[PL-1] Start-Up Companies, University-Industry Relations, and Emerging High-Tech Markets: Implementing the New Innovation Systems of the 21st Century

Richard B. Dasher (1.Stanford University, US-Asia Technology Management Center <and> Center for Integrated Systems)

2002 International Conference on Solid State Devices and Materials |PDF Download

[PL-2] Message from the Desk of Automotive Electronics

Hironobu Ono (1.Toyota Motor Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[PL-3] Microelectronics meets Molecular and Neurobiology

Peter Fromherz (1.Department of Membrane and Neurophysics Max Planck Institute for Biochemistry)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] Strained Si- and SiGe-On-Insulator (Strained SOI and SGOI) MOSFETs as New Device Options for High Performance CMOS

Shin-ich Takagi (1.MIRAI-Project, Association of Super-Advanced Electronics Technology (ASET) Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Enhanced performance from SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10μm x 10μm Si Pillars

A. M. Waite, U. N. Straube, N. S. Lloyd, S. G. Croucher, Y. T. Tang, B. Rong, A. G. R. Evans, T. J. Grasby, M. Myronov, T. E. Whall, E. H. C. Parker, D. J. Norris, A. G. Cullis (1.University of Southampton, Dept. of Electronics and Computer Science, 2.University of Warwick, Dept of Physics, 3.University of Sheffield, Department of Electronic & Electrical Engineering)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Novel Strained-Si Substrate Technology for Transistor Performance Enhancement

Chun-Chieh Lin, Chao-Hsiung Wang, Chung-Hu Ge, Chien-Chao Huang, Tien-Chih Chang, Liang-Gi Yao, Shih-Chang Chen, Mong-Song Liang, Fu-Liang Yang, Yee-Chia Yeo, Chenming Hu (1.Taiwan Semiconductor Manufacturing Company, Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs

Yukihiro Kumagai, Hiroyuki Ohta, Hideo Miura, Fumitoshi Ito, Keiichi Maekawa, Akihiro Shimizu (1.Mechanical Engineering Research Laboratory, Hitachi, Ltd., 2.Semiconductor & Integrated Circuits Div., Hitachi, Ltd., 3.Hitachi ULSI Systems, Co.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Multi-Subband Effects on the Performance Limit of Nanoscale MOSFETs

Kenji Natori, Tomo Shimizu, Tsuyoshi Ikenobe (1.Institute of Applied Physics, University of Tsukuba)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Simulation of Intrinsic Fluctuations in Decanano MOSFETs: Present Status and Future Challenges

A. Asenov (1.Device Modelling Group: Department of Electronics and Electrical Engineering University of Glasgow)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Modeling and Analysis of Gate Line Edge Roughness Effect on CMOS Scaling Towards Deep Nanoscale Gate Length

Seong-Dong Kim, Sungkwon Hong, Jae-Kwan Park, Jason C. S. Woo (1.Department of Electrical Engineering, University of California)

2002 International Conference on Solid State Devices and Materials |PDF Download