Oral presentation

[20a-B103-1~12] 6.1 Ferroelectric thin films

Tue. Sep 20, 2022 9:00 AM - 12:15 PM B103 (B103)

Tomoaki Yamada(Nagoya Univ.), Hiroshi Uchida(Sophia Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

▲ [20a-B103-1] Dielectric Properties of Ba_xSr₁₋_xTiO₃ (x = 0.5) Epilayer Transferred on PET Substrate

〇(M2)RUI YU¹, Lizhikun Gong¹, Hiromichi Ohta², Tsukasa Katayama^2,3 (1.IST- Hokkaido Univ, 2.RIES-Hokkaido Univ, 3.JST-PRESTO)

9:15 AM - 9:30 AM

△ [20a-B103-2] Peeling off Epitaxial Pb(Zr,Ti)O₃ Films on SrTiO₃ (001) Substrates using Sacrificial Water-soluble Layers

〇(M1C)Kazuhiro Takahasi¹, Masahito Yoshino¹, Takanori Nagasaki¹, Shintaro Yasui², Sou Yasuhara², Tomoaki Yamada¹ (1.Nagoya Univ., 2.Tokyo Tech.)

9:30 AM - 9:45 AM

▼ [20a-B103-3] Enhanced extrinsic contribution in the piezoelectric response of epitaxial (K, Na)NbO₃ films

〇Xueyou Yuan¹, Kazuki Okamoto¹, Mitsuki Kawano¹, Masahito Yoshino¹, Takanori Nagasaki¹, Yasuhiko Imai², Osami Sakata², Tomoaki Yamada¹ (1.Nagoya Univ., 2.JASRI)

9:45 AM - 10:00 AM

[20a-B103-4] Composition dependence of electro-optic effect in epitaxial rhombohedral
Pb(Zr, Ti)O₃ thin films

〇Shinya Kondo¹, Tatsuki Utsunomiya¹, Takashi Teranishi^1,2, Tatuo Fujii¹, Tomoaki Yamada³, Akira Kishimoto¹ (1.Okayama Univ., 2.Tokyo Tech., 3.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [20a-B103-5] Zr/Ti ratio dependance of mechanical Q factor of Pb(Zr_x,Ti_1-x)O₃ epitaxial thin films

〇Sota Kuninobu^1,2, Yuki Shimizu^1,2, Takahiko Yanagitani^1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

10:15 AM - 10:30 AM

[20a-B103-6] Influence of Barium Hydroxide Concentration on BaTiO₃ Fine Particle Synthesis

〇Masaki Yamaguchi¹, Atsushi Saitoh¹, Takashi Yamamoto² (1.Shibaura Inst. of Tech., 2.Osaka Met. Univ.)

10:45 AM - 11:00 AM

[20a-B103-7] Crystal structure and dielectric properties of Ba(Zr_xTi_1-x)O₃ on (100)MgO substrate

〇Ryo Takahashi¹, Yoshitaka Ehara¹, Yosuke Hamasaki¹, Shinya Sawai¹, Shintaro Yasui², Shinnosuke Yasuoka², Hiroshi Funakubo², Ken Nishida¹ (1.NDA, 2.Tokyo Tech)

11:00 AM - 11:15 AM

[20a-B103-8] Improvement of polarization properties of one-axis-oriented PZT thin films by controlling chemical composition

〇Yusuke Yamasaki¹, Yukie Yokota¹, Hiromi Shima², Hiroshi Funakubo³, Hiroshi Uchida¹ (1.Sophia Univ., 2.Nat. Def. Acad, 3.Tokyo Tech.)

11:15 AM - 11:30 AM

[20a-B103-9] Crystal Structural and Properties of Epitaxial PbTiO₃-based Films Deposited by Hydrothermal Method

〇(M2)YUXIAN HU¹, Kazuki Okamoto¹, Hiroshi Funakubo¹ (1.Tokyo Tech.)

11:30 AM - 11:45 AM

[20a-B103-10] Cluster Analysis of Nanoscale Domain Dynamics in Ferroelectric Thin Films Using Local C-V Mapping Method

〇Yoshiomi Hiranaga¹, Takanori Mimura², Takao Shimizu², Hiroshi Funakubo², Yasuo Cho¹ (1.Tohoku Univ., 2.Tokyo Tech.)

11:45 AM - 12:00 PM

[20a-B103-11] Annealing effect of epitaxial Pb(Zr,Ti)O₃ thin films on Si substrate by sputtering

〇Genki Harada¹, Goki Kimura¹, Kiyotaka Tanaka¹, Sang Hyo Kweon¹, Isaku Kanno¹ (1.Kobe Univ.)

12:00 PM - 12:15 PM

[20a-B103-12] In-situ XRD of piezoelectric strain in epitaxial (K,Na)NbO₃ thin films

〇Rei Ogawa¹, Kiyotaka Tanaka¹, Sang Hyo Kweon¹, Isaku Kanno¹, Goon Tan², Tomoyuki Koganezawa³ (1.Kobe Univ., 2.Osaka Metropolitan Univ., 3.JASRI)

Oral presentation

[20p-B103-1~19] 6.1 Ferroelectric thin films

Tue. Sep 20, 2022 1:30 PM - 7:00 PM B103 (B103)

Isaku Kanno(Kobe Univ.), Takeshi Yoshimura(Osaka Metro. Univ.), Shinya Yoshida(Shibaura Institute of Technology), Hiroshi Naganuma(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[20p-B103-1] Fabrication of BiFeO epitaxial film on Si substrates by magnetron sputtering method Ⅱ

〇Kohei Takaki¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Met Univ.)

1:45 PM - 2:00 PM

[20p-B103-2] Fabrication of InSb thin film on Co substituted BiFeO₃for magnetic senor application

〇(D)Koomok Lee¹, Shigematsu Kei^1,2, Azuma Masaki^1,2 (1.MSL Tokyo Tech, 2.KISTEC)

2:00 PM - 2:15 PM

△ [20p-B103-3] Fabrication of BiFe_0.9Co_0.1O₃ nanodot array by using porous alumina mask anodized in malonic acid

〇(M2)Yasuhito Nagase¹, Takuma Itoh¹, Kei Shigematsu^1,2, Masaki Azuma^1,2 (1.MSL Tokyo Tech., 2.KISTEC)

2:15 PM - 2:30 PM

△ [20p-B103-4] Structural change of ferroelectric and ferromagnetic domains in (110) oriented multiferroic BiFe_0.9Co_0.1O₃ thin films by applying in-plane electric field

〇Takuma Itoh¹, Shigematsu Kei^1,2, Azuma Masaki^1,2 (1.MSL Tokyo Tech., 2.KISTEC)

2:30 PM - 2:45 PM

[20p-B103-5] Temperature dependence of photovoltaic effect in Mn-doped BiFeO₃ thin film along thickness direction

〇Seiji Nakashima¹, Ryoto Shirane¹, Hironori Fujisawa¹ (1.Univ. of hyogo)

3:00 PM - 3:15 PM

[20p-B103-6] [Young Scientist Presentation Award Speech] Examination of scaling down in (Al, Sc)N films for memory applications

〇Shinnosuke Yasuoka¹, Reika Ota¹, Kazuki Okamoto¹, Keisuke Ishihama¹, Takao Shimizu^2,3, Kuniyuki Kakushima¹, Masato Uehara⁴, Hiroshi Yamada⁴, Morito Akiyama⁴, Tomoyuki Koganezawa⁵, Loku Singgappulige Rosantha Kumara⁵, Okkyun Seo⁵, Osami Sakata⁵, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS, 3.JST PREST, 4.AIST, 5.JASRI)

3:15 PM - 3:30 PM

[20p-B103-7] Study on oxygen impurity in (Al,Sc)N thin films fabricated by sputtering technique

〇Kota Hasegawa^1,2, Takao Shimizu², Takeo Ohsawa², Isao Sakaguchi^1,2, Naoki Ohashi^1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)

3:30 PM - 3:45 PM

△ [20p-B103-8] The influence of heat treatment under H2 atmosphere on ferroelectricity of (Al, Sc)N thin films

〇(PC)Kazuki Okamoto¹, Shinnosuke Yasuoka¹, Reika Ota¹, Hiroshi Funakubo¹, Naoko Matsui², Toshikazu Irisawa², Koji Tsunekawa² (1.Tokyo Tech., 2.Canon ANELVA Corp.)

3:45 PM - 4:00 PM

[20p-B103-9] Evaluation of the effect of plasma oxidation on AlScN / Si by AR-HAXPES

〇Tomoya Tsutsumi¹, Gen Nakada¹, Yoshiharu Kirihara¹, Tatsuki Okazaki², Akira Yasui³, Kuniyuki Kakushima⁴, Yuichiro Mitani^1,2, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.Adv.Res.Lab., Tokyo City Univ., 3.JASRI, 4.Tokyo tech.)

4:00 PM - 4:15 PM

△ [20p-B103-10] Crystal structure and ferroelectricity of (Al_1-x-yGa_xSc_y)N thin films

〇(M2)Reika Ota¹, Shinnosuke Yasuoka¹, Kazuki Okamoto¹, Yoshihiro Ueoka,², Yoshiro Kususe², Masami Mesuda², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Tosoh Corp.)

4:30 PM - 4:45 PM

△ [20p-B103-11] k_t²-E Hysteresis curves of wurtzite ferroelectric films in GHz range

〇Naoki Ishii^1,2, Shiori Kobayashi^1,2, Takahiko Yanagitani^1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

4:45 PM - 5:00 PM

△ [20p-B103-12] Comparison of the k_t² extraction methods of piezoelectric film/substrate structure and self-standing film structure

〇Ryo Seki^1,2, Shimizu Yuki^1,2, Yanagitani Takahiko^1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

5:00 PM - 5:15 PM

△ [20p-B103-13] Extensional mode k_t² and shear mode k´₃₅² exceeding 20% in Sc_0.4Al_0.6N thin films

〇Hiroki Uchida^1,2, Yuki Shimizu^1,2, Masashi Suzuki³, Shinji Takayanagi⁴, Takahiko Yanagitani^1,2,5,6 (1.Waseda Univ., 2.ZAIKEN, 3.Yamanashi Univ., 4.Doshisya Univ., 5.JST-CREST, 6.JST-FOREST)

5:15 PM - 5:30 PM

△ [20p-B103-14] Polarization inversion ScAlN thin film with Bragg reflector
for the purpose of improving power durability

〇(M1)Saneyuki Shibata^1,2, Takahiko Yanagitani^1,2,3,4 (1.Waseda. Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

5:30 PM - 5:45 PM

△ [20p-B103-15] Quasi-shear mode resonance characteristics of c-axis 10° tilted epitaxial ZnO thin film

〇Hiroki Kishi^1,2, Takahiko Yanagitani^1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

6:00 PM - 6:15 PM

△ [20p-B103-16] Ultrasonic resonance characteristics of quasi shear mode in the giga-hertz range of
(10-12) LiNbO₃ epitaxial thin film

〇Shinya Kudo^1,2, Takahiko Yangitani^1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

6:15 PM - 6:30 PM

△ [20p-B103-17] 【Highlighted Presentation】Field Modulation Imaging of Domain Structures and In Situ Observation of Polarization Switching in Plastic/Ferroelectrics

〇(M1)Itsuki Miyamoto¹, Satoshi Matsuoka¹, Jun Harada², Jun'ya Tsutsumi³, Shunto Arai¹, Satoru Inoue¹, Tatsuo Hasegawa¹ (1.U. Tokyo, 2.Hokkaido Univ., 3.AIST)

6:30 PM - 6:45 PM

△ [20p-B103-18] Polarization control of MgZnO piezoelectric thin films for polarization-inverted multilayer devices

〇Yohkoh Shimano^1,2, Shinji Takayanagi³, Takahiko Yanagitani^1,2,4,5 (1.Waseda Univ., 2.ZAIKEN, 3.Doshisha Univ., 4.JST-CREST, 5.JST-FOREST)

6:45 PM - 7:00 PM

△ [20p-B103-19] GHz ultrasonic excitation in (100) AgNbO₃ epitaxial thin film

〇Kohei Ekida^1,2, Ken Omori^1,2, Shinya Kudo^1,2, Takahiko Yanagitani^1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

Poster presentation

[21p-P15-1~6] 6.1 Ferroelectric thin films

Wed. Sep 21, 2022 4:00 PM - 6:00 PM P15 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

4:00 PM - 6:00 PM

[21p-P15-1] Reliability improvement of Y:HfO₂ capacitors by rare-earth oxides capping

〇Kazuto Mizutani¹, Takuya Hoshii¹, Takamasa Kawanago², Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech School of Eng., 2.Tokyo Tech FIRST)

4:00 PM - 6:00 PM

[21p-P15-2] Effect of sputtering conditions on lattice distortion and electrical characteristics
of Al_1-xSc_xN thin films

〇Kohei Miyaji¹, Takeshi Yoshimura¹, Takuto Hagiwara¹, Norifumi Fujimura¹ (1.Osaka Met. Univ.)

4:00 PM - 6:00 PM

[21p-P15-3] Crystallization process of ALD deposited Hf_xZr_1-xO₂ thin films on Ga₂O₃ substrate.

〇Keigo Naito¹, Koichi Yamaguchi², Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Met. Univ., 2.Osaka Pref. Univ.)

4:00 PM - 6:00 PM

[21p-P15-4] Investigation of ultrasonic sensing by P(VDF-TrFE) Thin Films

〇Kazuki Hiratsuka¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Met Univ.)

4:00 PM - 6:00 PM

[21p-P15-5] Effect of Sc Concentration and Temperature on the Ferroelectricity of Sc-alloyed GaN Thin Films

〇Masato Uehara¹, Ryoichi Mizutani², Shinnosuke Yasuoka², Takao Shimizu^3,4, Hiroshi Yamada¹, Morito Akiyama¹, Hiroshi Funakubo² (1.AIST, 2.Tokyo Tech., 3.NIMS, 4.PRESTO)

4:00 PM - 6:00 PM

[21p-P15-6] Microwave-assisted hydrothermal deposition of (K,Na)NbO3 films with different crystal orientation

〇Toshikuni Sakai¹, Yukie Yokota¹, Hiroshi Uchida¹ (1.Sophia Univ.)

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[20a-B103-1~12] 6.1 Ferroelectric thin films

▲ [20a-B103-1] Dielectric Properties of BaxSr1−xTiO3 (x = 0.5) Epilayer Transferred on PET Substrate

△ [20a-B103-2] Peeling off Epitaxial Pb(Zr,Ti)O3 Films on SrTiO3 (001) Substrates using Sacrificial Water-soluble Layers

▼ [20a-B103-3] Enhanced extrinsic contribution in the piezoelectric response of epitaxial (K, Na)NbO3 films

△ [20a-B103-5] Zr/Ti ratio dependance of mechanical Q factor of Pb(Zrx,Ti1-x)O3 epitaxial thin films

[20p-B103-1~19] 6.1 Ferroelectric thin films

△ [20p-B103-3] Fabrication of BiFe0.9Co0.1O3 nanodot array by using porous alumina mask anodized in malonic acid

△ [20p-B103-4] Structural change of ferroelectric and ferromagnetic domains in (110) oriented multiferroic BiFe0.9Co0.1O3 thin films by applying in-plane electric field

△ [20p-B103-8] The influence of heat treatment under H2 atmosphere on ferroelectricity of (Al, Sc)N thin films

△ [20p-B103-10] Crystal structure and ferroelectricity of (Al1-x-yGaxScy)N thin films

△ [20p-B103-11] kt2-E Hysteresis curves of wurtzite ferroelectric films in GHz range

△ [20p-B103-12] Comparison of the kt2 extraction methods of piezoelectric film/substrate structure and self-standing film structure

△ [20p-B103-13] Extensional mode kt2 and shear mode k´352 exceeding 20% in Sc0.4Al0.6N thin films

△ [20p-B103-14] Polarization inversion ScAlN thin film with Bragg reflectorfor the purpose of improving power durability

△ [20p-B103-15] Quasi-shear mode resonance characteristics of c-axis 10° tilted epitaxial ZnO thin film

△ [20p-B103-16] Ultrasonic resonance characteristics of quasi shear mode in the giga-hertz range of(10-12) LiNbO3 epitaxial thin film

△ [20p-B103-17] 【Highlighted Presentation】Field Modulation Imaging of Domain Structures and In Situ Observation of Polarization Switching in Plastic/Ferroelectrics

△ [20p-B103-18] Polarization control of MgZnO piezoelectric thin films for polarization-inverted multilayer devices

△ [20p-B103-19] GHz ultrasonic excitation in (100) AgNbO3 epitaxial thin film

[21p-P15-1~6] 6.1 Ferroelectric thin films

Authenticate

▲ [20a-B103-1] Dielectric Properties of Ba_xSr₁₋_xTiO₃ (x = 0.5) Epilayer Transferred on PET Substrate

△ [20a-B103-2] Peeling off Epitaxial Pb(Zr,Ti)O₃ Films on SrTiO₃ (001) Substrates using Sacrificial Water-soluble Layers

▼ [20a-B103-3] Enhanced extrinsic contribution in the piezoelectric response of epitaxial (K, Na)NbO₃ films

△ [20a-B103-5] Zr/Ti ratio dependance of mechanical Q factor of Pb(Zr_x,Ti_1-x)O₃ epitaxial thin films

△ [20p-B103-3] Fabrication of BiFe_0.9Co_0.1O₃ nanodot array by using porous alumina mask anodized in malonic acid

△ [20p-B103-4] Structural change of ferroelectric and ferromagnetic domains in (110) oriented multiferroic BiFe_0.9Co_0.1O₃ thin films by applying in-plane electric field

△ [20p-B103-10] Crystal structure and ferroelectricity of (Al_1-x-yGa_xSc_y)N thin films

△ [20p-B103-11] k_t²-E Hysteresis curves of wurtzite ferroelectric films in GHz range

△ [20p-B103-12] Comparison of the k_t² extraction methods of piezoelectric film/substrate structure and self-standing film structure

△ [20p-B103-13] Extensional mode k_t² and shear mode k´₃₅² exceeding 20% in Sc_0.4Al_0.6N thin films

△ [20p-B103-14] Polarization inversion ScAlN thin film with Bragg reflector
for the purpose of improving power durability

△ [20p-B103-16] Ultrasonic resonance characteristics of quasi shear mode in the giga-hertz range of
(10-12) LiNbO₃ epitaxial thin film

△ [20p-B103-19] GHz ultrasonic excitation in (100) AgNbO₃ epitaxial thin film