[N-8-5L] Surface-Activated-Bonding Based InGaP-on-Si Double Junction Cells

N. Shigekawa^1,2、M. Morimoto¹、S. Nishida¹、J. Liang^1,2 (1.Osaka City Univ.、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-1] Atomically controlled diamond: homoepitaxy, doping, and surface structures

N. Tokuda^1,2,3、S. Yamasaki^2,3、T. Inokuma^1,3 (1.Kanazawa Univ.、2.AIST、3.JST, CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-2] Groundbreaking room-temperature mobility of 2D holes in a strained Ge quantum well heterostructure grown by Reduced Pressure Chemical Vapor Deposition

M. Myronov¹、C. Morrison¹、C. Casteleiro¹、J. Halpin¹、S. Rhead¹、J. Foronda¹、D.R. Leadley¹ (1.Univ. of Warwick (UK))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-3] An Alternative Technique for GeOI Fabrication

C.T. Chung¹、G.L. Luo²、C.W. Chen¹、C.H. Chien^1,2 (1.National Chiao-Tung Univ.、2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-4] Optimization of fabrication conditions of HfO₂/SiO₂/Si(100) and Y2O₃/SiO₂/Si(100) structures

Y. Toyoshima¹、S. Taniwaki¹、Y. Hotta^1,3、H. Yoshida^1,3、K. Arafune^1,3、A. Ogura^2,3、S. Sato^1,3 (1.Univ. of Hyogo、2.Univ. of Meiji、3.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-5] In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH₄ Supply by Optical Emission Spectroscopy of Ar Plasma

K. Ikemoto¹、Y. Nakamine¹、Y. Kawano¹、S. Oda¹ (1.Tokyo Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-6L] Fast fabricated the high quality Ge nanodot arrays on Si substrate

T.W. Liao¹、H.M. Chen¹、C.H. Kuan¹ (1.National Taiwan Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-1] Hybrid-Formation of Single-Crystalline Ge(Si, Sn)-on-Insulator Structures by Self-Organized Melting-Growth

M. Miyao¹、R. Matsumura¹、M. Kurosawa¹、K. Toko¹、T. Sadoh¹ (1.Kyushu Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-2] Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth

R. Matsumura¹、R. Kato¹、Y. Tojo¹、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-3] Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

R.R. Lieten^1,2、T. Maeda³、W. Jevasuwan³、H. Hattori³、N. Uchida³、S. Miura⁴、M. Tanaka⁴、J.W. Seo¹、J.P. Locquet¹ (1.KU Leuven、2.IMEC、3.National Inst. for Advanced Indus. Sci. and Tech.、4.Yokohama National Univ. (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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