[PS-6-25] The channel layer engineering using Al₂O₃ inter-layer in ZnO based TFTs

S.H. Kim¹、K.S. Jeong¹、H.J. Yun¹、S.D. Yang¹、Y.M. Kim¹、J.S. Kim¹、Y.U. Ko¹、J.U. An¹、H.D. Lee¹、G.W. Lee¹ (1.Chungnam National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-26] Implementation of Multi-threshold Voltage a-IGZO TFTs with Oxygen Plasma Treatment

X. He¹、L.Y. Wang¹、S.J. Li¹、M.S. Chan²、S.D. Zhang^1,3 (1.Peking Univ.、2.Hong Kong Univ. of Science and Tech.、3.Shenzhen Graduate School, Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-27] Solution-Processed Ca-doped InZnO Oxide Semiconductor for Thin Film Transistor Applications

D. Liu^1,2、Y. Wang²、Y.X. Yu²、X. Gong²、Y. Tian²、Y.R. Wang²、Z. Chen²、D.D. Han²、J.F. Kang² (1.Peking University Shenzhen Graduate School、2.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-28L] Normally-off AlGaN/GaN MIS-HFET using stacked NiO/Al₂O₃ Gate Structure Formed by Atomic Layer Deposition

Y. Yamada¹、A. Suzuki¹、N. Otsuka¹、D. Ueda¹ (1.Panasonic Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-29L] AlGaN/GaN HEMTs on Silicon with Hybrid Source-Drain for Source-Drain Scaling and Frequency Dispersion Suppression

C.W. Tsou¹、Y.W. Lian¹、J.C. Hung¹、Y.S. Lin¹、S.H. Hsu¹ (1.National Tsing Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-30L] Electrical Characteristic of AlGaN/GaN HEMTS with AlN Spacer Layer

N.M. Shrestha¹、Y. Li¹、E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-31L] Improved Breakdown Properties in Short Gate InP-based HEMTs with Novel Tri-Layer Channel Structure

A. El Moutaouakil¹、H. Sugiyama¹、H. Matsuzaki¹ (1.NTT Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-32L] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal

K. Moriguchi¹、T. Maemoto¹、K. Ogata¹、S. Sasa¹ (1.Osaka Institute of Technology (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-33L] GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology

M. Yokoyama¹、H. Yokoyama²、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.NTT Photonics Labs., NTT Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-7-1] Efficiency Improvement of GaN-Based LEDs with Double Nano-pattern

J.K. Huang¹、D.W. Lin¹、C.Y. Lee¹、H.W. Huang¹、P.T. Lee¹、H.C. Kuo¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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