2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (41 - 50)

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[B-2-02] Study about the Ion Beam Etching (IBE) Process for the High Density Spintronic Devices and its Damage Recovery by the Oxygen Showering Post-treatment (OSP)

^○J. Jeong^1,2, T. Endoh^1,3,4 (1.Tohoku Univ.(Japan), 2.Samsung Electronics Co. Ltd(Korea), 3.CIES, Tohoku Univ.(Japan), 4.JST-ACCEL(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:55 PM - 4:15 PM |PDF Download

[B-2-03] Highly Reliable MTJ-Based Nonvolatile Logic-in-Memory LSI with Content-Aware Write Error Masking Scheme

^○M. Natsui¹, A. Tamakoshi¹, T. Endoh¹, H. Ohno¹, T. Hanyu¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:15 PM - 4:35 PM |PDF Download

[B-2-04] A Soft/Write-Error Resilient CMOS/MTJ Nonvolatile Flip-Flop Based on Majority-Decision Shared Writing

^○N. Onizawa¹, T. Hanyu¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:35 PM - 4:55 PM |PDF Download

[B-2-05] Long-Term Reliable Physically Unclonable Function using Oxide Tunnel Barrier Breakdown on 2T-2MTJ Based Embedded-STT-MRAM

^○S. Takaya¹, T. Tanamoto¹, H. Noguchi¹, K. Ikegami¹, K. Abe¹, S. Fujita¹ (1.Toshiba Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:55 PM - 5:15 PM |PDF Download

[B-2-06] A Compact and Ultra-Low-Power STT-MRAM-Based Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching

^○Y. Ma¹, S. Miura¹, H. Honjo¹, S. Ikeda¹, T. Hanyu¹, H. Ohno¹, T. Endoh¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 5:15 PM - 5:35 PM |PDF Download

[B-3-01] A Physics-Based Compact Model of Resistive Switching for Bi-layered TaO_X-RRAM

^○Y. D. Zhao¹, P. Huang¹, J. J. Hu¹, X. Y. Liu¹, J. F. Kang¹ (1.Peking Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 9:10 AM - 9:30 AM |PDF Download

[B-3-02] Switching Operation of Double-Layer Conductive Bridging RAM Investigated using In-situ Transmission Electron Microscopy

^○M. Arita¹, S. Hirata¹, A. Takahashi¹, T. Hiroi¹, M. Jo¹, A. Tsurumaki-Fukuchi¹, Y. Takahashi¹ (1.Hokkaido Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 9:30 AM - 9:50 AM |PDF Download

[B-3-03] Analysis of \"hot spot\" in Conducting-bridge Random Access Memory (CBRAM) by Impedance Method

^○A. Fukushima¹, K. Kinoshita¹ (1.Tottori Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 9:50 AM - 10:10 AM |PDF Download

[B-3-04] Bipolar and Unipolar Switching Characteristics of GeTe-Sb₂Te₃ Superlattice iPCM

X. Wang¹,^○N. Miyata¹, K. V. Mitrofanov¹, Y. Saito¹, P. J. Fons¹, A. Kolobov¹, J. Tominaga¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:10 AM - 10:30 AM |PDF Download

[B-3-05] Multi-level Operation of a High-speed, Low Power Topological Switching Random-access Memory (TRAM) Based on a Ge Deficient Ge_xTe/Sb₂Te₃ Superlattice

^○H. Shirakawa¹, M. Takato¹, M. Araidai^1,2, T. Ohyanagi³, N. Takaura³, K. Shiraishi¹ (1.Nagoya Univ.(Japan), 2.JST-CREST(Japan), 3.Hitachi, Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:30 AM - 10:50 AM |PDF Download

734 results (41 - 50)

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