Poster presentation

[10a-PA3-1~10] 6.1 Ferroelectric thin films

Sun. Mar 10, 2019 9:30 AM - 11:30 AM PA3 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[10a-PA3-1] Growth of PZT epitaxial films on Si substrates using sputtering method

〇Mikio Murase¹, Kyohei Izumi¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

9:30 AM - 11:30 AM

[10a-PA3-2] Piezoelectric characterization of P(VDF-TrFE) films by direct piezoelectric response microscopy

〇Iduru Kanagawa¹, Yuji Matsushita¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

9:30 AM - 11:30 AM

[10a-PA3-3] Gas sensing using the change of Schottky barrier height

〇(B)Kodai Kashihara¹, Julien Schneider², Norihiro Oshime⁴, Jun Kano³ (1.Dep. of Appl. Chem. Bio., Okayama Univ., 2.INPT, 3.Grad. Sch. of Sci. Tech., Okayama Univ., 4.AIST)

9:30 AM - 11:30 AM

▼ [10a-PA3-4] Improvement of BaTa₂O₆ Thin Films for TFT Gate Insulator Applications

〇Son Tien Bui¹, Kenshin Narisawa², Cuong Duc Pham¹, Kiyoshi Uchiyama² (1.Hanoi University of Industry, 2.National Institute of Technology, Tsuruoka College)

9:30 AM - 11:30 AM

[10a-PA3-5] Fabrication of BaTiO₃ film by reactive sputtering method

〇Ao Makino¹, Masamichi Nishide², Ken Nishida¹ (1.Natinal Defense Academy, 2.Leading Technology Lab)

9:30 AM - 11:30 AM

[10a-PA3-6] Lattice mismatch effect on biaxial strain exerted on epitaxially-grown BiFeO₃

〇Hiroshi Naganuma⁵, In-Tae Bae^1,2, Sintaro Yasui³, Mitsuru Ito³, Takahisa Shiraishi⁴, Takanori Kiguchi⁴, Tomohiro Ichinose⁵ (1.S3IP, State Univ. NY, 2.Dep.Phys. State Univ. NY, 3.LMS TIT, 4.IMR Tohoku Univ, 5.Tohoku Univ)

9:30 AM - 11:30 AM

[10a-PA3-7] Electrical characteristic of ZnO-FET with piezoelectric polymer film P(VDF-TrFE) for gate insulator evaluated before and after heat treatment of P(VDF-TrFE) film

〇Takuya Okayama¹, Shusaku Matsumoto¹, Akio Furukawa¹ (1.Tokyo Univ.of Science)

9:30 AM - 11:30 AM

[10a-PA3-8] Nanopore-derived Strain As a Tool of Strain Engineering

〇Norihiro Suzuki¹ (1.RIST, TUS)

9:30 AM - 11:30 AM

[10a-PA3-9] Local Structure Analysis of a Mn-doped BiFeO₃ The Film by a X-ray Fluorescence Holography

〇Yakumo Fuchiwaki¹, Seiji Nakashima¹, Hironori Fujisawa¹, Yuta Kurokawa¹, Naohisa Happo², Koichi Hayashi³, Koji Kimura³, Yuta Yamamoto³, Ryohei Matsumoto³ (1.Hyogo Univ., 2.Hiroshima City Univ., 3.Nagoya Institute.)

9:30 AM - 11:30 AM

[10a-PA3-10] Investigation of Residual Proton in Substrate of Ferroelectric Film Deposition

〇Masaki Yamaguchi^1,2, Yoichiro Masuda³, Misa Yamasaki¹, Jun Hirade¹ (1.Shibaura Inst. of Tech., 2.RCGI, Shibaura Inst. of Tech., 3.Hachinohe Inst. of Tech.)

