelectron Spectroscopy

^○K. Ito¹, D. Kikuta¹, T. Narita¹, K. Kataoka¹, N. Isomura¹, K. Kitazumi¹, T. Mori¹ (1.Toyota Central R&D Labs. Inc.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:15 PM - 2:30 PM |PDF Download

[N-4-04(Late News)] Direct Carrier Number Measurement Method to Evaluate Current Collapse of GaN HEMT device

^○K. Oasa¹, A. Yoshioka¹, Y. Saito¹, T. Kikuchi², T. Ohguro¹, T. Hamamoto¹, T. Sugiyama¹ (1.TOSHIBA Corp. Storage & Electronic Dev. Solutions Co.(Japan), 2.TOSHIBA Corp. Manufac. Eng. Center(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:30 PM - 2:45 PM |PDF Download

[N-5-01(Invited)] Planer Diamond P-channel MOSFETs with Breakdown Voltage V_B > 1.8kV and High Drain Current Density by 2DHG

^○H. Kawarada¹, Y. Kitabayashi¹, M. Syamsul N. S. B. ¹, M. Shibata¹, D. Matsumura¹, T. Kudo¹, A. Hiraiwa¹ (1.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 9:30 AM - 10:00 AM |PDF Download

[N-5-02] Dynamic Properties of Diamond High Voltage PIN Diode

^○A. Traore¹, A. Nakajima¹, T. Makino^1,2, D. Kuwabara^1,2,3, H. Kato^1,2, M. Ogura^1,2, D. Takeuchi^1,2, S. Yamasaki^1,2,3 (1.AIST(Japan), 2.JST-CREST(Japan), 3.Univ. of Tsukuba(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:00 AM - 10:15 AM |PDF Download

[N-5-03(Invited)] Single Crystal β-Ga₂O₃ Substrates

^○A. Kuramata^1,2, K. Koshi^1,2, S. Watanabe¹, Y. Yamaoka^1,3, T. Masui^1,2, S. Yamakoshi^1,2 (1.Tamura Corp.(Japan), 2.Novel Crystal Technology, Inc(Japan), 3.Koha Co., Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:15 AM - 10:45 AM |PDF Download

734 results (291 - 300)

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