[PS-6-15] Ultrahigh Sensitive Non-Resonant and Resonant Terahertz Detection by Asymmetric Dual-Grating Gate HEMTs

Y. Kurita¹、G. Ducournau²、D. Coquillat³、K. Kobayashi¹、A. Satou¹、Y.M. Meziani⁴、V.V. Popov⁵、W. Knap³、T. Suemitsu¹、T. Otsuji¹ (1.RIEC, Tohoku Univ.、2.IEMN、3.CNRS, Univ. Montpellier 2、4.Univ. Salamanca、5.Kotelnikov Inst. of Radio Eng. and Electronics (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-16] Microwave Performance of In_0.25Ga_0.75As MOSFET with an InGaP interfacial layer

H.D. Chang¹、G.M Liu¹、B. Sun¹、H.G Liu¹、X.L Zhou²、J.Q Pan² (1.Institute of Microelectronics Chinese Academy of Sciences、2.Institute of Semiconductor Chinese Academy of Sciences (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-17] Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs-HEMTs

Y. Nishio¹、T. Tange¹、N. Hirayama¹、T. Iida¹、Y. Takanashi¹ (1.Tokyo Univ. of Science (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-18] On the electrical characteristics of the atomic layer deposition Al₂O₃/In_0.53Ga_0.47As MOSCAPs with various annealing processes

Q.H Luc¹、E.Y Chang¹、H.D Trinh¹、H.Q Nguyen¹、B.T Tran¹、Y.C Lin¹、H.B Do¹ (1.Univ. of Chiao Tung (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-19] Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application

Y.J. Yoon¹、S. Cho²、J.H. Seo¹、E.S. Cho³、S.W. Kang¹、J.H. Bae¹、J.H. Lee¹、B.G Park⁴、J.S. Harris²、I.M. Kang¹ (1.Kyungpook National Univ.、2.Stanford Univ.、3.Gachon Univ.、4.Seoul National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-20] High Performance Solution-deposited InGaZnO Thin Film Transistors using Microwave Annealing and Ar/O₂ Plasma Treatment at Low Process Temperature

J.G. Gu¹、K.S. Kim¹、H.M. An²、W.J. Cho¹ (1.Kwangwoon Univ. of Korea、2.Osan College. of Korea (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-21] High-performance Single/Dual-layer Channel IGZO TFT Fabricated on Glass Substrates at Low-temperature

Y. Tian¹、D.D. Han¹、S.M. Zhang^1,2、F.Q. Huang^1,2、D.F. Shan^1,2、Y.Y. Cong¹、J. Cai^1,2、L.L. Wang^1,2、S.D. Zhang^1,2、X. Zhang¹、Y. Wang¹ (1.Peking Univ.、2.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-22] High performance and electrical characterization of write-once-read-many-times memory devices base on IGZO thin film with O₂ plasma treatment

P. Liu¹、T.P. Chen¹、Y.H. Zhao¹、Z. Liu²、X.D. Li¹、J.I. Wong¹ (1.Nanyang Technological Univ.、2.Guangdong University of Tech. (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-23] Improved Stability of ZnO Thin Film Transistor with Dual Gate Structure under Negative Bias Stress

H.J. Yun¹、Y.S. Kim²、Y.M. Kim¹、S.D. Yang¹、H.D. Lee¹、G.W. Lee¹ (1.National Univ. of Chungnam、2.National Nanofab Center (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-24] Effects of Composition on Electrical Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors Deposited Using Atmospheric Pressure Plasma Jet

C.H. Wu¹、K.M. Chang^2,3、H.Y. Hsu²、C.Y. Chen²、S.J. Wang⁴、I.J. Hsieh¹、M.C. Hsu¹、C.S. Chang¹ (1.Chung Hua Univ.、2.Chiao Tung Univ.、3.I-shou Univ.、4.Cheng Kung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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