[J-2-4] Impact of PdO Gate Interlayer on the DC Performance of GaN/AlGaN High Electron Mobility Transistor

F.C Chu¹、A. Das¹、R.M Lin¹、H.W Chuang²、K.J Chang²、Y.T Gau² (1.Chang Gung Univ.、2.Chung Shan Inst. of Sci. and Tech. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-5] Demonstration of Enhancement-mode Operation in AlGaN/GaN MOS-HEMT on Si by utilizing ALD Al₂O₃ layer

J.J. Freedsman¹、T. Kubo¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-6] A Low Turn-On Voltage and High Breakdown Voltage AlGaN/GaN Dual Metal Schottky Barrier Diode

T.Y. Yang^1,2、T.F. Chang¹、T.Y. Huang²、C.W. Chiu²、H.D. Su²、K.C. Chang²、C.F. Huang¹ (1.National Tsing Hua Univ.、2.Richtek Tech. Corp. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-3-1] Scaling to 100nm Channel Length of Crystalline In-Ga-Zn-Oxide Thin Film Transistors with Extremely Low Off-State Current

Y. Kobayashi¹、S. Matsuda¹、D. Matsubayashi¹、H. Suzawa¹、M. Sakakura¹、K. Hanaoka¹、Y. Okazaki¹、T. Yamamoto¹、S. Hondo¹、T. Hamada¹、S. Sasagawa¹、M. Nagai¹、Y. Hata¹、T. Maruyama¹、Y. Yamamoto¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-3-2] Gate Oxide Thickness Dependence of Intrinsic Gain and Flicker Noise in InGaZnO Thin Film Transistors

T. Morooka¹、K. Fukase¹、S. Nakano²、S. Toriyama²、H. Momose¹、T. Ohguro¹ (1.Toshiba Corp. Semiconductor & Strorage Products Company、2.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-3-3] Fabrication and Characterization of High-Performance ZnO Thin-Film Transistors

R.J. Lyu¹、H.C. Lin^1,2、T.Y. Huang¹ (1.National Chiao Tung Univ.、2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-3-4] Suppression of Threshold Voltage Variation Due to Conduction Band Lowering Effect in Crystalline In-Ga-Zn-Oxide Thin Film Transistors

D. Matsubayashi¹、Y. Kobayashi¹、S. Matsuda¹、T. Obonai²、N. Ishihara¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.、2.Advanced Film Device Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-3-5L] InGaSb/AlSb high hole mobility FETs on Si Substrate

H.W. Huang¹、P.C. Chiu¹、H.C. Ho¹、Y.M. Hsin¹、J.I. Chyi¹ (1.National Central Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-4-1] Progress in SiC and GaN High Voltage Power Devices

T.P. Chow¹ (1.Rensselaer Poly. Inst. (USA))

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[J-4-2] Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs

M.K. Eo¹、H.S. Choi¹、S.Y. Jang²、W.S. Kim²、J.H. Shin²、T.H. Jang²、H.I. Kwon¹ (1.Univ. of Chung-Ang、2.System IC R&D Lab., LG Electronics (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード