n-SiC Junctions by Surface Activated Bonding

^○N. Shigekawa¹, J. Liang¹, M. Shingo², M. Arai³, K. Shiojima² (1.Osaka City Univ., 2.Univ. of Fukui, 3.New Japan Radio Co., Ltd.(Japan))

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[PS-14-13] Special Features in Stress Degradation of SiC-MOSFETs Observed in I-V Characteristics

^○E. Murakami¹, K. Oda¹, T. Takeshita¹ (1.Kyushu Sangyo Univ.(Japan))

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[PS-14-14] Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave Plasma CVD

^○T. Suto¹, J. Yaita^1,2, T. Iwasaki^1,2,3, M. Natal⁴, S. E. Saddow⁴, M. Hatano^1,2,3 (1.Tokyo Tech, 2.JST-CREST, 3.JST-ALCA, 4.Univ. of South Florida(Japan))

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[PS-14-15] Trench-channel MOSFET using C-H Diamond Surface

^○T. Saito¹, M. Kobayashi¹, T. Yamada¹, D. Xu¹, Y. Kitabayashi¹, D. Matsumura¹, M. Inaba¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

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[PS-14-16] Solution Growth of AlN Single Crystal on Sapphire using Multi-Component Solvent Designed by Thermodynamic Calculation

^○S. Harada¹, M. Nagaya¹, S. Watanabe¹, M. Chen¹, Y. Takeuchi¹, K. Aoyagi¹, M. Tagawa¹, T. Ujihara¹ (1.Nagoya Univ.(Japan))

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[PS-14-17L] A 150 A SiC VMOSFET with 6 x 6 mm² Chip Size on a 150 mm C-face in-house Epitaxial Wafer

^○Y. Saitoh¹, H. Itoh¹, K. Wada¹, M. Sakai¹, T. Horii¹, K. Hiratsuka¹, S. Tanaka¹, Y. Mikamura¹ (1.Sumitomo Electric Industries, Ltd.(Japan))

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[PS-14-18L] Investigation of Conventional Bipolar Logic Technologies in 4H-SiC for Harsh Environment Applications

^○H. Elgabra¹, A. Siddiqui¹, S. Singh¹ (1.Khalifa Univ. of Sci., Tech. & Res.(UAE))

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[PS-14-19L] Investigation of Deep Levels in Diamond Based Radiation Detector by Transient Charge Spectroscopy with Focused Heavy Ion Microbeam

^○Y. Ando^{1, 2}, Y. Kambayashi^{1, 2}, W. Kada¹, S. Onoda², T. Makino², S. Sato², H. Umezawa³, Y. Mokuno³, S. Shikata⁴, O. Hanaizumi¹, T. Kamiya², T. Ohshima² (1.Gunma Univ., 2.JAEA, 3.AIST, 4.Kwansei Gakuin Univ.(Japan))

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[PS-15-1] Exciton and Bandgap Energies of Hybrid Perovskite CH₃NH₃PbI₃

Y. Nakamura¹, J. Sano¹, T. Matsushita^1,3, Y. Kiyota², Y. Udagawa², H. Kunugita^2,3, K. Ema^2,3, ^○T. Kondo^1,3,4 (1.Univ. of Tokyo, 2.Sophia Univ., 3.ALCA, 4.RCAST, Univ. of Tokyo(Japan))

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[PS-15-2] Optical Pumped Lasing in Solution Proccessed Perovskite Semiconducting Materials: Self Assembled Microdisk Lasing

^○F. Sasaki¹, H. Mochizuki¹, Y. Zhou¹, Y. Sonoda¹, R. Azumi¹ (1.AIST(Japan))

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