[G-1-6] A Study on Bias Dependence of IMD Asymmetry in HBT Using Nonlinear Large-Signal Model

Hyun-Min Park、Songcheol Hong (1.Dept. EECS, Korea Advanced Institute of Science and Technology (KAIST))

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-1] Progress of GaInNAs Long Wavelength Lasers

Tomoyuki Miyamoto、Fumio Koyama (1.Microsystem Research Center, P&I Lab., Tokyo Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-2] Metal-Semiconductor Hybrid Granular Films Designed for High-Sensitive Magnetic Field Sensors

Hiro Akinaga、Masaki Mizuguchi、Hideki Oki、Takashi Manago、Fumiyoshi Takano、Kanta Ono、Masaharu Oshima、Hirotaka Oshima、Yutaka Shimizu、Atsushi Tanaka、Hiromi Kuramochi (1.Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology (AIST)、2.SYNAF, The University of Tokyo、3.SYNAF, Fujitsu Limited、4.SYNAF, Seiko Instruments Inc., Scientific instruments Division)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-3] Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy

Atsushi Koizumi、Kentaro Inoue、Yasufumi Fujiwara、Taketoshi Yoshikane、Akira Urakami、Yoshikazu Takeda (1.Dept. of Materials Science and Engineering, Graduate School of Engineering, Nagoya University)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-4] Self-Assembly of Thin Disk-Shaped GaAs Blocks on Si Substrates

Ikuo Soga、Yutaka Ohno、Shigeru Kishimoto、Koichi Maezawa、Takashi Mizutani (1.Graduate School of Engineering, Nagoya University)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-5] Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GSMBE Using Tertiarybutylphosphine (TBP)

T. Kakumu、F. Ishikawa、S. Kasai、T. Hashizume、H. Hasegawa (1.Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-6] Fabrication of Sub-micron Y-Gate InP MESFETs using Crystallographically Defined Contact Technology

Myounghoon Yoon、Kyounghoon Yang (1.Division of Electrical Engineering Dept. of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST))

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Ultra-thin Silicon Channel Single- and Double-gate MOSFETs

Meikei Ieong、Jakub Kedzierski、Zhibin Ren、Bruce Doris、Thomas Kanarsky、H-S Philip Wong (1.IBM Semiconductor Research and Development Center (SRDC), Microelectronic Division、2.IBM SRDC, T.J Watson Research Center)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Corrugated-Channel Transistor (CCT) for Area-Conscious Applications

Tomoyasu Furukawa、Hiroki Yamashita、Hideo Sunami (1.Hiroshima University, Research Center for Nanodevices and Systems)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices

Yang-Kyu Choi、Daewon Ha、Tsu-Jae King、Jeffrey Bokor (1.Department of Electrical Engineering and Computer Sciences University of California)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード