2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (521 - 530)

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[PS-9-03] Transport property of NbSe₂/WSe₂ van der Waals Junction

^○Y. Sata¹, R. Moriya¹, Y. Hoshi¹, S. Masubuchi¹, K. Watanabe², T. Taniguchi², K. Ueno³, T. Machida^1,4 (1.IIS, Univ. of Tokyo(Japan), 2.NIMS(Japan), 3.Saitama Univ.(Japan), 4.INQIE, Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-9-04] Optical Characterization of Ultrathin Ge-on-Insulator: Electron and Phonon Confinement, Raman Enhancement, Optical Phonon Lifetime Reduction, Acoustic Phonon Spectral Reconstruction and Drop in Thermal Conductivity

^○V. Poborchii¹, H. Ishii¹, H. Hattori¹, W. Chang¹, T. Tada¹, P. Geshev², T. Maeda¹ (1.AIST(Japan), 2.Institute of Thermophysics(Russia))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-9-05] High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

H. Li¹, D. Han¹,^○G. Cui¹, W. Yu¹, Y. Cong¹, S. Zhang¹, X. Zhang¹, Y. Wang¹ (1.Peking Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-9-06] Resistive Switching in Planar Metal/NiO Bilayer System with Low Voltage Operation

^○Y. Nakano¹, K. Okabe¹, T. Kimura¹ (1.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

[PS-9-07] Ultrafine (≤10nm) InGaN Quantum Structures Fabricated by Hydrogen Environment Anisotropic Thermal Etching (HEATE)

^○S. Ishijima¹, T. Mizutani¹, K. Ogawa¹, Y. Namae¹, A. Matsuoka¹, A. Kikuchi^1,2 (1.Sophia Univ.(Japan), 2.Sophia Nanotech. Res. Center(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:18 AM - 11:21 AM |PDF Download

[PS-9-08] Hole-Tunneling Si_1-xGe_x/Si ASDQW RTD with High Resonant Current and High Peak-to-Valley Current Ratio

^○A. Shinkawa¹, M. Wakiya¹, Y. Maeda¹, T. Tsukamoto¹, Y. Suda¹ (1.Tokyo Univ. of Agri. & Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:21 AM - 11:24 AM |PDF Download

[PS-9-09] DFT-based ab initio MD Simulation of the Ionic Conduction in N/F-Doped ZrO₂ under Epitaxial Strain

^○M. Oka¹, H. Kamisaka¹, T. Fukumura², T. Hasegawa^1,3 (1.Univ. of Tokyo(Japan), 2.Tohoku Univ.(Japan), 3.KAST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:24 AM - 11:27 AM |PDF Download

[PS-9-10] Withdrawn

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:27 AM - 11:30 AM

[PS-9-11(Late News)] Electronic Band Structure of TiN/MgO nanostructures

^○K. Kobayashi¹, H. Takaki^1,2, M. Shimono¹, N. Kobayashi², K. Hirose³ (1.NIMS(Japan), 2.Univ. of Tsukuba(Japan), 3.NEC Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:30 AM - 11:33 AM |PDF Download

[PS-9-12(Late News)] Gate-stack Engineering of Self-organized Nanospherical Ge-gate/SiO₂/Si_1-_xGe_x-channel on Si (100) and Si (110) for Ge MOS Devices

P. H. Liao¹, C. W. Tien², K. P. Peng², H. C. Lin², T. George¹,^○P. W. Li^1,2 (1.National Central Univ.(Taiwan), 2.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:33 AM - 11:36 AM |PDF Download

734 results (521 - 530)

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