[J-6-4] GaN Schottky Barrier Diodes with TiN Electrode for High Efficiency Microwave Power Rectification

A. Kishi¹、Y. Itai¹、T. Shiraishi¹、K. Fukui¹、Q. Liu¹、Y. Ohno²、L. Li¹、J. Ao¹ (1.The Univ. of Tokushima、2.e-Device Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-5] GaN/AlN Resonant Tunneling Diode with High Peak-to-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy

M. Nagase¹、T. Takahashi¹、M. Shimizu¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-6] Temperature-dependent Characteristics of AlGaN-GaN-on-Si Heterojunction Field Effect Transistors (HFETs) under reverse gate bias stress

D.M. Keum¹、S.H. Choi¹、Y.J. Kang¹、J.G. Lee¹、H.Y. Cha¹、H.T. Kim¹ (1.Univ. of Hongik (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-1] High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs

D.H. Kim^1,2、T.W. Kim¹、R. Hill¹、C.Y. Kang¹、C. Hobbs¹、P.D. Kirsch¹、W. Maszara²、J.A. del Alamo³ (1.SEMATECH、2.GLOBALFOUNDRIES、3.MIT (USA))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-2] P₂S₅/(NH₄)₂S_x-Based Sulfur Mono-Layer Doping Technique to form Sub-10 nm Ultra-Shallow Junctions for Advanced III-V Logic Devices

S. Subramanian^1,2、E.Y.J. Kong¹、D.S. Li³、S. Wicaksono³、S.F. Yoon³、Y.C. Yeo^1,2 (1.National Univ. of Singapore、2.NUS Graduate School for Integrative Sci. and Eng.、3.Nanyang Technological Univ. (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-3] Effective AlN-passivation for Improving ALD-Al₂O₃/GaAs Interface in MOS Structures Using MOCVD

T. Aoki¹、N. Fukuhara¹、T. Osada¹、H. Sazawa¹、M. Hata¹、T. Inoue¹ (1.Sumitomo Chemical Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-4] Fabrication and Characterization of Micromachined Cantilever Loaded with a Resonant Tunneling Diode for Delta-Sigma Type Strain Sensor Applications

Y. Kakutani¹、D. Wu¹、J. Pan¹、J. Nakano¹、M. Mori¹、K. Maezawa¹ (1.Univ. Toyama (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-1] Ge Active Photonic Devices on Si for Optical Interconnects

Y. Ishikawa¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-2] High Performance Silicon Waveguide-Integrated PIN and Schottky Ge Photodiodes and their Link with Inverter-Type CMOS TIA Circuits

J. Fujikata^1,2、M. Noguchi^1,2、M. Miura^1,2、D. Okamoto^1,2、T. Horikawa^1,3、Y. Arakawa^1,4 (1.PECST、2.PETRA、3.AIST、4.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-3] High Speed Waveguide Integrated Lateral P-I-N Ge on Si Photodiode with very Low Dark Current

L. Virot^1,2,3、L. Vivien¹、J.M. Hartmann²、Y. Bogumilowicz²、J.M. Fedeli²、D. Marris Morini¹、E. Cassan¹、C. Baudot³、F. Boeuf³ (1.Institut d'Electronique Fondamentale、2.CEA-Leti、3.STMicroelectronics (France))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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