[PS-2-10L] Advanced TSV fabrication processes for future packaging.

Y. Morikawa¹、T. Sakuihsi¹、T. Murayama¹、A. Suzuki¹、M. Hatanaka¹、K. Suu¹ (1.ULVAC, Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-11L] Low stress C doped WN diffusion barrier for Cu interconnection

Y.T. Kim¹、Y.H. Kim¹ (1.Korea Inst. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-12L] Analysis of Printed Ag Electrode on a-InGaZnO

Y. Ueoka¹、T. Nishibayashi²、Y. Ishikawa¹、H. Yamazaki¹、Y. Osada¹、M. Horita¹、Y. Uraoka¹ (1.Nara Inst. of Sci. and Tech.、2.TOKYO ELECTRON LTD. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-1] Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO₂/TiN Gate Stack for High-k Last Integration

K.S. Yew¹、D.S. Ang¹、L.J. Tang²、J.S. Pan³ (1.Nanyang Tech. Univ.、2.Inst. of Microelectronics, A∗STAR、3.Institute of Materials Research and Eng., A∗STAR (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-2] Effects of Rutile TiO₂ Interlayer on HfO₂/Ge MOS Structure

K. Kobashi^1,2、T. Nagata²、T. Nabatame²、Y. Yamashita²、A. Ogura¹、T. Chikyow² (1.Meiji Univ.、2.NIMS (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-3] Effects of HfO₂ and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors

S.S. Naresh¹、N.R. Mohapatra¹、P.K. Duhan² (1.IIT-Gandhinagar、2.IIT-Bombay (India))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-4] Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

S.C. Tsai¹、S.L. Wu²、J.F. Chen¹、K.S. Tsai²、T.H. Kao¹、C.W. Yang³、C.G. Chen³、K.Y. Lo³、O.B. Cheng³、Y.K. Fang¹、S.J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-5] Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements

T.H. Kao¹、S.L. Wu²、K.S. Tsai²、Y.K. Fang¹、B.C. Wang¹、C.M. Lai³、C.W. Hsu³、Y.W. Chen³、O.B. Cheng³、S.J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-6] Analysis and Application of Temperature Dependent Characteristics of the Random Telegraph Noise on Contact RRAM

L.S. Chang¹、Y.C King¹、C.J Lin¹ (1.National Tsing-Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-7] The Trade-off between STI Stress and Gate Resistance in RF MOSFETs Design for High Frequency Performance and RF Noise

C.Y. Ku¹、K.L. Yeh¹、J.C. Guo¹ (1.National Chiao-Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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