Oral presentation

[17a-Z03-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Mar 17, 2021 9:00 AM - 11:45 AM Z03 (Z03)

Hisataka Hayashi(KIOXIA), Tomoko Ito(阪大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [17a-Z03-1] Admittance Analysis of Plasma-induced Defects in SiN Films Introduced by Plasma Exposure Using a Distributed Bulk-dielectric Trap Model

〇Tomohiro Kuyama^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

9:15 AM - 9:30 AM

△ [17a-Z03-2] Characterization of Plasma-Damaged Layers at the Bottom and Sidewall of Si Deep-RIE Holes Using Micro Photoreflectance Spectroscopy

〇Takashi Hamano^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

9:30 AM - 9:45 AM

[17a-Z03-3] Generation and annihilation of plasma-induced defects ~ quantitative evaluation by carrier lifetime~

〇Shota Nunomura¹, Isao Sakata¹, Takayoshi Tsutsumi², Masatu Hori² (1.AIST, 2.Nagoya Univ.)

9:45 AM - 10:00 AM

[17a-Z03-4] Si-site Selective Removal from SiGe using Hydrogen Plasma via Ab-initio Calculations

〇RYOKO SUGANO¹, YOHEI ISHII², MAKOTO MIURA³, KENICHI KUWAHARA³ (1.Hitachi R&D Group, 2.Hitachi HTA, 3.Hitachi HT)

10:00 AM - 10:15 AM

△ [17a-Z03-5] Behavior of active species in gas modulation cycle process using Ar/C₄F₈/SF

〇(M1)Taito Yoshie¹, Yasufumi Miyoshi², Takayoshi Tsutsumi¹, Katsuhisa Kugimiya², Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.Sony Semiconductor Solutions Corp.)

10:15 AM - 10:30 AM

[17a-Z03-6] Desorbed product measurements and analyses of the reaction mechanisms for atomic layer etching (ALE) of transition metals by beta-diketon exposure

〇Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

10:30 AM - 10:45 AM

▼ [17a-Z03-7] Effect of Hydrogen in the Plasma-Enhanced Atomic Layer Etching of Silicon Nitride: A Molecular Dynamics Study

〇(M2)Jomar Unico Tercero^1,2, Akiko Hirata³, Michiro Isobe², Masagana Fukasawa³, Magdaleno Vasquez, Jr.¹, Satoshi Hamaguchi² (1.UP Diliman, 2.Osaka Univ., 3.Sony Semicon. Corp.)

10:45 AM - 11:00 AM

▼ [17a-Z03-8] Surface reactions of fluorinated Y₂O₃ by H⁺and O⁺ ion irradiation

〇(M2)Hojun Kang¹, Tomoko Ito¹, Junghwan Um², Hikaru Kokura², Taekyun Kang², Sung-Il Cho², Hyunjung Park², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Memory Etch Technology Team, Samsung Electronics)

11:00 AM - 11:15 AM

[17a-Z03-9] Lateral Etching of Aluminum Thin Film Deposited on Glass Substrate using Atmospheric-Pressure Plasma Jet (II)

〇Iori Hirashima¹, Hiroshi Kuwahata¹ (1.Toukai Univ.)

11:15 AM - 11:45 AM

[17a-Z03-10] [INVITED] Development of the world's first mass production Al etcher and electrostatic chuck

〇Moritaka Nakamura¹ (1.MAMO)

Oral presentation

[18a-Z17-1~11] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z17 (Z17)

Kosuke Takenaka(Osaka Univ.), Keigo Takeda(Meijo Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[18a-Z17-1] Structural change of the polyimide plasma-polymer due to different plasma gases

〇Kohshi Taguchi¹, Ko Minoura¹, Motohiro Yamahara¹, Kazuyuki Noborio¹ (1.Sakigake semiconductor Co., Ltd.)

9:15 AM - 9:30 AM

[18a-Z17-2] Effects of the substrate and source position on the chemical bonding states of the film deposited with benzene plasma

〇Masanori Shinohara¹, Tatsuo Nakai¹, Ryo Sasamoto¹, Satoshi Tanaka², Takashi Matsumoto² (1.Fukuoka Univ., 2.TTS)

9:30 AM - 9:45 AM

[18a-Z17-3] Plasma diagnostics of carbon-HiPIMS for depositing DLC film (2)

〇Takayuki Ohta¹, Jo Matsushima¹, Akinori Oda², Hiroyuki Kousaka³ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

9:45 AM - 10:00 AM

[18a-Z17-4] Study on the atmospheric-pressure plasma synthesis of high hardness diamond-like carbon films

〇Ryota Nishimura¹, Hirotaka Mitamura¹, Hiroyuki Yoshiki¹, Hiroyuki Arafune¹ (1.Tsuruoka Kosen)

10:00 AM - 10:15 AM

▲ [18a-Z17-5] High-speed Deposition of Graphite-like Carbon Film by Microwave Surface-Wave Plasma

〇Hansin BAE¹, Kazuya Hikita¹, Haruka Suzuki^1,2, Kensuke Sasai², Hirotaka Toyoda^1,2,3 (1.Nagoya Univ., 2.cLPS, 3.NIFS)

10:30 AM - 10:45 AM

△ [18a-Z17-6] Synthesis property of diamond by water vapor added microwave hydrogen plasma induced chemical transport

〇Naoto Komatsu¹, Atsuhisa Togo¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

△ [18a-Z17-7] Characterization of the high-rate prepared fluorocarbon films by solid-source aided plasma chemical vapor deposition technique

〇Hiromichi Nakatsuka¹, Rei Tanaka¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

△ [18a-Z17-8] Creation of nanoporous silver surface by moderate-pressure hydrogen plasma

〇(M1)Takuro Sekido¹, Takuhiro Ando¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

11:15 AM - 11:30 AM

△ [18a-Z17-9] Characterization of optical property of
high-pressure hydrogen plasma-induced nanoporous silver surface

〇Takuhiro Ando¹, Takuro Sekido¹, Hiroaki Kakiuchi¹, Kiyoshi yasutake¹, Hiromasa Ohomi¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

△ [18a-Z17-10] Influence of gas pressure for oriented AlN film growth by magnetic mirror-type magnetron cathode

〇Yuuto Kawato¹, Taisei Motomura², Tatsuo Tabaru², Masato Uehara², Tetsuya Okuyama¹ (1.NIT Kurume College, 2.AIST)

11:45 AM - 12:00 PM

[18a-Z17-11] The Characteristics of SiO2 Thin Films Coated with HC-PECVD

〇Tsuyoshi Otani¹, Hidehiko Yoda² (1.AIOT, 2.Utsunomiya Univ.)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-Z03-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [17a-Z03-1] Admittance Analysis of Plasma-induced Defects in SiN Films Introduced by Plasma Exposure Using a Distributed Bulk-dielectric Trap Model

△ [17a-Z03-2] Characterization of Plasma-Damaged Layers at the Bottom and Sidewall of Si Deep-RIE Holes Using Micro Photoreflectance Spectroscopy

[17a-Z03-3] Generation and annihilation of plasma-induced defects ~ quantitative evaluation by carrier lifetime~

[17a-Z03-4] Si-site Selective Removal from SiGe using Hydrogen Plasma via Ab-initio Calculations

△ [17a-Z03-5] Behavior of active species in gas modulation cycle process using Ar/C₄F₈/SF

[17a-Z03-6] Desorbed product measurements and analyses of the reaction mechanisms for atomic layer etching (ALE) of transition metals by beta-diketon exposure

▼ [17a-Z03-7] Effect of Hydrogen in the Plasma-Enhanced Atomic Layer Etching of Silicon Nitride: A Molecular Dynamics Study

▼ [17a-Z03-8] Surface reactions of fluorinated Y₂O₃ by H⁺and O⁺ ion irradiation

[17a-Z03-9] Lateral Etching of Aluminum Thin Film Deposited on Glass Substrate using Atmospheric-Pressure Plasma Jet (II)

[17a-Z03-10] [INVITED] Development of the world's first mass production Al etcher and electrostatic chuck

[18a-Z17-1~11] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-Z17-1] Structural change of the polyimide plasma-polymer due to different plasma gases

[18a-Z17-2] Effects of the substrate and source position on the chemical bonding states of the film deposited with benzene plasma

[18a-Z17-3] Plasma diagnostics of carbon-HiPIMS for depositing DLC film (2)

[18a-Z17-4] Study on the atmospheric-pressure plasma synthesis of high hardness diamond-like carbon films

▲ [18a-Z17-5] High-speed Deposition of Graphite-like Carbon Film by Microwave Surface-Wave Plasma

△ [18a-Z17-6] Synthesis property of diamond by water vapor added microwave hydrogen plasma induced chemical transport

△ [18a-Z17-7] Characterization of the high-rate prepared fluorocarbon films by solid-source aided plasma chemical vapor deposition technique

△ [18a-Z17-8] Creation of nanoporous silver surface by moderate-pressure hydrogen plasma

△ [18a-Z17-9] Characterization of optical property of
high-pressure hydrogen plasma-induced nanoporous silver surface

△ [18a-Z17-10] Influence of gas pressure for oriented AlN film growth by magnetic mirror-type magnetron cathode

[18a-Z17-11] The Characteristics of SiO2 Thin Films Coated with HC-PECVD

Authenticate

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-Z03-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [17a-Z03-1] Admittance Analysis of Plasma-induced Defects in SiN Films Introduced by Plasma Exposure Using a Distributed Bulk-dielectric Trap Model

△ [17a-Z03-2] Characterization of Plasma-Damaged Layers at the Bottom and Sidewall of Si Deep-RIE Holes Using Micro Photoreflectance Spectroscopy

△ [17a-Z03-5] Behavior of active species in gas modulation cycle process using Ar/C4F8/SF

▼ [17a-Z03-7] Effect of Hydrogen in the Plasma-Enhanced Atomic Layer Etching of Silicon Nitride: A Molecular Dynamics Study

▼ [17a-Z03-8] Surface reactions of fluorinated Y2O3 by H+ and O+ ion irradiation

[18a-Z17-1~11] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▲ [18a-Z17-5] High-speed Deposition of Graphite-like Carbon Film by Microwave Surface-Wave Plasma

△ [18a-Z17-6] Synthesis property of diamond by water vapor added microwave hydrogen plasma induced chemical transport

△ [18a-Z17-7] Characterization of the high-rate prepared fluorocarbon films by solid-source aided plasma chemical vapor deposition technique

△ [18a-Z17-8] Creation of nanoporous silver surface by moderate-pressure hydrogen plasma

△ [18a-Z17-9] Characterization of optical property ofhigh-pressure hydrogen plasma-induced nanoporous silver surface

△ [18a-Z17-10] Influence of gas pressure for oriented AlN film growth by magnetic mirror-type magnetron cathode

Authenticate

△ [17a-Z03-5] Behavior of active species in gas modulation cycle process using Ar/C₄F₈/SF

▼ [17a-Z03-8] Surface reactions of fluorinated Y₂O₃ by H⁺and O⁺ ion irradiation

△ [18a-Z17-9] Characterization of optical property of
high-pressure hydrogen plasma-induced nanoporous silver surface