Oral presentation

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[18a-A22-1] Investigation of reactivation mechanism of Si donors deactivated by plasma-induced defects in n-GaN

^○Hiroki Yokoyama¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

9:15 AM - 9:30 AM

[18a-A22-2] Mapping of Ni/n-SiC Schottky contacts using internal photoemission microscopy

^○Yuhei Kihara¹, shingo Yamamoto¹, Kenji Shiojima¹ (Univ. of Fukui¹)

9:30 AM - 9:45 AM

△ [18a-A22-3] Mapping of crystalline of n-GaN Schottky contacts using scanning internal photoemission microscopy --influence of surface structure--

^○Shingo Yamamoto¹, Yuhei Kihara¹, Kenji Shiojima¹ (Univ. of Fukui¹)

9:45 AM - 10:00 AM

[18a-A22-4] Temperature Dependence of TiN-Anode GaN Schottky Barrier Diode Characteristic for Microwave Power Rectification

^○Ryota Fujihara¹, Yuki Itai¹, Qiang Liu¹, Liuan Li¹, Yasuo Ohno², Jin-Ping Ao¹ (Tokushima Univ.¹, e-Device Inc.²)

10:00 AM - 10:15 AM

[18a-A22-5] Relative Importance of Interface-Roughness Scattering and Alloy-Disorder Scattering in AlGaN/GaN HEMTs

^○Yoshihiro Akiyama¹, Ryosuke Niwa¹, Hiroyuki Sakaki¹ (Toyota Technol. Inst.¹)

10:15 AM - 10:30 AM

[18a-A22-6] Evaluation of interface states between SiN and AlGaN by X-ray photoelectron spectroscopy under bias voltages

^○Tomohito Kawashima¹, Reiko Saito¹, Hidehiko Yabuhara¹ (Toshiba Corporate Manufacturing Engineering Center¹)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-A22-7] Estimation of active energy during electron capture process in AlGaN/GaN HEMT

^○Tomotaka Narita¹, Yuki Katayama¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

11:00 AM - 11:15 AM

[18a-A22-8] Improved Current Collapse in AlGaN/GaN HEMTs by O2 Plasma Treatment

^○Yoshiki Sakaida¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (Graduate School of Engineering, University of Fukui¹)

11:15 AM - 11:30 AM

[18a-A22-9] Current Collapse Suppression in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing

^○Kobayashi Yohei¹, Yoshitsugu Koji², Tokuda Hirokuni¹, Horita Masahiro², Uraoka Yukiharu², Kuzuhara Masaaki¹ (Graduate School of Engineering University of Fukui¹, Nara Institute of Science and Technology²)

11:30 AM - 11:45 AM

[18a-A22-10] Comparison of current collapse characteristics on AlGaN/GaN HEMT with Al2O3 passivation

^○Chihoko Mizue¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹ (SEI, TDL¹)

11:45 AM - 12:00 PM

[18a-A22-11] Influence of SiN_x, SiO₂ passivation layer to AlGaN/GaN structure

^○Akira Miyawaki¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Wataru Saito³, Hiromichi Ohashi¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.1³)

12:00 PM - 12:15 PM

[18a-A22-12] Reforming mechanism for ALD-Al₂O₃/GaN structure by high pressure water vapor annealing

^○Koji Yoshitsugu¹, Masahiro Horita¹, Urakawa Satoshi¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (NAIST¹)

Oral presentation

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:15～14:00 （12:15 PM - 2:00 PM）

2:00 PM - 2:15 PM

[18p-A22-1] Novel Overlaid Field Plate for Improvement of Drain I-V Characteristics of AlGaN/GaN HEMTs

^○Suguru Mase¹, Takashi Egawa¹, Akio Wakejima¹ (Nagoya Institute of Technology¹)

2:15 PM - 2:30 PM

[18p-A22-2] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (III)

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

2:30 PM - 2:45 PM

[18p-A22-3] Transfer characteristics in AlGaN /GaN Schottky contncts on semi-insulating GaN substrate

^○Takuma Nanjo¹, Akifumi Imai¹, Kenichiro Kurahashi¹, Yosuke Suzuki¹, Muneyoshi Suita¹, Toshiyuki Tanaka¹, Eiji Yagyu¹ (Mitsubishi Electric Corp.¹)

2:45 PM - 3:00 PM

[18p-A22-4] 150-nm InAlN/GaN HEMT fabricated by Y-gate process

^○Hiroyuki Ichikawa¹, Chihoko Mizue¹, Isao Makabe¹, Yasunori Tateno¹, Ken Nakata¹, Kazutaka Inoue¹ (Sumitomo Electric Industries, Ltd.¹)

3:00 PM - 3:15 PM

[18p-A22-5] Normally-Off GaN HEMT using Digital Etching Technique

^○Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu², Yasuyuki Miyamoto¹ (Tokyo Tech¹, Mitsubishi Electric Corporation²)

3:15 PM - 3:30 PM

[18p-A22-6] Analyses of contact resistance factors on non-alloy contacts to 2DEG of AlGaN/GaN structures from dependence of AlGaN layer thickness on resistance

^○Yusuke Takei¹, Mari Okamoto¹, Shin Man¹, Rei Kayanuma¹, Tomohiro Shimoda¹, Youhei Mitsui¹, Wataru Saito², Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (Tokyo Inst. Technology¹, Toshiba²)

3:30 PM - 3:45 PM

[18p-A22-7] Reduction of threshold voltage in ALD-Al₂O₃/AlGaN/GaN MIS-HEMT by post-deposition annealing

^○(M2)Yusuke Yoshida¹, Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

3:45 PM - 4:00 PM

△ [18p-A22-8] Study on temperature dependence of breakdown voltage in AlGaN/GaN HEMTs

^○(PC)Kazuki Kodama¹, Hirokuni Tokuda¹, Masaaki Kuzahara¹ (Univ. of Fukui¹)

Break 16:00～16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[18p-A22-9] Influence of InAlN Spacer on Electrical Properties of AlGaN/GaN and InAlN/GaN Heterostructure

^○Hiromasa Murakoshi¹, Arata Watanabe¹, Takashi Egawa¹ (Nagoya Inst. Tech.¹)

4:30 PM - 4:45 PM

[18p-A22-10] Enhanced 2DEG mobility by thermally induced strain between deposited metals and AlGaN/GaN heterostructures

^○Goh Kawaguchi¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (Fukui Univ.¹)

4:45 PM - 5:00 PM

[18p-A22-11] Investigation of heat dissipation in AlGaN/GaN HEMTs transferred to a copper plate using layered BN release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

5:00 PM - 5:15 PM

[18p-A22-12] Investigation on threshold voltage of GaN-based junctionless transistors by device simulation

^○Minjae Yoon¹, Akira Nakajima², Kuniyuki Kakushima¹, Yoshinori Kataoka¹, Akira Nishiyama¹, Hitoshi Wakabayashi¹, Kenji Natori¹, Kazuo Tsutsui¹, Nobuyuki Sugii¹, Hirosi Iwai¹, Shinichi Nishizawa², Hiromichi Ohasi² (Tokyo Tech.¹, AIST²)

5:15 PM - 5:30 PM

[18p-A22-13] Investigation of Fe atom diffusion in Ga₂O₃

^○Kohei Sasaki^1,2, Man Hoi Wong², Masataka Higashiwaki², Akito Kuramata¹, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT²)

5:30 PM - 5:45 PM

[18p-A22-14] Band alignment of Al2O3/β-Ga2O¬3 heterojunctions

^○Kamimura Takafumi¹, Sasaki Kohei^2,1, Wong Man Hoi¹, Krishnamurthy Daivasigamani¹, Kuramata Akito², Yamakoshi Shigenobu¹, Higashiwaki Masataka¹ (NICT¹, Tamura Corp.²)

5:45 PM - 6:00 PM

△ [18p-A22-15] Frequency Dependence Gate Capacitance of Diamond MOSFETs

^○(M1)Kazuya Harada¹, Kazuyuki Hirama², Toshiyuki Oishi¹, Makoto Kasu¹ (Saga Univ.¹, NTT BRL²)

Poster presentation

[19p-PB2-1~19] 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:30 PM - 3:30 PM

[19p-PB2-1] Surface defects of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts

^○Toshichika Aoki¹, Kenji Shiojima¹ (University of Fukui¹)

1:30 PM - 3:30 PM

[19p-PB2-2] Influence of Surface Treatments on Ni/AlGaN/GaN Schottky Characteristics (2)

^○(M2)ariabasu arusaruman¹, takayuki sawada¹, kazuhiko suzuki¹, takahiru masuda¹ (hokkaido University of Science¹)

1:30 PM - 3:30 PM

[19p-PB2-3] Application of Al₂O₃/InAlN interface formed by 2-step ALD to MOSHEMT

^○Yoichiro Odanagi¹, Masamichi Akazawa¹, Asubar Joel¹, Zenji Yatabe¹, Tamotsu Hashizume¹ (Hokkaido Univ.¹)

1:30 PM - 3:30 PM

[19p-PB2-4] Characterization of traps in AlGaN/GaN HEMTs on Si by drain conductance DLTS

^○Kazuki Miyamoto¹, Yutaka Tokuda¹, Hiroyuki Ueda², Takashi Katuno², Toru Kachi² (Aichi Inst. of Technol.¹, Toyota Central R&D Lab.,Inc.²)

1:30 PM - 3:30 PM

[19p-PB2-5] C-t Evaluation of Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

^○Yoshitaka Nakano¹, Yoshihiro Irokawa², Masatomo Sumiya², Shuichi Yagi³, Hiroji Kawai³ (Chubu Univ.¹, NIMS², POWDEC³)

1:30 PM - 3:30 PM

[19p-PB2-6] Electrical Characterization of HVPE-GaN films with Ar⁺ Ion Bombardment

^○Yoshitaka Nakano¹, Keiji Nakamura¹, Masahito Niibe², Retsuo Kawakami³ (Chubu Univ.¹, Univ. Hyogo², Univ. Tokushima³)

1:30 PM - 3:30 PM

[19p-PB2-7] RF Characteristics of AlGaN/GaN HEMTs with Slant Field Plates

^○Shinya Hatakeyama¹, Kengo Kobayashi¹, Tomohiro Yoshida¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹)

1:30 PM - 3:30 PM

[19p-PB2-8] Chemical Vapor Deposition of Silicon-based Insulator Films Enhanced by Surface-Wave Plasma and Application to Nitride Devices

^○Hiroshi Okada^1,2, Kyohei Kawakami², Takahiro Ishimaru², Masatoshi Shinohara², Masakazu Furukawa³, Akihiro Wakahara^2,1, Hiroto Sekiguchi² (EIIRIS¹, Toyohashi Tech², Aries Research Group³)

1:30 PM - 3:30 PM

[19p-PB2-9] Formation of p-n Junction by Mg Ion Implantation to n--GaN Epitaxial Layers on Free-Standing GaN Substrates

^○(M1)Yusuke Saijo¹, Takuya Oikawa¹, Shigeki Kato¹, Tomoyosi Mishima¹, Tohru Nakamura¹ (Hosei Univ.¹)

1:30 PM - 3:30 PM

[19p-PB2-10] Normally-off GaN MISFETs Using Ion Implantation of Magnesium

^○Hayao Kasai¹, Takuya Oikawa¹, Jun Kimura¹, Tomoyoshi Mishima¹, Tohru Nakamura¹ (Hosei univ.¹)

1:30 PM - 3:30 PM

[19p-PB2-11] High Power Operation of Self-aligned Ion-implanted MISFETs on p-GaN Substrates

^○(M1)Jun Kimura¹, Hayao Kasai¹, Tohru Nakamura¹, Tomoyosi Misima¹ (Hosei¹)

1:30 PM - 3:30 PM

[19p-PB2-12] Ion-implanted Vertical Bipolar Transistor on Free-Standing GaN Substrates

^○(M2)Kengo Takahashi¹, Kazuki Nomoto², Tomoyoshi Mishima¹, Tohru Nakamura¹ (Hosei Univ.¹, University of Notre Dame.²)

1:30 PM - 3:30 PM

[19p-PB2-13] Effects of SiO₂ deposition process on formation of contacts to 2D hole gas layers

^○Shunsuke Kubota¹, Rei Kayanuma¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^2,3, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (Tokyo Tech. IGSSE¹, Tokyo Tech. FRC², AIST³)

1:30 PM - 3:30 PM

[19p-PB2-14] 600 V Switching Characteristics of GaN Polarization Super Junction (PSJ) Transistor on Sapphire

^○Shuichi Yagi¹, Shoko Hirata¹, Fumihiko Nakamura¹, Sota Matsumoto¹, Hironori Nakamura¹, Hiroji Kawai¹ (POWDEC K.K.¹)

1:30 PM - 3:30 PM

[19p-PB2-15] NOx gas sensing properties for Pd/ZnO/GaN heterojunction Diodes

^○Shu Fujita¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

1:30 PM - 3:30 PM

[19p-PB2-16] Physical mechanism for optical gain in InGaAs-MSM-PDs

^○Shunsuke Sugiyama¹, Yui Nishio¹, Marie Sato¹, Shusaku Hirata¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

1:30 PM - 3:30 PM

[19p-PB2-17] Gate voltage shift caused by accumulated holes in InAs PHEMTs

^○Yui Nishio¹, Shunsuke Sugiyama¹, Marie Sato¹, Shusaku Hirata¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

1:30 PM - 3:30 PM

[19p-PB2-18] Output power characteristics of InGaAs/InAlAs HEMT at 90-GHz frequency band

^○Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab. Ltd.²)

1:30 PM - 3:30 PM

[19p-PB2-19] Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate

^○Akira Endoh^1,2, Issei Watanabe¹, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (Nat. Inst. of Info. & Com. Tech.¹, Fujitsu Labs. Ltd.²)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

△ [18a-A22-3] Mapping of crystalline of n-GaN Schottky contacts using scanning internal photoemission microscopy --influence of surface structure--

[18p-A22-1~15] 14.3 Electron devices and Process technology

△ [18p-A22-8] Study on temperature dependence of breakdown voltage in AlGaN/GaN HEMTs

△ [18p-A22-15] Frequency Dependence Gate Capacitance of Diamond MOSFETs

[19p-PB2-1~19] 14.3 Electron devices and Process technology