Oral presentation

[11a-W351-1~11] 6.1 Ferroelectric thin films

Mon. Mar 11, 2019 9:00 AM - 12:00 PM W351 (W351)

Hironori Fujisawa(Univ. of Hyogo), Tomoaki Yamada(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-W351-1] Preparation of orientation controlled HfO₂-based ferroelectric thick film by puttering method and their electrical properties

〇(P)Reijiro Shimura¹, Takanori Mimura¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo Tech. SMCT)

9:15 AM - 9:30 AM

[11a-W351-2] Crystal growth of HfO₂ films on n⁺-Si (100) substrates by mist chemical vapor deposition and evaluation of its electrical characteristics

〇(D)Daisuke Tahara¹, Hiroyuki Nishinaka¹, Minoru Noda¹, Shota Sato², Toshiyuki Kawaharamura², Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech., 2.Kochi Univ. Tech.)

9:30 AM - 9:45 AM

△ [11a-W351-3] Fabrication of ferroelectric (Hf,Ce)O₂ thin films and their crystal structure analysis

〇Takahisa Shiraishi¹, Sujin Choi¹, Takao Shimizu², Takanori Kiguchi¹, Hiroshi Funakubo², Toyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

9:45 AM - 10:00 AM

△ [11a-W351-4] Preparation of Y, Zr-doped HfO₂thin film by PLD method and their characterization.

〇(M1C)Yuuki Tasiro¹, Takanori Mimura¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo Tech.)

10:00 AM - 10:15 AM

[11a-W351-5] Doping effect on lead-free (K, Na)NbO₃ thin films

〇Geng Tan¹, Takuya Fujita¹, Shintaro Nishioka¹, Isaku Kanno¹ (1.Kobe Univ.)

10:15 AM - 10:30 AM

▼ [11a-W351-6] 【Highlight】Theoretical analysis of the influence of aspect ratio and density of nanorod arrays for piezoelectric energy harvesting

〇(D)Jundong Song¹, Tomoaki Yamada^1,2, Masahito Yoshino¹, Takanori Nagasaki¹ (1.Nagoya Univ., 2.PRESTO)

10:45 AM - 11:00 AM

△ [11a-W351-7] Ferroelectricity and Interface structure in polar magnet h-ScFeO₃ film

〇Yousuke Hamasaki¹, Shintaro Yasui², Takahisa Shiraishi³, Akihiro Akama³, Takenori Kiguchi³, Tomoyasu Taniyama², Mitsuru Itoh² (1.National Defense Academy, 2.Tokyo Tech, 3.Tohoku Univ)

11:00 AM - 11:15 AM

△ [11a-W351-8] Ferroelectric characteristics in ultra-thin PbTiO₃ film measured by electric double layer

〇Ryutaro Nishino¹, Takahiro Fujita¹, Fumitaka Kagawa^1,2, Masashi Kawasaki^1,2 (1.The Univ. of Tokyo, 2.RIKEN CEMS)

11:15 AM - 11:30 AM

[11a-W351-9] Dielectric Relaxation Measurement in Polyvinylidene Difluoride Using Electrostatic Force Microscopy with Dual Bias Modulation

〇Yoshiomi Hiranaga¹, Yasuo Cho¹ (1.RIEC, Tohoku Univ.)

11:30 AM - 11:45 AM

[11a-W351-10] High-Resolution Observaiton of Ferroelectric Domains Using Ultra Sharp Probes

〇Tomotaka Ishida¹, Yoshiomi Hiranaga¹, Yasuo Cho¹ (1.RIEC.Tohoku Univ.)

11:45 AM - 12:00 PM

[11a-W351-11] [Young Scientist Presentation Award Speech] Improvements of Efficiency and Output Power of Piezoelectric MEMS Vibration Energy Harvester using Sputtered BiFeO₃ Film

〇Masaaki Aramaki¹, Takeshi Yoshimura¹, Shuichi Murakami², Kazuo Satoh², Norifumi Fujimura¹ (1.Osaka Pref. Univ., 2.ORIST)

Oral presentation

[11p-W351-1~14] 6.1 Ferroelectric thin films

Mon. Mar 11, 2019 1:00 PM - 5:00 PM W351 (W351)

Yoshiomi Hiranaga(Tohoku Univ.), Takashi Eshita(Wakayama Univ.), Takanori Kiguchi(東北大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

[11p-W351-1] Microstructure of PZT Epitaxial Thin Films around Morphotropic Phase Boundary

〇Takanori Kiguchi¹, Takumi Shimizu¹, Takahisa Shiraishi¹, Toyohiko J. Konno¹ (1.Tohoku Univ.)

