2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (511 - 520)

[PS-8-05] Influence of Post Annealing Treatment on Fixed Charge State and Chemical Bonding State of Sr-silicate Film

^○S. Taniwaki¹, M. Umano¹, H. Yoshida¹, K. Arafune¹, S. Satoh¹, Y. Hotta¹ (1.Univ. of Hyogo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-06] Formation of AlO_x/GeO_x/Ge Gate Stack Structure by Thermal Oxidation

^○A. Heya¹, N. Matsuo¹ (1.Univ. of Hyogo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-07] Fabricating High Quality YIG Thin Film by Mist CVD under Open-Air Atmospheric Pressure

^○L. Liu¹, Y. Suwa¹, Y. Nakasone¹, M. Nishi¹, E. K. C. Pradeep¹, T. Kawaharamura¹ (1.Kochi Univ. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-08] Bismuth Doping Effect on Structural and Photocatalytic Activity of Bi-doped TiO₂ Nanoparticles

^○Y. -H. Chang¹, K. -C. Hsiao¹, T. -H. Lin¹, P. -Y. Wu¹, Y. -K. Tseng¹, T. -F. Lin¹, M. -C. Wu^1,2 (1.Chang Gung Univ.(Taiwan), 2.Chang Gung Memorial Hospital(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-09] The Properties of the In_xGa_1-xSb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique

^○S. Huynh¹, Q. Luc¹, M. Ha¹, H. Do¹, H. Yu¹, E. Chang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-10] The Growth of In_xGa_1-xSb Epilayer on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using an Interfacial Misfit Dislocation GaSb Buffer Layer

S. Huynh¹, M. Ha¹, Q. Luc¹, H. Do¹, C. Hsiao², C. Chang¹,^○J. Lin¹, H. Yu¹, E. Chang¹ (1.NCTU(Taiwan), 2.National Cheng Kung Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-11(Late News)] Preparation of IGZO Thin Layer by a Low-temperature Non-vacuum Technique

^○E. K. C. Pradeep¹, G. T. Dang¹, M. Ohtani¹, K. Kobiro¹, T. Kawaharamura¹ (1.Kochi Univ. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-8-12(Late News)] Crystallographic Polarity Effect of ZnO on Thin Film Growth of Pentacene

T. Nakamura^1,2,^○T. Nagata¹, R. Hayakawa¹, T. Yoshimura², S. Oh¹, N. Hiroshiba^3,1, T. Chikyow¹, N. Fujimura², Y. Wakayama¹ (1.NIMS(Japan), 2.Osaka Prefecture Univ.(Japan), 3.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-9-01] Wide-field Imaging of Magnetic Field with Nitrogen-vacancy Centers in Diamond by Frequency Modulation of Microwaves

Y. Miura¹, S. Kashiwaya²,^○S. Nomura¹ (1.Univ. of Tsukuba(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-9-02] Low-noise and Wide-bandwidth Current Readout at Low Temperatures Using a Superconducting-quantum-interference-device Amplifier

^○M. Tran^1,2, Y. Okazaki¹, S. Nakamura¹, M. Ortolano², N. Kaneko¹ (1.AIST(Japan), 2.Politecnico di Torino(Italy))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

734 results (511 - 520)