[O-3-01(Invited)] Strained SiGe FinFETs for High Performance CMOS

^○P. Hashemi¹ (1.IBM T.J. Watson Research Center(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 9:30 AM - 10:00 AM |PDF Download

[O-3-02] Thickness-Defined Poly-Si FinFETs (TD-FinFFTs) with 5nm Fin-Width and Performance Enhancement by Local Strain Boost Technique

^○J. -Y. Lin¹, T. S. Chao¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:00 AM - 10:20 AM |PDF Download

[O-3-03] HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.

^○L. Gaben^1,2,3, S. Pauliac², J. -A. Dallery⁴, J. Bustos¹, R. Dechanoz², B. Hemard¹, L. Koscianski², X. Bossy¹, M. -P. Samson¹, S. Barraud², S. Monfray¹, F. Boeuf¹, T. Skotnicki¹, F. Balestra³, M. Vinet² (1.STMicroelectronics(France), 2.CEA-LETI(France), 3.IMEP-LAHC(France), 4.Vistec Electron Beam GmbH(Germany))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:20 AM - 10:40 AM |PDF Download

[O-4-01] Opportunity of Ferroelectric Phase Formation in Nitrogen-doped HfO₂

^○L. Xu¹, T. Nishimura¹, S. Shibayama¹, T. Yajima¹, S. Migita², A. Toriumi¹ (1.Univ. of Tokyo(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 1:30 PM - 1:50 PM |PDF Download

[O-4-02] Evaluation of Potential Change and Electrical Dipole in HfO₂/SiO₂/Si Structure

^○N. Fujimura¹, A. Ohta¹, K. Makihara¹, S. Miyazaki¹ (1.Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 1:50 PM - 2:10 PM |PDF Download

[O-4-03] Tunneling Electro-resistance Effect in Ultra-thin Ferroelectric HfO₂ Junctions

^○X. Tian¹, S. Shibayama^1,2, T. Nishimura¹, T. Yajima¹, S. Migita³, A. Toriumi¹ (1.Univ. of Tokyo(Japan), 2.JSPS(Japan), 3.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:10 PM - 2:30 PM |PDF Download

[O-4-04] Depolarization Process in Ferroelectric HfO₂ Probed by Piezo-response Force Microscopy (PFM)

^○S. Shibayama^1,2, L. Xu¹, X. Tian¹, S. Migita³, A. Toriumi¹ (1.Univ. of Tokyo(Japan), 2.JSPS(Japan), 3.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:30 PM - 2:50 PM |PDF Download

[O-5-01] Demonstration of Ultra-Thin Buried Oxide Germanium-on-Insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

^○Z. Zheng¹, X. Yu¹, M. Xie¹, R. Cheng¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ.(China))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 9:30 AM - 9:50 AM |PDF Download

[O-5-02] Advanced Layer Transfer Technology for Ultra Thin Body Ge on Insulator

^○T. Maeda¹, W. Chang¹, T. Irisawa¹, H. Ishii¹, H. Hattori¹, V. Pobortchii¹, Y. Kurashima¹, H. Takagi¹, N. Uchida¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 9:50 AM - 10:10 AM |PDF Download

[O-5-03] Novel Band Structure Modulations in Two/Three-Dimensional Silicon Carbon Alloys

^○T. Mizuno¹, Y. Nagamine¹, Y. Omata¹, M. Yokoyama¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ.(Japan), 2.Tokyo Univ. of Agri. & Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:10 AM - 10:30 AM |PDF Download