1:15 PM - 1:30 PM

△ [11p-W351-2] X-ray diffraction study under electric field on PZT films near morphotropic phase boundary

〇(M1)Hidehisa Inoue¹, Daichi Ichinose¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo Tech.)

1:30 PM - 1:45 PM

△ [11p-W351-3] MPB property of PZT epitaxial thin films fabricated by RF magnetron sputtering

〇(M1C)Ryuta Noda^1,2, Takahiro Shimidzu^1,2, Kiyotaka Wasa⁴, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST PRESTO, 4.Yokohama City Univ.)

1:45 PM - 2:00 PM

△ [11p-W351-4] Characterization of piezoelectric coefficient e_31,f for orientation-controlled (K,Na)NbO₃ films prepared by hydrothermal method.

〇(M2)Akinori Tateyama¹, Yoshiharu Ito¹, Yoshiko Nakamura¹, Takao Shimizu¹, Yuichiro Orino¹, Minoru Kurosawa¹, Hiroshi Uchida², Takahisa Shiraishi³, Takanori Kiguchi³, Toyohiko Konno³, Nobuhiro Kumada⁴, Yoshimura Takeshi⁵, Hiroshi Funakubo¹ (1.Tokyo tech., 2.Sophia univ., 3.Tohoku Univ., 4.Yamanashi Univ., 5.Osaka prefecture Univ.)

2:00 PM - 2:15 PM

[11p-W351-5] Ferroelectric capacitors with a controlled oxygen-vacancy distribution

〇Yuji Noguchi¹, Hiroki Matsuo², Masaru Miyayama¹ (1.Univ. Tokyo (SOE), 2.Univ. Tokyo (GSFS))

2:30 PM - 2:45 PM

▼ [11p-W351-6] Large Electrocaloric Effect in Al_xFe_2-xO₃ Epitaxial Thin Films

〇(P)BadariNarayana Aroor Rao¹, Shintaro Yasui¹, Tsukasa Katayama², Mitsuru Itoh¹ (1.Tokyo Inst. of Tech., 2.Univ. of Tokyo)

2:45 PM - 3:00 PM

[11p-W351-7] Influence of upper electrode on resistance switching of Nd-doped BFO ferroelectric films

〇Takuya Enami¹, Shinnosuke Kaneko¹, Yu Koma¹, Akiharu Morimoto² (1.Kanazawa Grad. Sch., 2.Kanazawa Univ.)

3:00 PM - 3:15 PM

[11p-W351-8] Oxygen Vacancy Defects of BiFeO₃ with Plasma Process and Electrical Properties

〇Fuminobu Imaizumi¹, Rikuto Nakada¹ (1.NIT, Oyama College)

3:15 PM - 3:30 PM

[11p-W351-9] Epitaxial growth of BiFeO3 films on Si substrates by sputtering method

〇Naoki Okamoto¹, Kyohei Izumi¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Graduate School of Eng.,Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[11p-W351-10] Preparation of BiFeO₃Thin Films on Dotted-patterned SrTiO₃(001) Surface

〇Satoshi Kimura¹, Yuta Kurokawa¹, Seiji Nakashima¹, Hironori Fujisawa¹ (1.University of Hyogo)

4:00 PM - 4:15 PM

△ [11p-W351-11] Influence of SrTiO₃/TiO₂ epitaxial buffer layer on electrical and optical properties in (Ba, Sr)TiO₃ thin films on MgO substrates

〇(DC)Shinya Kondo¹, Tomoaki Yamada¹, Masahito Yoshino¹, Takanori Nagasaki¹ (1.Nagoya Univ.)

