[PS-1-9] Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge_1-xSn_x Epitaxial Layer

^○J. Jeon¹, T. Asano^1,2, W. Takeuchi¹, M. Kurosawa^1,3, O. Nakatsuka¹, S. Zaima^1,3 (1.Nagoya Univ., 2.Res. Fellow of the Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-10] n⁺Si/pGe Cross Heterojunctions Fabricated by Narrow Membrane Bonding

^○T. C. Liu^1,2, S. Kabuyanagi^1,2, T. Nishimura^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

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[PS-1-11] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance

^○S. Tanaka¹, Y. Nagatomi¹, Y. Nagaoka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

^○A. Suzuki¹, O. Nakatsuka¹, S. Shibayama^1,2, M. Sakashita¹, W. Takeuchi¹, M. Kurosawa^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ., 2.Res. Fellow of The Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

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[PS-1-13] Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs

^○Y. Morita¹, T. Mori¹, K. Fukuda¹, W. Mizubayashi¹, S. Migita¹, K. Endo¹, S. O'uchi¹, Y. X. Liu¹, M. Masahara¹, T. Matsukawa¹, H. Ota¹ (1.AIST(Japan))

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[PS-1-14] Observation of Plastic and Elastic Deformations in Ge Films of Bonded GeOI

^○T. Nishimura¹, T. Nakamura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

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[PS-1-15] Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated Local Layer Transfer and Fabrication of High-Performance MOSFETs on Insulator

^○M. Akazawa¹, S. Takeshima¹, A. Nakagawa¹, K. Hiramatsu¹, S. Higashi¹ (1.Hiroshima Univ.(Japan))

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[PS-1-16] Comprehensive Characterization of Generated Trap Sites in Gate Insulator using Advanced Stress-induced Leakage Current Simulator

^○Y. Higashi¹, J. Chen¹, T. Ishihara¹ (1.Toshiba Corp.(Japan))

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[PS-1-17] First-Principles Study on Hydrogen Annealing Effect in Si/SiO₂ Interface by Thermal Oxidation

^○S. Kawachi¹, H. Hiroki¹, M. Araidai¹, H. Kageshima^2,4, T. Endoh^3,4, K. Shiraishi^1,4 (1.Nagoya Univ., 2.Shimane Univ., 3.Tohoku Univ., 4.JST-ACCEL(Japan))

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[PS-1-18] Angle-resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001)

^○H. Arai¹, H. Nohira¹ (1.Tokyo City Univ.(Japan))

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