2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (381 - 390)

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[PS-3-03] Influence of Line-Edge Roughness (LER) on Multiple-Gate (MG) Tunnel Field-Effect Transistors (TFETs)

^○W. Y. Choi¹, S. H. Choi¹, J. W. Lee¹, I. Huh¹ (1.Sogang Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-3-04] Investigation of Ge Channel Negative Capacitance FET with Analytical Model: Impact of Ferroelectric Dielectrics

^○Y. Peng¹, G. Han¹, Z. Chen¹, Q. Li¹, C. Zhang¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-3-05] Performance Comparison of Si, In_0.53Ga_0.47As and GaSb 10-nm Double Gate nMOSFETs by Deterministically Solving Time Dependent BTE

^○S. Di¹, L. Shen¹, Z. Lun¹, P. Chang¹, K. Zhao^1,2, T. Lu¹, G. Du¹, X. Liu¹ (1.Peking Univ.(China), 2.Beijing Info. Sci. and Tech. Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-3-06] Temperature and Doping Concentration Dependence Characteristics in Junctionless Gate-all-Around Polycrystalline Silicon Thin-Film-Transistors

^○C. T. Tso¹, T. Y. Liu¹, F. M. Pan¹, J. T. Sheu¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

[PS-3-07] A Physical Based Model for Negative Bias Temperature Instability

C. Ma¹,^○F. Sun¹, L. Zhang², X. Lin¹, M. Chan² (1.Peking Univ.(China), 2.Hong Kong Univ. of Sci. and Tech.(Hong Kong))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:18 AM - 11:21 AM |PDF Download

[PS-3-08] Negative Bias Temperature Instability by Body Bias on Ring Oscillators in Thin BOX Fully-Depleted Silicon on Insulator Process

^○R. Kishida¹, K. Kobayashi¹ (1.Kyoto Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:21 AM - 11:24 AM |PDF Download

[PS-3-09] Study of Self-heating Effects in Hybrid SOI/bulk Nanoscale FinFETs

^○U. Kumar¹, V. Rao² (1.Indian Inst. of Tech. Bombay(India), 2.Indian Inst. of Tech. Delhi(India))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:24 AM - 11:27 AM |PDF Download

[PS-3-10] Analysis and Modeling of Zero-V_TH Native Devices with Industry Standard BSIM6 Model

^○C. Gupta¹, H. Agarwal¹, Y. K. Lin², S. Khandelwal², A. Ito³, C. Hu², Y. S. Chauhan¹ (1.Indian Inst. of Tech. Kanpur(India), 2.Univ. of California, Berkeley(USA), 3.Broadcom(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:27 AM - 11:30 AM |PDF Download

[PS-3-11] Low Frequency Noise of Accumulation-Mode n- and p-MOSFETs fabricated on (110) Crystallographic Silicon-Oriented Wafers

^○P. Gaubert¹, A. Teramoto¹, S. Sugawa¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:30 AM - 11:33 AM |PDF Download

[PS-3-12] Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors

^○M. Higashino¹, H. Aoki¹, N. Tsukiji¹, M. Kazumi¹, T. Totsuka¹, S. Shibuya¹, K. Kurihara¹, H. Kobayashi¹ (1.Gunma Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:33 AM - 11:36 AM |PDF Download

734 results (381 - 390)

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