〇Shinsuke Miyagawa¹, Kazuhiro Gotoh¹, Markus Wilde², Shohei Ogura², Yasuyoshi Kurokawa¹, Katsuyuki Fukutani², Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.Institute of Industrial Sci., The Univ. of Tokyo)

3:30 PM - 3:45 PM

Si Heterostructure Revealed by Nuclear Reaction Analysis and Atomic Force Microscope

〇Yuta Nakagawa¹, Kazuhiro Gotoh¹, Markus Wilde², Shohei Ogura², Yasuyoshi Kurokawa¹, Katsuyuki Fukutani², Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.Institute of Industrial Sci., The Univ. of Tokyo)

3:45 PM - 4:00 PM

[12p-A403-10] Characterization of degradation by PDA of MoO_x CSC/cSi heterojunction cell (3):
By monitoring the variation of S/D conductance by PDA of a FET-TEG
with the lateral surface inversion layer as the channel (1)

〇Yutaka Hayashi¹, Takefumi Kamioka^2,1, Kazuhiro Gotoh³, Ryo Ozaki¹, Kyotaro Nakamura¹, Motoo Morimura¹, Noritaka Usami³, Yoshio Ohshita¹, Atsushi Ogura² (1.Toyota Techno. Inst., 2.Meiji Univ., 3.Nagoya Univ.)

4:15 PM - 4:30 PM

[12p-A403-11] Physical property of silicon oxide film by atomic layer deposition method

〇(D)Kenshiro Usuki^1,2, Mochizuki Toshimitsu², Tanahashi Katsuto², Takato Hidetaka², Yamaguchi Katsuhiko¹ (1.Fukushima Univ., 2.AIST)

4:30 PM - 4:45 PM

▼ [12p-A403-12] Effect of the tunnel oxide/AlO_x stacked hole-selective contacts on the junction properties at PEDOT:PSS/n-type Si interface

〇(D)Md Enamul Karim¹, Arifuzzaman Rajib¹, Yuki Nasuno¹, Tomofumi Ukai², Shunji Kurosu², Masahide Tokuda², Yasuhiko Fujii², Tatsuro Hanajiri², Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama University, 2.Toyo University)

4:45 PM - 5:00 PM

△ [12p-A403-13] [Highlight]Direct pattern printing of liquid Si by inkjet method

〇(M2)Yudai Yumoto¹, Maui Nakayama¹, Takashi Masuda¹, Kimihiko Saito², Hirotaka Katayama³, Akira Terakawa³ (1.JAIST, 2.Fukushima Univ., 3.Panasonic)

5:00 PM - 5:15 PM

[12p-A403-14] Microcrystalline Distribution Analysis in Thin-Film Microcrystalline Silicon Solar Cells by Atom Probe Tomography

〇Yasuo Shimizu¹, Kenji Taki², Taiki Hashiguchi², Hirotaka Katayama², Mitsuhiro Matsumoto², Akira Terakawa², Hitoshi Sai³, Takuya Matsui³, Koji Inoue¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Panasonic Corp., 3.AIST)

5:15 PM - 5:30 PM

[12p-A403-15] a-Si/c-Si interface analysis by using large-scale quantum molecular dynamics simulation

〇Hirotaka Katayama¹, Mitsuhiro Matsumoto¹, Tsuyoshi Takahama¹, Akira Terakawa¹ (1.Panasonic Corp.)

Oral presentation

[13a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Mar 13, 2020 9:15 AM - 11:45 AM A403 (6-403)

Yasuyoshi Kurokawa(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[13a-A403-1] Mössbauer Spectroscopic Evaluations of Fe impurity in Si-solar cells

〇Yutaka Yoshida¹ (1.Shizuoka Insti. of Sci. and Tech.)

9:30 AM - 9:45 AM

[13a-A403-2] Operand observation of Fe impurities in mc-Si solar cell under external voltages

〇(M1)Masashi Kobayashi¹, Keiko Ogai², Koich Moriguchi², Yu Masuda², Yutaka Yoshida¹ (1.Shizuoka Insti. of Sci. and Tech., 2.APCO. Ltd.)

9:45 AM - 10:00 AM

[13a-A403-3] Structural properties of generation sources of dislocations in polycrystalline Si ingots

〇Yutaka Ohno¹, Kazuya Tajima², Kentaro Kutsukake³, Noritaka Usami² (1.IMR, Tohoku Univ., 2.GSE, Nagoya Univ., 3.RIKEN)

10:00 AM - 10:15 AM

[13a-A403-4] Detection of grain boundaries in multicrystalline silicon wafers by image processing using machine learning

〇Kenta Yamakoshi¹, Kazuya Tajima¹, Kentaro Kutsukake², Takuto Kojima³, Noritaka Usami¹ (1.Grad. Sch. Eng., Nagoya Univ., 2.RIKEN AIP, 3.Grad. Sch. Inf., Nagoya Univ.)

10:15 AM - 10:30 AM

△ [13a-A403-5] Slicing damage evaluation for thin Si solar cells

〇(B)Yutaka Hara¹, Ryo Yokogawa^1,5, Kouhei Onishi¹, Takehumi Kamioka¹, Kyotaro Nakamura², Yoshio Ohshita², Tomoyuki Kawatsu³, Toshiki Nagai³, Noboru Yamada⁴, Yukio Miyashita⁴, Atsushi Ogura^1,6 (1.Meiji Univ., 2.Toyota Tech. Inst., 3.Komatsu NTC Ltd., 4.Nagaoka University of Technology., 5.JSPS Research Fellow DC, 6.Meiji Renewable Energy Laboratory)

10:45 AM - 11:00 AM

△ [13a-A403-6] Improvement of Si Solar Cells by Bayesian Optimization for Diffusion Process

〇Shogo Kunieda¹, Kentaro Imamura¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

11:00 AM - 11:15 AM

△ [13a-A403-7] Analysis of RPD-induced defects by annealing dependence of carrier lifetime

〇Tomohiko Hara¹, Riku Wakita¹, Takefumi Kamioka^1,2, Yoshio Ohshita¹ (1.Toyota Technol Inst, 2.Meiji Univ)

11:15 AM - 11:30 AM

▲ [13a-A403-8] Development of Double-sided TOPCon Solar Cells on Textured Silicon Wafer using ALD-SiO_x

〇(PC)Mickael Lozach¹, Shota Nunomura¹, Koji Matsubara¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

11:30 AM - 11:45 AM

△ [13a-A403-9] Evaluation of film properties of p-type hydrogenated nanocrystalline silicon thin films for application to silicon heterojunction solar cells

〇(P)Hiroshi Umishio¹, Hitoshi Sai¹, Takuya Matsui¹ (1.AIST)

Oral presentation

[14a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Sat. Mar 14, 2020 9:15 AM - 11:45 AM A403 (6-403)

Taeko Semba(Namics Corporation)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[14a-A403-1] Trends of Degradation Determined by Indoor Measurements of Photovoltaic Modules Exposed Outdoors in Tosu City

〇Yasuo Chiba¹, Sungwoo Choi¹, Ritsuko Sato¹, Tetsuyuki Ishii², Atsushi Masuda¹ (1.AIST, 2.CRIEPI)

9:30 AM - 9:45 AM

[14a-A403-2] Electro-luminescence Images of Photovoltaic Modules under natural Daylight

〇Kazumi Takano¹, Kenji Arimatsu² (1.ITES, 2.Tohoku E.Power)

9:45 AM - 10:00 AM

[14a-A403-3] Recovery Process of PID on p-Type-Based-Multicrystalline-Silicon-PV Modules by Application of Reverse-DC Voltage

〇Yasushi Sobajima¹, Go Sian Hi¹, Shingo Hashimoto¹, Kengo Shimizu¹, Nobukazu Kameyama¹, Fumitaka Ohashi¹, Hiroki Yoshida¹, Atsushi Masuda², Shuichi Nonomura¹ (1.Gifu Univ., 2.AIST)

10:00 AM - 10:15 AM

[14a-A403-4] Study of Fast Recovery Process of PID on Multicrystalline-Silicon-Based-PV Modules by Application of Reverse-Bias-Pulse Voltage

〇Shingo Hashimoto¹, Kiyoshiro Takada¹, Kengo Shimizu¹, Go Sian Huai¹, Nobukazu Kameyama¹, Fumitaka Ohashi¹, Hiroki Yoshida¹, Atsushi Masuda², Yasushi Sobajima¹, Shuichi Nonomura¹ (1.Gifu Univ., 2.AIST)

10:15 AM - 10:30 AM

[14a-A403-5] Influence on the Surface of p-Type Single Crystalline Si Cell by Potential Induced Degradation Test

〇Fumitaka Ohashi¹, Taishi Furuya¹, Nobukazu Kameyama¹, Yasushi Sobajima¹, Hiroki Yoshida¹, Atsushi Masuda², Shuichi Nonomura¹ (1.Gifu Univ., 2.AIST)

10:45 AM - 11:00 AM

[14a-A403-6] Effect of surface structure of photovoltaic cell on electric field

〇Yasushi Tachibana¹, Takeshi Toyoda¹, Sachiko Jonai², Yukiko Hara³, Hajime Shibata³, Atsushi Masuda³ (1.IRII, 2.Niigata Univ., 3.AIST)

11:00 AM - 11:15 AM

[14a-A403-7] Effect of a SiN_x film on the potential-induced degradation of n-type front-emitter c-Si photovoltaic modules

〇Tomoyasu Suzuki¹, Seira Yamaguchi¹, Kyotaro Nakamura², Atsushi Masuda³, Keisuke Ohdaira¹ (1.JAIST, 2.Toyota Tech. Inst., 3.AIST)

11:15 AM - 11:30 AM

[14a-A403-8] Effect of light irradiation on the PID of n-type front-emitter crystalline Si photovoltaic modules without SiO₂

〇Rongrong Zhao¹, Tomoyasu Suzuki¹, Seira Yamaguchi¹, Kyotaro Nakamura², Atsushi Masuda³, Keisuke Ohdaira¹ (1.JAIST, 2.Toyota Tech. Inst., 3.AIST)

11:30 AM - 11:45 AM

[14a-A403-9] PID phenomena and light irradiation effects for thin film silicon photovoltaic modules

〇Yukiko Hara¹, Atsushi Masuda¹ (1.AIST)

Poster presentation

[15a-PB4-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

Sun. Mar 15, 2020 9:30 AM - 11:30 AM PB4 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[15a-PB4-1] Improved passivation quality of TiO₂ electron-selective contacts by Ta doping

〇Seira Yamaguchi¹, Lee Hyunju¹, Ohshita Yoshio¹ (1.Toyota Tech. Inst.)

9:30 AM - 11:30 AM

[15a-PB4-2] Fabrication of ultra-thin TiO_x layer by solution process and its application to hole blocking layer of PEDOT: PSS/n-Si solar cell

〇(M1)Yuki Nasuno¹, Enamul Karim¹, Shunji Kurosu², Tomofumi Ukai², Masahide Tokuda², Fujii Yasuhiko², Tatsurou Hanajiri², Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama Univ., 2.Toyo Univ)

9:30 AM - 11:30 AM

[15a-PB4-3] Fabrication of Quasi Cells using Flash-Lamp-Crystallized Poly-Si Formed from Electron-Beam-Evaporated a-Si Films

〇Aimi Yago¹, Cham Thi Trinh², Daniel Amkreutz², Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST, 2.HZB)

9:30 AM - 11:30 AM

[15a-PB4-4] Room-Temperature Deposition of Sputtered Gallium Nitride as Electron Transport Layer for Silicon Heterojunction Solar Cell

〇Yuta Shiratori^1,2, Shinsuke Miyajima¹ (1.Tokyo Tech., 2.JSPS research fellowship (DC))

9:30 AM - 11:30 AM

[15a-PB4-5] Texture size and shape on silicon heterojunction solar cells

〇Jin Shiokawa¹, Mayumi Kimura¹, Sawa Ohnishi¹, Matsui Takuya², Nunomura Shota² (1.HPC, 2.AIST)

9:30 AM - 11:30 AM

[15a-PB4-6] Formation of p-a-Si by Cat-counter-doping

〇Taiyo Tsurugai¹, Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST)

9:30 AM - 11:30 AM

[15a-PB4-7] Performance of Silicon Heterojunction Solar Cells with Counter-doped n-a-Si

〇Tu ThiCam Huynh¹, Noboru Yamaguchi², Keisuke Ohdaira¹ (1.JAIST, 2.ULVAC)

9:30 AM - 11:30 AM

[15a-PB4-8] Passivation of crystalline Si surfaces by Cat-CVD i-a-Si/i-a-Si stacks

〇(M1)Yuki Terakado¹, Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST)

9:30 AM - 11:30 AM

[15a-PB4-9] Fabrication of back-contact Si heterojunction solar cells using Si substrates

〇(M1)Zheng WANG¹, Aimi Yago¹, Huynh Thi Cam Tu¹, Keisuke Ohdaira¹ (1.JAIST)

9:30 AM - 11:30 AM

[15a-PB4-10] Fabrication and characterization of bifacial IBC c-Si solar cell module

〇Tomihisa Tachibana¹, Katsuto Tanahashi¹, Syuichi Asao¹, Yuji Ino¹, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST)

9:30 AM - 11:30 AM

[15a-PB4-11] Potential-induced degradation of Si heterojunction photovoltaic modules under light irradiation

〇Jiaming Xu¹, Atsushi Masuda², Keisuke Ohdaira¹ (1.JAIST, 2.AIST)

9:30 AM - 11:30 AM

[15a-PB4-12] Recovery phenomena of potential-induced degradation in c-Si photovoltaic modules with impulse voltage application

〇Tetsuya Kaneko¹, Ryouta Tanabe¹, Kentaro Takano¹, Suy Kimsong¹, Yukiko Hara², Atsushi Masuda², Masao Isomura¹ (1.Tokai Univ., 2.AIST)

9:30 AM - 11:30 AM

[15a-PB4-13] TOF-SIMS analysis of the discolored electrodes of crystalline silicon PV mini-module degraded by pressure cooker test

〇Yuji Ino¹, Shuichi Asao¹, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST)

Sessions

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[12p-A403-1~15] 16.3 Bulk, thin-film and other silicon-based solar cells

▼ [12p-A403-12] Effect of the tunnel oxide/AlOx stacked hole-selective contacts on the junction properties at PEDOT:PSS/n-type Si interface

△ [12p-A403-13] [Highlight]Direct pattern printing of liquid Si by inkjet method

[13a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [13a-A403-5] Slicing damage evaluation for thin Si solar cells

△ [13a-A403-6] Improvement of Si Solar Cells by Bayesian Optimization for Diffusion Process

△ [13a-A403-7] Analysis of RPD-induced defects by annealing dependence of carrier lifetime

▲ [13a-A403-8] Development of Double-sided TOPCon Solar Cells on Textured Silicon Wafer using ALD-SiOx

△ [13a-A403-9] Evaluation of film properties of p-type hydrogenated nanocrystalline silicon thin films for application to silicon heterojunction solar cells

[14a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[15a-PB4-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

Authentication

▼ [12p-A403-12] Effect of the tunnel oxide/AlO_x stacked hole-selective contacts on the junction properties at PEDOT:PSS/n-type Si interface

▲ [13a-A403-8] Development of Double-sided TOPCon Solar Cells on Textured Silicon Wafer using ALD-SiO_x