[B-3-1] 3D dopant analysis in nano scale devices (FinFETs) by Atom Probe Tomography

A.K. Kambham^1,2、A. Kumar^1,2、W. Vandervorst^1,2 (1.Katholieke Univ. Leuven、2.IMEC (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey^1,2,3、L. Veyre¹、H. Fontaine²、V. Enyedi²、K. Yckache²、J. Guerrero²、N. Chevalier²、F. Martin²、J.P. Barnes²、F. Bertin²、C. Durand⁴、M. Berthe⁴、B. Grandidier⁴、C. Thieuleux¹、C. Coperet^1,5 (1.C2P2, CPE Lyon、2.CEA-LETI、3.Osaka Univ.、4.IEMN、5.ETH Zurich (France))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] Size and Stress Effects in Ultraviolet Raman Spectra of Few-Nanometer-Thick SOI Nanofilms and Single Nanowires for Future CMOS Devices

V.D. Poborchii¹、T. Tada¹、Y. Morita¹、S. Migita¹、T. Kanayama¹、P. Geshev² (1.National Institute of Advanced Industrial Science and Tech.、2.Inst. of Thermophysics of the Russian Academy of Sciences (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution

T. Suwa¹、K. Nagata²、H. Nohira³、K. Nakajima⁴、A. Teramoto¹、A. Ogura²、K. Kimura⁴、T. Muro⁵、T. Kinoshita⁵、S. Sugawa¹、T. Hattori¹、T. Ohmi¹ (1.Tohoku Univ.、2.Meiji Univ.、3.Tokyo City Univ.、4.Kyoto Univ.、5.JASRI (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Layer-by-Layer GeO₂ Formation in the Self-Limited Oxidation Regime of Ge

C.H. Lee^1,2、T. Nishimura^1,2、T. Tabata^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] Modified Deal-Grove model for the thermal oxidation of Ge and Al₂O₃ capped Ge

S.K. Wang¹、X.L. Wang¹、L. Han^1,2、W. Zhao¹、B. Sun¹、W.W. Wang.¹、C. Zhao¹、H.G. Liu¹ (1.Inst. of Microelectronics, Chinese Academy of Sciences、2.Southeast University (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Thermodynamic consideration and experimental demonstration for solving the problems of GeO₂ solubility in H₂O and GeO desorption from GeO₂/Ge

C. Lu^1,2、C.H. Lee^1,2、W.F. Zhang^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Charge neutrality level shift in the Bardeen limit of Fermi-level pinning at atomically flat Ge/metal interface

T. Nishimura^1,2、T. Nakamura¹、T. Yajima^1,2、K. Nagashil^1,2、A. Toriumi^1,2 (1.The Univ. of Tokyo、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate

T. Arahira¹、M. Fukudome¹、N. Taoka¹、W. Takeuchi¹、M. Sakashita¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization

Y. Yang¹、P. Guo¹、W. Wang¹、X. Gong¹、L. Wang¹、K.L. Low¹、G. Han¹、Y.C. Yeo¹ (1.National Univ. of Singapore (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

617件中(41 - 50)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
次へ »

▲