[M-4-1] A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

O.M.J. van `t Erve¹ (1.Naval Research Lab. (USA))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-4-2] Mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires

J. Ishihara¹、Y. Ohno²、H. Ohno^1,3 (1.RIEC, Tohoku Univ.、2.Univ. of Tsukuba、3.WPI-AIMR, Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-4-3] Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

K.R. Jeon^1,2、B.C. Min³、S.Y. Park⁴、K.D. Lee²、H.S. Song²、Y.H. Park³、Y.H. Jo⁴、S.C. Shin^2,5、H. Saito¹、S. Yuasa¹、R. Jansen¹ (1.AIST、2.KAIST、3.KIST、4.KBSI、5.DGIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-4-4] Effects of interface electric field on the magnetresitance in spin transistors

T. Tanamoto¹、M. Ishikawa¹、T. Inokuchi¹、H. Sugiyama¹、Y. Saito¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-5-1] Efficient spin injection in GaAs-based spin-LEDs through crystalline aluminum oxide layers

N. Nishizawa¹、H. Munekata¹ (1.Tokyo Inst. Of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-5-2] Marked difference in structural stability between Co₂FeSi/Si(111) and Co₂FeAl/Si(111) heterointerfaces in post-growth annealing conditions

S. Yamada¹、K. Tanikawa¹、S. Oki¹、M. Kawano¹、M. Miyao^1,2、K. Hamaya¹ (1.Kyushu Univ.、2.CREST-JST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-5-3] Co/Pt Multilayer Based Reference Layer in Magnetic Tunnel Junctions for Nonvolatile Spintronics VLSIs

H. Sato¹、S. Ikeda^1,2、S. Fukami¹、S. Ishikawa²、M. Yamanouchi^1,2、K. Mizunuma²、F. Matsukura^1,2,3、H. Ohno^1,2,3 (1.Center for Spintronics Integrated Systems, Tohoku Univ.、2.Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku Univ.、3.WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-5-4] Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Free Layer for Highly Sensitive Magnetic Sensor Devices

K. Fujiwara¹、D. Kato¹、M. Oogane¹、T. Nishikawa²、H. Naganuma¹、Y. Ando¹ (1.Tohoku Univ.、2.KONICA MINOLTA (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-5-5] Anti-ferromagnetic Exchange Coupling in L10-MnGa/Co Bilayer Films

R. Ranjbar^1,2、S. Mizukami¹、A. Sugihara¹、Q.L. Ma¹、S. Iihama²、Y. Ando²、T. Miyazaki¹ (1.WPI Advanced Inst., Univ. of Tohoku、2.Univ. of Tohoku (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-6-1] Electric field control of ferromagnetism in transition metals

D. Chiba¹ (1.The Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード