[A-5-3] A New 28nm HKMG CMOS Logic OTP Cell

W.Y. Hsiao¹、C.Y. Mei¹、W.C. Shen¹、Y.D. Chih²、Y.C. King¹、C.J. Lin¹ (1.National Tsing-Hua Univ.、2.Taiwan Semiconductor Manufacturing Company (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-1] Modeling of Transition Metal Oxide Based RRAM Devices

J.F. Kang¹、B. Gao¹、B. Chen¹、P. Huang¹、X.Y. Liu¹ (1.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-2] Conducting filament engineering by triple-layer RRAM for uniform resistive switching

D. Lee¹、J. Park¹、S. Park²、J. Woo¹、E. Cha¹、S. Lee¹、Y. Koo¹、K. Moon¹、J. Song¹、H. Hwang¹ (1.Pohang Univ. of Sci. and Tech.、2.Gwangju Inst. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-3] Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write

S.Y. Kim^1,2、J.M. Baek¹、D.J. Seo¹、J.K. Park¹、J.H. Chun¹、K.W. Kwon¹ (1.Sungkyunkwan Univ.、2.Memory Division, Samsung Electronics Corp. Ltd. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-4] Mb-Class Array Level Investigation of Program Verify Methods for AL_xO_y ReRAM

S.Y. Ning^1,2、T.O. Iwasaki¹、K. Takeuchi¹ (1.Chuo Univ.、2.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi^1,2、M.Y. Yang¹、S. Kato¹、M. Araidai³、K. Kamiya¹、T. Yamamoto¹、T. Ohyanagi⁴、N. Takaura⁴、M. Niwa⁵、B.M. Kope⁶、Y. Nishi⁶ (1.Univ. of Tsukuba、2.Nagoya Univ.、3.Univ. of Tsukuba、4.Low-power Electronics Association & Project、5.Tohoku Univ.、6.Stanford Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-2] A Novel Self-rectifying WSixOy Device in a Double-density Architecture for 3D ReRAM

D.Y. Lee¹、E.K. Lai^1,2、W.C. Chien¹、M.H. Lee¹、F.M. Lee¹、Y.C. Chen¹、S.F. Horng²、J. Gong²、Y.K. Huang¹、H.H. Hsu¹、Y.T. Huang¹、C.C. Yu¹、H.L. Lung¹、K.Y. Hsieh¹、C.Y. Lu¹ (1.Macronix Int'l Corp., Ltd.、2.National Tsing Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application

Y.M. Koo¹、Y.H. Choi¹、E.J. Cha¹、D.S. Lee¹、J.Y. Woo¹、J.H. Song¹、K.B. Moon¹、J.S. Park¹、S.H. Lee¹、H.S. Hwang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-4] Excellent Reliability and Switching Uniformity of RRAM by Optimizing SET/RESET Pulse Shape to Minimize Current Overshoot

J.H. Song¹、D.S. Lee¹、J.Y. Woo¹、Y.M. Koo¹、E.J. Cha¹、S.H. Lee¹、J.S. Park¹、K.B. Moon¹、H.S. Hwang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] Metal Oxide RRAM For Next Generation Mass Storage: 3D Vertical Architecture and Electrode/Oxide Interface Engineering

H.Y. Chen¹、S. Yu¹、B. Gao²、Y. Deng²、P. Huang²、H. Tian³、Z. Jiang¹、Y. Wu¹、T. Ren³、J.F. Kang²、H.S.P. Wong¹ (1.Stanford Univ.、2.Peking Univ.、3.Tsinghua Univ. (USA))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード