2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (281 - 290)

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[N-1-04] Fabrication and Characterization of InAs/High-k/Low-k Structures

^○T. Ui¹, R. Mori¹, S. P. Le¹, Y. Oshima¹, T. Suzuki¹ (1.JAIST(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:30 PM - 2:45 PM |PDF Download

[N-1-05] Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In_0.53Ga_0.47As MOSFET and FinFET Applications

^○Q. H. Luc¹, C. C. Chang¹, P. C. Chang¹, H. B. Do¹, J. W. Lin¹, K. S. Yang¹, C. C. F. Chang¹, M. T. H. Ha¹, S. H. Huynh¹, Y. C. Lin¹, E. Y. Chang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:45 PM - 3:00 PM |PDF Download

[N-1-06] Demonstration of a Common Gate-Stack Process for p-Ge and n-InGaAs CMOS Integration

P. Lee¹, C. Chen¹, S. Chang², G. Luo²,^○J. Chyi^1,3 (1.National Central Univ.(Taiwan), 2.National Nano Device Labs.(Taiwan), 3.Academia Sinica(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:00 PM - 3:15 PM |PDF Download

[N-2-01(Invited)] GaN-based Polarized Semiconductor Devices for Future Power Switching Systems

^○H. Ishida¹, R. Kajitani¹, Y. Kinoshita¹, H. Umeda¹, S. Ujita¹, M. Ogawa¹, K. Tanaka¹, S. Tamura¹, M. Ishida¹, T. Ueda¹ (1.Panasonic Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:40 PM - 4:10 PM |PDF Download

[N-2-02(Invited)] SiC Power Devices: Technologies, Products and Applications

^○S. Rascuna¹, M. Saggio¹, S. Coffa¹ (1.STMicroelectronics(Italy))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:10 PM - 4:40 PM |PDF Download

[N-2-03] Temperature Dependence of Current-Voltage of Ni Schottky Diodes on Cleaved m-plane n-GaN Surfaces

H. Imadate¹, T. Aoki¹, T. Mishima²,^○K. Shiojima¹ (1.Univ. of Fukui(Japan), 2.Hosei Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:40 PM - 4:55 PM |PDF Download

[N-2-04] AlGaN Etching-induced Electron Traps in GaN Channel of Schottky Barrier Diodes

^○P. Ferrandis¹, M. Charles², Y. Baines², J. Buckley², G. Garnier², C. Gillot², G. Reimbold² (1.CEA-LETI, Univ. of Toulon(France), 2.CEA-LETI(France))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:55 PM - 5:10 PM |PDF Download

[N-2-05] Evaluation of Schottky Barrier Height on 4H-SiC m-Face {1-100} for SBD-Wall Integrated Trench MOSFET (SWITCH-MOS)

^○Y. Kobayashi^1,2, H. Ishimori¹, A. Kinoshita², T. Kojima^1,2, M. Takei^1,2, H. Kimura^1,2, S. Harada¹ (1.AIST(Japan), 2.Fuji Electric Co., Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 5:10 PM - 5:25 PM |PDF Download

[N-2-06] 2-Dimentional Characterization of 3C-SiC Layers Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, M. Shingo¹, N. Ichikawa², M. Kato² (1.Univ. of Fukui(Japan), 2.Nagoya Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 5:25 PM - 5:40 PM |PDF Download

[N-3-01(Invited)] III-Nitride-based Negative Differential Resistance and Resonant Tunneling Devices With up to THz Operation Capability

^○D. Pavlidis¹ (1.Boston Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 9:30 AM - 10:00 AM |PDF Download

734 results (281 - 290)

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