[A-6-8] In-Situ Impurity Doping in Si1-x-yGexCy Epitaxial Growth Using Ultraclean LPCVD

D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura, J. Murota (1.Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Edge Direct Tunneling (EDT) Induced Drain and Gate Leakage in Ultrathin Gate Oxide MOSFETs

K. N. Yang, H. T. Huang, M. J. Chen, Y. M. Lin, M. H. Yu, S. M. Jang, C. H. Yu, M. S. Liang (1.Department of Electronics Engineering, National Chiao-Tung University, 2.R/D Department, Taiwan Semiconductor Manufacturing Company)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Quantitative Evaluation of Quantum Mechanical Influence on Flat-Band Capacitance of Poly-Si/SiO2/Si Substrate System and the Impact of Oxide Charge Density

Akira SHIMIZU, Yasuhisa OMURA (1.High-Technology Research Center and Faculty of Engineering, Kansai University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Modeling of the Series Resistance for Below 100nm MOSFET Regime

Seong-Dong Kim, Cheol-Min Park, Jason C. S. Woo (1.Department of Electrical Engineering, University of California)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-3-4] Compact Expressions for Crosstalk of Multiple Bit Lines in DRAM

Hongchin Lin, Yun-Tso Lai, Shyh-Chyi Wong (1.Dept. of Electrical Engineering, National Chung-Hsing University, 2.Taiwan Semiconductor Manufacturing Corp.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-3-5] Statistical Threshold Fluctuations in Si-MOSFETs: Jellium vs. Atomistic Dopant Variations

Nobuyuki Sano, Masaaki Tomizawa, Kenji Natori (1.Institute of Applied Physics, University of Tsukuba, 2.NTT Lifestyle and Environmental Technology Labs)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-3-6] Characteristic of Electron Pumps Based on Silicon Coulomb Blockade Devices

Thomas Altebaeumer, Haroon Ahmed (1.Microelectronics Research Center, Cavendish Laboratory, University of Cambridge)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] The Vertical Replacement-Gate (VRG) MOSFET: A High-Performance Vertical MOSFET with Lithography-Independent Critical Dimensions

Jack Hergenrother, Don Monroe (1.Bell Laboratories, Lucent Technologies)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LB-1-1] Plasma Charging Damage Immunity in SOI Devices

Mukesh Khare, A. Mocuta, E. Leobandung, T. Chou, B. Linder, W. Rausch, P. Agnello, F. Assaderaghi, L. T. Su, G. Shahidi, T.-C. Chen (1.IBM Semiconductor Research and Development Center (SRDC), 2.IBM Research Division, T. J. Watson Research Center)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LB-1-2] Reduction of ROn in Vertical Power-MOSFETs due to Local Channel Doping

C. Fink, J. Schulze, I. Eisele, W. Hansch, W. Werner, W. Kanert (1.Institute of Physics, University of the German Federal Armed Forces, 2.Department of Electrical Engineering, Technical University of Munich, 3.Infineon Technologies AG)

2000 International Conference on Solid State Devices and Materials |PDF Download