〇Yoshiki Ono¹, Nanae Atsumi², Shogo Itoh², Yushin Numazawa², Yalei Huang³, Hirokazu Tatsuoka², Naohisa Takahashi⁴ (1.Fac. Eng. , Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol. , Shizuoka Univ., 3.Grad. Sch. Sci. & Technol. , Shizuoka Univ., 4.Yamaha Central Research Lab.)

9:30 AM - 11:30 AM

Mg treatment of CaSi₂

〇(M1C)Yushin Numazawa¹, Weng Mingwei², Shogo Itoh², Nanae Atsumi¹, Yoshiki Ono², Yalei Huang³, Hirokazu Tatsuoka¹, Naohisa Takahashi⁴ (1.Grad. Sch. Integr. Sci. & Tech., Shizuoka Univ., 2..Fac. Eng.,Shizuoka Univ, 3.Grad. Sch. Sci. & Tech., Shizuoka Univ., 4.Yamaha Advanced Material Research Gr.)

9:30 AM - 11:30 AM

[10a-PB2-7] Synthesis of Si nanowire/nanosheet complex by MnCl₂/NH₄Cl treatment of CaSi₂

〇Shogo Ito¹, Numazawa Yushin², Weng Mingwei¹, Atsumi Nanae², Ono Yoshiki¹, Huang yalei³, Tatsuoka Hirokazu², Takahashi Naohisa⁴ (1.Fac. Eng., Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol., Shizuoka Univ., 3.Grad. Sch. Sci. & Technol., Shizuoka Univ., 4.Yamaha Advanced Material Research Gr.)

9:30 AM - 11:30 AM

[10a-PB2-8] Influence of BaSi₂ template layer fabrication methods on the performance of p-BaSi₂/n-Si hetero junction solar cells

〇Ryota Sugiyama¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

9:30 AM - 11:30 AM

[10a-PB2-9] Influence of annealing condition on carrier density of BaSi₂ film

〇Yuki Kimura¹, Michinobu Fujiwara¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

▲ [10a-PB2-10] Study of the origin of defect levels in undoped-BaSi2 epitaxial films by PL measurement

〇Louise Benincasa^1,2, Hirofumi Hoshida³, Tianguo Deng¹, Takuma Sato^1,2, Kaoru Toko¹, Yoshikazu Terai³, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Univ. Grenoble Aples, 3.Kyushu Inst. Tech.)

9:30 AM - 11:30 AM

[10a-PB2-11] Optimization of donor activation conditions in Sb-doped β-FeSi₂ epitaxial films (II)

〇(M2)Hajime Eguchi¹, Mitsuki Abe¹, Ryota Kinoshita¹, Tomoki Murakami¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:30 AM - 11:30 AM

[10a-PB2-12] Dependence of active layer thickness on 1.5 μm PL properties in Si/B-doped β-FeSi₂/Si stacked structures

〇(M2)Naohiro Oka¹, Ryuji Satou¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:30 AM - 11:30 AM

△ [10a-PB2-13] Time resolution photothermal divergences signal of the exciting light dependence on SiC surface

〇Shintaro Harada¹, Shinya Takeichi¹, Shun Kamada², Weiwei Xu¹, Takanori Kozai¹, Takeshi Fujihara¹, Tao Zheng¹, Tomoya Konishi¹, Masaru Kamano¹ (1.NIT Anan College, 2.Tokushima Univ.)

9:30 AM - 11:30 AM

[10a-PB2-14] Synthesis and Characterization of Type II SiGe clathrate

Hirotaka Hisamatsu¹, Kunihiko Yamada², Himanshu S. Jha¹, Fumitaka Ohashi^1,2, 〇Tetsuji Kume^1,2 (1.Gifu Univ. Eng., 2.Gifu Univ. NST)

9:30 AM - 11:30 AM

[10a-PB2-15] Electronic structure of interstitial hydrogen in bulk single-crystalline InGaZnO₄

〇Masatoshi Hiraishi¹, Kenji Kojima², Hirotaka Okabe¹, Akihiro Koda^1,3, Ryosuke Kadono^1,3, Yuki Kobayashi⁴, Nobuaki Miyakawa⁴ (1.KEK-IMSS, 2.TRIUMF, 3.Sokendai, 4.Tokyo. Univ. Sci.)

9:30 AM - 11:30 AM

[10a-PB2-16] Investigation of group 2 element containing ternary phosphide semiconductors

〇(PC)Ryoji Katsube¹, Kou Harada², Fumiyasu Oba², Yoshitaro Nose¹ (1.Kyoto Univ., 2.IIR-MSL Tokyo Tech.)

9:30 AM - 11:30 AM

[10a-PB2-17] Formation and magneto-optical characterization of GaN/GdN superlattices (Ⅰ)
- effect of growth procedure in GdN wells -

〇Akifumi Okamoto¹, Hasegawa Shigehiko¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[10a-PB2-18] Fabrication of high quality iron oxide thin film on Si substrate using buffer layer

〇Kenta Yamanaka^1,2, Kengo Takano^1,2, Kenji Yamaguchi² (1.Ibaraki Univ., 2.QST)

Oral presentation

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 11, 2019 1:15 PM - 6:30 PM W834 (W834)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[11p-W834-1] Spectral sensitivity dependending on junction depth in Mg₂Si PDs

〇Haruhiko Udono¹, Yuuma Onizawa¹, Tatsuya Nakano¹ (1.Ibaraki Univ.)

1:30 PM - 1:45 PM

[11p-W834-2] Change of band structure of Mg₂Si induced by interstitial doping with non-metallic elements

〇Yoji Imai¹, Atsushi Yamamoto¹, Ken-ichi Takarabe² (1.AIST, 2.Okayama Univ. Sci.)

1:45 PM - 2:00 PM

[11p-W834-3] Photoreflectance spectra in highly-oriented Mg₂Si(111)//Si(111) film

〇Hirofumi Hoshida¹, S. Alexander², I. Chernev², N.G. Galkin², Toshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.FEBRAS)

2:00 PM - 2:15 PM

[11p-W834-4] Application of Non-destructive Contact Probe for Internal Photoemission Spectroscopy

〇Michiko Yoshitake¹, Deepak Sridhar¹, Shinjiro Yagyu¹ (1.NIMS)

2:30 PM - 2:45 PM

[11p-W834-5] Fabrication of BaSi₂ films by close-spaced evaporation

〇Kosuke Hara¹, Shuhei Takizawa¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

2:45 PM - 3:00 PM

[11p-W834-6] Effectiveness of two-step growth of BaSi₂ films formed by sputtering

〇Taira Nemoto¹, Satoshi Matsuno¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

3:00 PM - 3:15 PM

△ [11p-W834-7] Molecular beam epitaxy of high-quality BaSi₂ light absorbers using three-step growth method

〇Yudai Yamashita¹, Takuma Sato¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

3:15 PM - 3:30 PM

[11p-W834-8] Influence of Ba/Si deposition rate ratio on the minority carrier life time of B-doped BaSi₂ epitaxial films

〇Shu Sugiyama¹, Yuki Kimura², Yudai Yamashita¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

3:30 PM - 3:45 PM

[11p-W834-9] Fabrication of As-doped BaSi₂ films grown by molecular beam epitaxy

〇Sho Aonuki¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:00 PM - 4:15 PM

△ [11p-W834-10] Development of New p-type Semiconductor and its Application to Flexible Electronics

〇Kota Aoyama¹, Taehwan Jun¹, Junghwan Kim¹, Hideo Hosono¹ (1.MCES Tokyo Tech)

4:15 PM - 4:30 PM

▼ [11p-W834-11] Synthesis & Characterization of Ge-based Low Dimensional Material from Zintl Phase Compound, CaGe₂

〇(M2)Vimal Saxena¹, Hirokazu Tatsuoka¹, Yasuhiro Hayakawa², Naohisa Takahashi³ (1.GSIST Shizuoka Univ., 2.RIE Shizuoka Univ., 3.Yamaha Ad. Ma. Re. G)

4:30 PM - 4:45 PM

[11p-W834-12] Electronic Structure of Zintl-Phase Solar-Cell Material BaSi₂

〇Motoharu Imai¹ (1.NIMS)

4:45 PM - 5:00 PM

[11p-W834-13] Thermoelectric performances of pseudogap ε-CoSi thin films on Si substrates

〇Takahiro Hinakawa¹, Shunya Sakane¹, Takafumi Ishibe¹, Takeshi Fujita^2,3, Yoshiaki Nakamura^1,2 (1.Osaka Univ., 2.CREST-JST, 3.Kochi Univ. Technol.)

5:00 PM - 5:15 PM

▲ [11p-W834-14] Synthesis of Si-based Nanosheet Bundles using Metal Chlorides in Solutions

〇(D)Yalei Huang¹, Vimal Saxena², Kaito Tanaka³, Yasuhiro Hayakawa⁴, Hirokazu Tatsuoka², Naohisa Takahashi⁵ (1.GSST Shizuoka Univ., 2.GSIST Shizuoka Univ., 3.Dpt. Eng. Shiz. Uni., 4.RIE Shizuoka Univ., 5.Yamaha Ad. Ma. Re. G)

5:30 PM - 5:45 PM

[11p-W834-15] Characterization of Vacancy Defects in Ion-Beam-Synthesized β-FeSi₂ Films

〇Atsushi YABUUCHI¹, Takuya Karatsu¹, Atsushi Kinomura¹, Masaki Maekawa², Atsuo Kawasuso² (1.Kyoto Univ., 2.QST)

5:45 PM - 6:00 PM

[11p-W834-16] Electrical conduction mechanism of amorphous Si/β-FeSi₂composite thin films

〇(M1)Yuta Saito¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

6:00 PM - 6:15 PM

▼ [11p-W834-17] Significant photoresponsivity enhancement of BaSi2 epitaxial films by atomic hydrogen passivation

〇(D)Zhihao Xu¹, Tianguo Deng¹, Kaoru Toko¹, Dmitri Migas², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Belarusian State Univ.)

6:15 PM - 6:30 PM

[11p-W834-18] Investigations of defects inside bulk and thin-film BaSi₂ by EPR

〇Takuma Sato^1,2, Serge Gambarelli², Anne-Laure Barra³, Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.UGA, CEA, CNRS, INAC-SyMMES, 3.LNCMI-CNRS)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[10a-PB2-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [10a-PB2-10] Study of the origin of defect levels in undoped-BaSi2 epitaxial films by PL measurement

△ [10a-PB2-13] Time resolution photothermal divergences signal of the exciting light dependence on SiC surface

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

△ [11p-W834-7] Molecular beam epitaxy of high-quality BaSi2 light absorbers using three-step growth method

△ [11p-W834-10] Development of New p-type Semiconductor and its Application to Flexible Electronics

▼ [11p-W834-11] Synthesis & Characterization of Ge-based Low Dimensional Material from Zintl Phase Compound, CaGe2

▲ [11p-W834-14] Synthesis of Si-based Nanosheet Bundles using Metal Chlorides in Solutions

▼ [11p-W834-17] Significant photoresponsivity enhancement of BaSi2 epitaxial films by atomic hydrogen passivation

Authentication

△ [11p-W834-7] Molecular beam epitaxy of high-quality BaSi₂ light absorbers using three-step growth method

▼ [11p-W834-11] Synthesis & Characterization of Ge-based Low Dimensional Material from Zintl Phase Compound, CaGe₂