[P-1-11] Electrical Stress-Induced Degradation of HfAlO and HfO₂ Films of Equal EOT

P. Samanta^1,2, Y. J. Lee³, C. L. Cheng⁴, M. Chan² (1.Vidyasagar College for Women, India, 2.Hong Kong Univ. of Sci. and Tech., China, 3.National Nano Device Labs., 4.National Formosa Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-12] Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack

J. Chen¹, T. Sekiguchi¹, N. Fukata¹, M. Takase¹, T. Chikyo¹, R. Hasunuma², K. Yamabe², M. Sato³, Y. Nara³, K. Yamada⁴ (1.NIMS, 2.Univ. of Tsukuba, 3.Selete, 4.Waseda Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-13] Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and its Impacts on Plasma-Induced Damage Analysis

A. Matsuda¹, Y. Nakakubo¹, Y. Ueda¹, H. Ohta¹, K. Eriguchi¹, K. Ono¹ (1.Kyoto Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-14] Optimization of the First Reaction in ALD and its Impact to Electrical Film Quality of High-k/Si Direct-contact Gate Stacks

Y. Morita¹, S. Migita¹, H. Ota¹ (1.MIRAI-NIRC, AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-15] Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs

K. T. Lee¹, C. Y. Kang², S. H. Hong¹, H. S. Choi¹, G. B. Choi¹, J. C. Kim¹, S. H. Song¹, R. H. Baek¹, M. S. Park¹, H. C. Sagong¹, S. H. Sakong³, S. W. Jung³, H. K. Park², H. S. Hwang⁴, B. H. Lee², Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech., Korea, 2.SEMATECH, USA, 3.NCNT, 4.GIST, Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-16] Low Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor in High Pressure

T. Futatsuki^1,2, T. Oe¹, H. Aoki², N. Komatsu², C. Kimura², T. Sugino² (1.Organo Corp., 2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-17] Thermal Stability of High-κ Dielectrics - A Nanocharacterization Perspective

Y. C. Ong¹, D. S. Ang¹, S. J. O'Shea², K. L. Pey¹, T. Kawanago⁴, S. J. Wang², C. H. Tung³, K. Kakushima⁴, H. Iwai⁴ (1.Nanyang Tech. Univ., 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore, 4.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-18] Negative Bias Temperature Instability (NBTI) of pMOSFETs with Novel Hf_xMo_yN_z Metal Gate Electrodes

H. K. Peng¹, C. S. Lai¹, K. M. Fan¹, S. J. Lin² (1.Chang Gung Univ., 2.Nanya Tech. Corp., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-19] Investigation of Schottky Diodes on Germanium using Mercury Probe

M. Koike¹, M. Koyama¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-20L] UV Raman Study of Cleavage Effects on Stress Distribution in Si STI Structure

T. Tada¹, V. Poborchii¹, T. Kanayama¹ (1.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download