[A-4-1] GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure

M. Fujimatsu¹, H. Saito¹, Y. Miyamoto¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Pnp AlGaN/InGaN Heterojunction Bipolar Light-Emitting Transistors with a Quantum Well in the Base

K. Kumakura¹, T. Makimoto¹, H. Yamamoto¹ (1.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes Using Low-Melting Point Alloy Bumps

J. Nakano¹, T. Shibata¹, T. Okatsu¹, M. Mori¹, K. Maezawa¹ (1.Univ. of Toyama , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Operating Principle and Integration of In-Plane Gate Logic Devices

Y. Komatsuzaki¹, K. Saba¹, K. Onomitsu², H. Yamaguchi², Y. Horikoshi¹ (1.Waseda Univ., 2.NTT BRL , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Zinc Oxide Thin-Film Transistors on Flexible Plastic Substrates and Glass Substrates Fabricated at Room Temperature

T. Higaki¹, Y. Kimura¹, T. Maemoto¹, S. Sasa¹, M. Inoue¹ (1.Osaka Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura¹, M. Tani¹, N. Hattori², N. Miyatake², M. Horita¹, Y. Ishikawa¹, Y. Uraoka^1,3 (1.NAIST, 2.Mitsui Eng. and Shipbuilding Co., Ltd., 3.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Effects of Excimer Laser annealing of Oxide Semiconductor Films

M. Fujii¹, R. Ishihara², T. Chen², J. Van der Cingel², M. R. T. Mofrad², M. Kasami³, K. Yano³, M. Horita^1,4, Y. Ishikawa^1,4, Y. Uraoka^1,4 (1.NAIST , Japan, 2.Delft University of Technology , The Netherlands, 3.Idemitsu Kosan Co., Ltd., 4.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer

H. W. Zan¹, C. C. Yeh², C. C. Tsai¹, H. F. Meng¹ (1.National Chiao Tung Univ., 2.E Ink Holdings Inc. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-5-5] The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors

H. Y. Huang¹, S. J. Wang¹, C. H. Wu², C. K. Chiang¹, Y. C. Huang¹, J. Y. Su¹ (1.National Cheng Kung Univ., 2.Chung Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] High Integrity SiO₂ Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi^1,3, T. Nomura¹, S. Kato¹, H. Ueda², A. Teramoto³, S. Sugawa³, T. Ohmi³ (1.Advanced Power Device Res. Association, 2.Tokyo Electron Tech. Development Inst. Inc., 3.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download