2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (121 - 130)

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[E-3-01(Invited)] Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics

^○K. Kita¹, H. Hirai¹, H. Kajifusa¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 9:30 AM - 10:00 AM |PDF Download

[E-3-02] Oxidation Induced Stress in the SiO₂/SiC System

^○X. Li¹, A. Ermakov¹, V. Amarasinghe¹, T. Gustafsson¹, L. C. Feldman¹, E. Garfunkel¹ (1.Rutgers Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:00 AM - 10:15 AM |PDF Download

[E-3-03] First-principles Study on Carrier Scattering Property at 4H-SiC(0001)/SiO₂

^○T. Ono^1,2, S. Iwase¹, C. J. Kirkham¹ (1.Univ. of Tsukuba(Japan), 2.JST-PRESTO(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:15 AM - 10:30 AM |PDF Download

[E-3-04] An Extraction Method of Interface State Density near Conduction Band Edge at SiC MOS Interfaces

^○S. Takagi^1,2, M. Takenaka^1,2 (1.Univ. of Tokyo(Japan), 2.JST-CREST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:30 AM - 10:45 AM |PDF Download

[E-4-01(Invited)] Advanced 1.2 kV Class SiC MOSFETs Fabricated on 150 mm wafers in a High-volume CMOS Fab

^○S. Banerjee¹, K. Matocha¹, K. Chatty¹ (1.Monolith Semiconductor Inc.(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 1:30 PM - 2:00 PM |PDF Download

[E-4-02] Analysis of 4H-SiC IGBT Switching in the Presence of Interface Traps using Miller Plateau Characteristics

^○D. Navarro¹, A. Tone², H. Kikuchihara², Y. Morikawa¹, M. Miura-Mattausch² (1.Silvaco Japan(Japan), 2.Hiroshima Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:00 PM - 2:15 PM |PDF Download

[E-4-03] Gate Threshold Voltage Control of C-H Diamond MOSFETs

^○T. Kudo¹, Y. Kitabayashi¹, D. Matsumura¹, Y. Hayashi¹, M. Inaba¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:15 PM - 2:30 PM |PDF Download

[E-4-04] H-terminated Diamond Field Effect Transistor with Ferroelectric Gate Insulator

R. Karaya¹, Y. Mori¹, H. Furuichi¹, I. Baba¹, T. Nakajima², N. Tokuda¹,^○T. Kawae¹ (1.Kanazawa Univ.(Japan), 2.Tokyo Univ. of Science(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:30 PM - 2:45 PM |PDF Download

[E-6-01] Current-Injection Two-Color Lasing in a Wafer-Bonded Coupled Multilayer Cavity with InGaAs Multiple Quantum Wells

^○H. Ota¹, X. M. Lu¹, N. Kumagai¹, T. Kitada¹, T. Isu¹ (1.Tokushima Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:15 AM - 11:30 AM |PDF Download

[E-6-02] Hydrothermal Growth of n-ZnO Films on Patterned p-GaN Epilayer and Its Application on Heterojunction Light Emitting Diodes

R. M. Ko¹, ○C. Y. Chen¹, C. H. Wu¹, Y. R. Lin², H. M. Lo³, S. J. Wang¹ (1.National Cheng Kung Univ.(Taiwan), 2.Ming Chi Univ. of Tech.(Taiwan), 3.Aceplux Optotech Inc.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:30 AM - 11:45 AM |PDF Download

734 results (121 - 130)

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