[F-7-4] Robust and High Sensitive Myoelectric Signal Detection utilizing Stochastic Resonance with Carbon Nanotube Composite Paper-based Surface Electrodes

^○K. Shirata¹, S. Kasai¹, T. Oya², Y. Hagiwara³, S. Kaeriyama³, H. Nakamura³ (1.Hokkaido Univ., 2.Yokohama National Univ., 3.STARC(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:45 AM - 12:00 PM |PDF Download

[F-7-5] Respiratory Sensor Measuring Capacitance Constructed Across Skin

M. Terasawa¹, S. Kumagai¹, ^○M. Sasaki¹ (1.Toyota Tech. Inst.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 12:00 PM - 12:15 PM |PDF Download

[F-7-6] Monitoring of Hydroxyapatite Crystal Formation using Field Effect Transistor

^○T. Kajisa¹, T. Sakata² (1.PROVIGATE Inc., 2.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 12:15 PM - 12:30 PM |PDF Download

[G-1-1] (Invited) Ultrapure Diamond Growth by Chemical Vapor Deposition

^○T. Teraji (1.NIMS(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:00 PM - 2:30 PM |PDF Download

[G-1-2] Effect of Stacking Faults on Magnetic Flux Pinning in Boron-Doped Superconducting Diamond Films

^○M. Shibata^1,2, T. Kageura^1,2, T. Yamaguchi³, Y. Takano³, H. Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Res. Inst. For Materials Sci. and Tech., 3.NIMS(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:30 PM - 2:45 PM |PDF Download

[G-1-3] Beyond 10 μm Thick Crack-Free GaN Growth on Si for High Power Device Applications

^○A. Tanaka¹, R. Chen¹, S. A. Dayeh¹ (1.Univ. of California, San Diego(USA))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:45 PM - 3:00 PM |PDF Download

[G-1-4] Electrical Characteristics of N-polar p-type GaN Schottky Contacts

^○T. Aoki¹, T. Tanikawa², R. Katayama², T. Matsuoka², K. Shiojima¹ (1.Univ. of Fukui, 2.IMR, Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:00 PM - 3:15 PM |PDF Download

[G-1-5] Novel Evaluation Technique of GaN Surfaces Using Laser-induced Terahertz Emission

^○Y. Sakai¹, I. Kawayama¹, H. Nakanishi², M. Tonouchi¹ (1.Osaka Univ., 2.SCREEN Holdings Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:15 PM - 3:30 PM |PDF Download

[G-1-6] In Situ Synchrotron X-ray Diffraction Studies of Nitride Semiconductor Materials

T. Sasaki¹, ^○M. Takahasi¹ (1.Japan Atomic Energy Agency(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:30 PM - 3:45 PM |PDF Download

[G-3-1] High-density Self-assembled Quantum Dots of InGaAs for Ultrafast and Efficient Spin Injection

^○J. Takayama¹, T. Kiba², T. Yamamura¹, D. Yamazaki¹, S. Chen¹, A. Murayama¹ (1.Hokkaido Univ., 2.Kitami Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:00 AM - 9:15 AM |PDF Download