4:15 PM - 4:30 PM

△ [11p-W351-12] Effects of polarity and pyroelectricity of LiNbO₃ on electrical property control of graphene

〇Yudai Yasuhara^1,2, Toyohiro Chikyow², Atsushi Ogura¹, Takahiro Nagata² (1.Meiji Univ., 2.NIMS)

4:30 PM - 4:45 PM

[11p-W351-13] Application of P(VDF-TrFE) thin films to solid-state heat pump

〇Yuji Matsushita¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

4:45 PM - 5:00 PM

△ [11p-W351-14] Time-resolved Simulation of the Negative Capacitance emerging at the Ferroelectric/Semiconductor Hetero-Junction

〇Kenshi Takada¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[10a-PA3-1~10] 6.1 Ferroelectric thin films

▼ [10a-PA3-4] Improvement of BaTa2O6 Thin Films for TFT Gate Insulator Applications

[11a-W351-1~11] 6.1 Ferroelectric thin films

△ [11a-W351-3] Fabrication of ferroelectric (Hf,Ce)O2 thin films and their crystal structure analysis

△ [11a-W351-4] Preparation of Y, Zr-doped HfO2 thin film by PLD method and their characterization.

▼ [11a-W351-6] 【Highlight】Theoretical analysis of the influence of aspect ratio and density of nanorod arrays for piezoelectric energy harvesting

△ [11a-W351-7] Ferroelectricity and Interface structure in polar magnet h-ScFeO3 film

△ [11a-W351-8] Ferroelectric characteristics in ultra-thin PbTiO3 film measured by electric double layer

[11p-W351-1~14] 6.1 Ferroelectric thin films

△ [11p-W351-2] X-ray diffraction study under electric field on PZT films near morphotropic phase boundary

△ [11p-W351-3] MPB property of PZT epitaxial thin films fabricated by RF magnetron sputtering

△ [11p-W351-4] Characterization of piezoelectric coefficient e31,f for orientation-controlled (K,Na)NbO3 films prepared by hydrothermal method.

▼ [11p-W351-6] Large Electrocaloric Effect in AlxFe2-xO3 Epitaxial Thin Films

△ [11p-W351-11] Influence of SrTiO3/TiO2 epitaxial buffer layer on electrical and optical properties in (Ba, Sr)TiO3 thin films on MgO substrates

△ [11p-W351-12] Effects of polarity and pyroelectricity of LiNbO3 on electrical property control of graphene

△ [11p-W351-14] Time-resolved Simulation of the Negative Capacitance emerging at the Ferroelectric/Semiconductor Hetero-Junction

Authentication

▼ [10a-PA3-4] Improvement of BaTa₂O₆ Thin Films for TFT Gate Insulator Applications

△ [11a-W351-3] Fabrication of ferroelectric (Hf,Ce)O₂ thin films and their crystal structure analysis

△ [11a-W351-4] Preparation of Y, Zr-doped HfO₂thin film by PLD method and their characterization.

△ [11a-W351-7] Ferroelectricity and Interface structure in polar magnet h-ScFeO₃ film

△ [11a-W351-8] Ferroelectric characteristics in ultra-thin PbTiO₃ film measured by electric double layer

△ [11p-W351-4] Characterization of piezoelectric coefficient e_31,f for orientation-controlled (K,Na)NbO₃ films prepared by hydrothermal method.

▼ [11p-W351-6] Large Electrocaloric Effect in Al_xFe_2-xO₃ Epitaxial Thin Films

△ [11p-W351-11] Influence of SrTiO₃/TiO₂ epitaxial buffer layer on electrical and optical properties in (Ba, Sr)TiO₃ thin films on MgO substrates

△ [11p-W351-12] Effects of polarity and pyroelectricity of LiNbO₃ on electrical property control of graphene