[E-3-4] Normally-off Operation GaN HEMT Devices with Nano-pattern Structure

Y.K. Fu¹、W.H. Kuo¹、S.F. Lin¹、Y.L. Chou¹ (1.Indus. Tech. Res. Inst. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-5] Enhancement-mode AlGaN/GaN HEMTs by selective area growth of AlGaN layer with Al₂O₃ deposition

T. Narita¹、K. Inoue¹、A. Wakejima¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-6] Study of Constant Voltage Off-state Stress on Au-free AlGaN/GaN Schottky Barrier Diodes

J. Hu^1,2、S. Stoffels¹、S. Lenci¹、T. Wu^1,2、N. Ronchi¹、S. You¹、B. Bakeroot^1,3、G. Groeseneken^1,2、S. Decoutere¹ (1.imec、2.KU Leuven、3.Ghent Univ. (Belgium))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-1] The Continuing Evolution of Silicon Carbide Power MOSFETs

J.A. Cooper¹ (1.Purdue Univ. (USA))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-2] 3.3-kV Double Channel-Doped SiC Vertical JFET in Cascode Configuration

H. Shimizu¹、S. Akiyama¹、N. Yokoyama¹、A. Shima¹、Y. Shimamoto¹ (1.Hitachi Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-3] Temperature Dependence of Current Gain in 4H-SiC Bipolar Junction Transistors

S. Asada¹、T. Okuda¹、T. Kimoto¹、J. Suda¹ (1.Kyoto Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-4L] 3.3 kV/1500 A Power Modules for the World’s First All-SiC Traction Inverter

K. Hamada¹、S. Hino^1,2、N. Miura¹、H. Watanabe^1,2、S. Nakata^1,2、E. Suekawa³、Y. Ebiike³、M. Imaizumi³、I. Umezaki³、S. Yamakawa^1,2 (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.、2.R&D Partnership for Future Power Electronics Technology (FUPET)、3.Power Device Works, Mitsubishi Electric Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-1] High-speed and Low-leakage Characteristics of 60-nm C-axis Aligned Crystalline Oxide Semiconductor FET with GHz-ordered Cutoff Frequency

Y. Yakubo¹、S. Nagatsuka¹、S. Matsuda¹、S. Hondo¹、Y. Hata¹、Y. Okazaki¹、Y. Yamamoto¹、M. Nagai¹、S. Sasagawa¹、T. Atsumi¹、M. Sakakura¹、T. Nakura²、Y. Yamamoto¹、S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd.、2.Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-2] A Novel Method for Fabrication of Sub-100nm IGZO TFTs

B.S. Shie¹、H.C. Lin^1,2、T.Y. Haung¹ (1.NCTU、2.National Nano Device Labs. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-3] All Solution Processed High Performance In-Ga-Zn-O Thin Film Transistor Fabricated at Low Temperature using Microwave irradiation

K.W. Jo¹、W.J. Cho¹ (1.Kwangwoon Univ., Department of Electronic Materials Engineering (Korea))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード