[A-6-1] Improvement of Current Injection of Porous Silicon

Li-Hong Laih, Yen-Ann Chen, Nai-Yuan Liang, Wen-Chin Tsay, Mao-Nan Chang, Jyh-Wong Hong (1.Department of Electrical Engineering, National Central University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] A New Method for Measurement of Micro Defects near the Surface of Si Wafers--Optical Shallow Defect Analyzer (OSDA)--

Kazuo Takeda, Hidetsugu Ishida, Atsushi Hiraiwa (1.Central Research Lab., Hitachi, Ltd., 2.Semiconductor & Integrated Circuit Division, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-6-3] A New Technique for Quantitative Analysis of Metallic Contamination inside Deep-Submicron-Diameter Holes

H. Aoki, S. Yamasaki, N. Aoto (1.ULSI Device Development Laboratories, NEC Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV

Atsushi ANDO, Kunihiro SAKAMOTO, Kazushi MIKI, Kazuhiko MATSUMOTO, Tunenori SAKAMOTO (1.Electrotechnical Laboratory (ETL))

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-6-5] Atomic Step Morphology of Epitaxially Grown and H2 Annealed Si Surface

Yasuo KUNII, Masao NAGASE (1.NTT LSI Labs., Nippon Telegraph and Telephone Co.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-6-6] The Increase of the Native Oxide Thickness of H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere

T. Itoga, H. Kojima, J. Yugami, M. Ohkura (1.Central Research Laboratory, Hitachi Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-6-7] Native Oxide Growing Behavior on Si Crystal Structure and Resistivity

Katsuyuki SEKINE, Geun-Min CHOI, Mizuho MORITA, Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.IV-1] Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures

M. Asada, M. Watanabe, W. Saitoh, K. Mori, Y. Kohno (1.Department of Electrical and Electronic Engineering, 2.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.IV-2] Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of Nitridation

Takeshi YAMAMOTO, Michiharu TABE (1.Research Institute of Electronics, Shizuoka University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.IV-3] Resonant Tunneling through SiO2/Si Quantum Dot/SiO2 Double Barrier Structures

Masatoshi FUKUDA, Kazuyuki NAKAGAWA, Seiichi MIYAZAKI, Masataka HIROSE (1.Department of Electrical Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF Download